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ZVN3306A-VB Product details
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Product Introduction
**ZVN3306A-VB** is a **single N-channel MOSFET** in **TO92 package**, designed for low power and medium current applications. Its **VDS** (drain-source voltage) is **60V**, which can adapt to a variety of low-voltage control and switching applications. The **gate-source threshold voltage (Vth)** of this MOSFET is **0.8V**, which can be turned on at a lower control voltage, providing higher switching efficiency. **ZVN3306A-VB** has an on-resistance (RDS(ON)) of **2400mΩ** (at **VGS=4.5V**) and **2000mΩ** (at **VGS=10V**), which is suitable for low-power switching control. Its **maximum drain current (ID)** is **0.45A**, making this MOSFET suitable for electronic applications with lower current and capable of providing stable current regulation. This type of MOSFET adopts **Trench technology**, which has lower switching loss and better conductivity, and is suitable for a wide range of low voltage applications.
**ZVN3306A-VB** is a **single N-channel MOSFET** in **TO92 package**, designed for low power and medium current applications. Its **VDS** (drain-source voltage) is **60V**, which can adapt to a variety of low-voltage control and switching applications. The **gate-source threshold voltage (Vth)** of this MOSFET is **0.8V**, which can be turned on at a lower control voltage, providing higher switching efficiency. **ZVN3306A-VB** has an on-resistance (RDS(ON)) of **2400mΩ** (at **VGS=4.5V**) and **2000mΩ** (at **VGS=10V**), which is suitable for low-power switching control. Its **maximum drain current (ID)** is **0.45A**, making this MOSFET suitable for electronic applications with lower current and capable of providing stable current regulation. This type of MOSFET adopts **Trench technology**, which has lower switching loss and better conductivity, and is suitable for a wide range of low voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 0.8V | 0.45A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 0.8V | 0.45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 60V | 0.8V | 0.45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
Detailed parameter description
- **Package**: TO92
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS = 4.5V
- 2000mΩ @ VGS = 10V
- **Drain current (ID)**: 0.45A
- **Maximum power dissipation (Pd)**: Max. 0.6W
- **Maximum peak leakage current**: 0.45A
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Maximum current density**: <0.75A/mm²
- **Input capacitance**: 27pF @ VDS=10V, VGS=0V
- **Package**: TO92
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 0.8V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS = 4.5V
- 2000mΩ @ VGS = 10V
- **Drain current (ID)**: 0.45A
- **Maximum power dissipation (Pd)**: Max. 0.6W
- **Maximum peak leakage current**: 0.45A
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Maximum current density**: <0.75A/mm²
- **Input capacitance**: 27pF @ VDS=10V, VGS=0V
Domain and module applications：
Applications and modules
1. **Low-power switching circuits**
**ZVN3306A-VB**'s low **Vth** and low **RDS(ON)** make it very suitable for **low-power switching circuits**. This MOSFET can be turned on at a lower gate voltage and is suitable for use as a switching element in **battery-powered devices and portable devices**. For example, in **low-power sensors and wireless modules**, this MOSFET can be used to achieve efficient switching control, reduce power consumption and extend the battery life of the device.
2. **Low-voltage power supply control**
**ZVN3306A-VB** is an ideal choice in **low-voltage power supply modules** that require precise control. It is suitable for **power supply circuits below 5V, low-voltage regulators, linear power regulators** and other applications. Its **low on-resistance** can effectively reduce power loss during power conversion and improve the energy efficiency of the power supply system.
3. **Switch Mode Power Supply (SMPS)**
Due to the good switching performance of **ZVN3306A-VB**, it can be widely used in **Switch Mode Power Supply (SMPS)**. In **DC-DC converters, buck converters, boost converters** and other modules, this MOSFET can be used as a switching device to provide stable current regulation and help improve conversion efficiency.
4. **Micro Current Control Circuit**
Since the maximum leakage current of this MOSFET is **0.45A**, it is suitable for **micro current control circuits**, such as **current source modules, electronic loads, low current transmission systems**, etc. In these applications, ZVN3306A-VB can provide precise current switching control to maintain system stability and efficiency.
5. **Battery Management System (BMS)**
In **Battery Management System (BMS)**, **ZVN3306A-VB** can be used for battery protection and current regulation, especially in **low-voltage battery** systems, such as **NiMH batteries and lithium-ion batteries**. The low on-resistance characteristics of MOSFET can ensure efficient control of the battery during the charging and discharging process and extend the battery life.
6. **Home Automation and Small Appliances**
Suitable for **home automation systems and small home appliances** Low-power switching circuits, **ZVN3306A-VB** can be used as a switch control element in smart homes due to its high efficiency and moderate leakage current to control the switch status of home appliances, lighting adjustment and other equipment to ensure efficient operation of the system.
**ZVN3306A-VB** is a single N-channel MOSFET designed for low-power applications, suitable for battery-driven systems, low-voltage power modules, switch-mode power supplies, micro current control, and battery management systems. It can effectively provide current regulation and switch control, and has the characteristics of low power consumption and high efficiency, suitable for various electronic products and systems with low current requirements.
1. **Low-power switching circuits**
**ZVN3306A-VB**'s low **Vth** and low **RDS(ON)** make it very suitable for **low-power switching circuits**. This MOSFET can be turned on at a lower gate voltage and is suitable for use as a switching element in **battery-powered devices and portable devices**. For example, in **low-power sensors and wireless modules**, this MOSFET can be used to achieve efficient switching control, reduce power consumption and extend the battery life of the device.
2. **Low-voltage power supply control**
**ZVN3306A-VB** is an ideal choice in **low-voltage power supply modules** that require precise control. It is suitable for **power supply circuits below 5V, low-voltage regulators, linear power regulators** and other applications. Its **low on-resistance** can effectively reduce power loss during power conversion and improve the energy efficiency of the power supply system.
3. **Switch Mode Power Supply (SMPS)**
Due to the good switching performance of **ZVN3306A-VB**, it can be widely used in **Switch Mode Power Supply (SMPS)**. In **DC-DC converters, buck converters, boost converters** and other modules, this MOSFET can be used as a switching device to provide stable current regulation and help improve conversion efficiency.
4. **Micro Current Control Circuit**
Since the maximum leakage current of this MOSFET is **0.45A**, it is suitable for **micro current control circuits**, such as **current source modules, electronic loads, low current transmission systems**, etc. In these applications, ZVN3306A-VB can provide precise current switching control to maintain system stability and efficiency.
5. **Battery Management System (BMS)**
In **Battery Management System (BMS)**, **ZVN3306A-VB** can be used for battery protection and current regulation, especially in **low-voltage battery** systems, such as **NiMH batteries and lithium-ion batteries**. The low on-resistance characteristics of MOSFET can ensure efficient control of the battery during the charging and discharging process and extend the battery life.
6. **Home Automation and Small Appliances**
Suitable for **home automation systems and small home appliances** Low-power switching circuits, **ZVN3306A-VB** can be used as a switch control element in smart homes due to its high efficiency and moderate leakage current to control the switch status of home appliances, lighting adjustment and other equipment to ensure efficient operation of the system.
**ZVN3306A-VB** is a single N-channel MOSFET designed for low-power applications, suitable for battery-driven systems, low-voltage power modules, switch-mode power supplies, micro current control, and battery management systems. It can effectively provide current regulation and switch control, and has the characteristics of low power consumption and high efficiency, suitable for various electronic products and systems with low current requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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