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ZVN4106FTA-VB Product details
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Product Introduction
**ZVN4106FTA-VB** is a single N-channel MOSFET in a SOT23-3 package with a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 0.3A. The threshold voltage (Vth) of this model is 1.7V, which is suitable for use in low-voltage and low-to-medium-power switching applications. The on-resistance (RDS(ON)) of the MOSFET is 3100mΩ (at VGS=4.5V) and 2800mΩ (at VGS=10V), which is suitable for switching control in low-power devices. The ZVN4106FTA-VB uses Trench technology to provide high switching speeds and low power losses. Its compact SOT23-3 package is ideal for space-constrained applications, especially for low-power drive circuits, battery-powered devices and other small electronic systems.
**ZVN4106FTA-VB** is a single N-channel MOSFET in a SOT23-3 package with a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 0.3A. The threshold voltage (Vth) of this model is 1.7V, which is suitable for use in low-voltage and low-to-medium-power switching applications. The on-resistance (RDS(ON)) of the MOSFET is 3100mΩ (at VGS=4.5V) and 2800mΩ (at VGS=10V), which is suitable for switching control in low-power devices. The ZVN4106FTA-VB uses Trench technology to provide high switching speeds and low power losses. Its compact SOT23-3 package is ideal for space-constrained applications, especially for low-power drive circuits, battery-powered devices and other small electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Model**: ZVN4106FTA-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
- **Operating temperature range**: -55°C ~ 150°C
- **Model**: ZVN4106FTA-VB
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Drain current (ID)**: 0.3A
- **Technology**: Trench
- **Operating temperature range**: -55°C ~ 150°C
Domain and module applications：
Applicable fields and modules
**ZVN4106FTA-VB** is mainly suitable for the following fields and modules:
1. **Low-power switch applications**
Due to its low drain-source voltage and on-resistance, the ZVN4106FTA-VB performs well in low-power switch applications. It is widely used in applications such as switching power supplies, battery-driven circuits, and low-power control circuits.
2. **Miniaturized electronic devices**
The SOT23-3 package of this MOSFET is very compact and suitable for space-constrained applications such as small battery-powered portable devices, sensor modules, and smart home control systems.
3. **Signal switches and control circuits**
ZVN4106FTA-VB can be used as a signal switch and as a switching element in the signal path in electronic control circuits and communication equipment. It is suitable for applications that require low leakage current and high switching speed.
4. **Consumer Electronics and Portable Devices**
This MOSFET is suitable for power management and load switching in portable devices such as mobile power supplies, wearable devices, and handheld tools.
5. **Low Current Drive Circuits**
In circuits with lower drive currents, such as driving LEDs, relays, or small load currents, the ZVN4106FTA-VB can work effectively and provide stable performance.
With its low Vth and high efficiency, the ZVN4106FTA-VB provides designers with a reliable solution in low current switching circuits in multiple fields.
**ZVN4106FTA-VB** is mainly suitable for the following fields and modules:
1. **Low-power switch applications**
Due to its low drain-source voltage and on-resistance, the ZVN4106FTA-VB performs well in low-power switch applications. It is widely used in applications such as switching power supplies, battery-driven circuits, and low-power control circuits.
2. **Miniaturized electronic devices**
The SOT23-3 package of this MOSFET is very compact and suitable for space-constrained applications such as small battery-powered portable devices, sensor modules, and smart home control systems.
3. **Signal switches and control circuits**
ZVN4106FTA-VB can be used as a signal switch and as a switching element in the signal path in electronic control circuits and communication equipment. It is suitable for applications that require low leakage current and high switching speed.
4. **Consumer Electronics and Portable Devices**
This MOSFET is suitable for power management and load switching in portable devices such as mobile power supplies, wearable devices, and handheld tools.
5. **Low Current Drive Circuits**
In circuits with lower drive currents, such as driving LEDs, relays, or small load currents, the ZVN4106FTA-VB can work effectively and provide stable performance.
With its low Vth and high efficiency, the ZVN4106FTA-VB provides designers with a reliable solution in low current switching circuits in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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