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ZVN2106GTA-VB Product details
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1. Product Introduction (ZVN2106GTA-VB)
ZVN2106GTA-VB is a unipolar N-channel MOSFET in SOT223 package, designed for low voltage, medium current applications. Its maximum drain-source voltage (VDS) is 60V, the maximum gate-source voltage (VGS) is ±20V, and it has a low on-resistance (RDS(ON)) of 85mΩ (VGS = 4.5V) and 76mΩ (VGS = 10V). The maximum drain current of this MOSFET is 4.5A, which is suitable for low power consumption, high efficiency switching applications, especially in power management, motor drive, low power load control and other fields. Using Trench technology, ZVN2106GTA-VB provides low conduction loss, fast response and high efficiency, suitable for various low voltage power and load switching systems.
ZVN2106GTA-VB is a unipolar N-channel MOSFET in SOT223 package, designed for low voltage, medium current applications. Its maximum drain-source voltage (VDS) is 60V, the maximum gate-source voltage (VGS) is ±20V, and it has a low on-resistance (RDS(ON)) of 85mΩ (VGS = 4.5V) and 76mΩ (VGS = 10V). The maximum drain current of this MOSFET is 4.5A, which is suitable for low power consumption, high efficiency switching applications, especially in power management, motor drive, low power load control and other fields. Using Trench technology, ZVN2106GTA-VB provides low conduction loss, fast response and high efficiency, suitable for various low voltage power and load switching systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
2. Detailed parameter description
| **Parameter** | **Description** |
|-------------------------|-------------------------------------------------------------------------|
| **Model** | ZVN2106GTA-VB |
| **Package** | SOT223 |
| **Configuration** | Unipolar N-channel|
| **Maximum drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 85mΩ (VGS = 4.5V); 76mΩ (VGS = 10V) |
| **Maximum drain current (ID)** | 4.5A |
| **Technology type** | Trench technology|
- **VDS**: The maximum drain-source voltage is 60V, which is suitable for medium and low voltage application scenarios, such as low-power power supplies, switching circuits, etc.
- **VGS**: The maximum gate-source voltage is ±20V, which is suitable for standard drive voltage, ensuring stable operation of the MOSFET within the normal operating range.
- **Vth**: The threshold voltage is 1.7V, providing reliable switching operation and suitable for starting work at a lower gate voltage.
- **RDS(ON)**: The on-resistance is 85mΩ (VGS = 4.5V) and 76mΩ (VGS = 10V), which makes this MOSFET perform well in low-power and high-efficiency applications, reducing energy loss during current flow.
- **ID**: The maximum drain current is 4.5A, which is suitable for medium current power control and load switching.
| **Parameter** | **Description** |
|-------------------------|-------------------------------------------------------------------------|
| **Model** | ZVN2106GTA-VB |
| **Package** | SOT223 |
| **Configuration** | Unipolar N-channel|
| **Maximum drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 85mΩ (VGS = 4.5V); 76mΩ (VGS = 10V) |
| **Maximum drain current (ID)** | 4.5A |
| **Technology type** | Trench technology|
- **VDS**: The maximum drain-source voltage is 60V, which is suitable for medium and low voltage application scenarios, such as low-power power supplies, switching circuits, etc.
- **VGS**: The maximum gate-source voltage is ±20V, which is suitable for standard drive voltage, ensuring stable operation of the MOSFET within the normal operating range.
- **Vth**: The threshold voltage is 1.7V, providing reliable switching operation and suitable for starting work at a lower gate voltage.
- **RDS(ON)**: The on-resistance is 85mΩ (VGS = 4.5V) and 76mΩ (VGS = 10V), which makes this MOSFET perform well in low-power and high-efficiency applications, reducing energy loss during current flow.
- **ID**: The maximum drain current is 4.5A, which is suitable for medium current power control and load switching.
Domain and module applications：
3. Applicable fields and modules
As a low-power, high-efficiency MOSFET, ZVN2106GTA-VB is widely used in the following fields and modules:
- **Power management system**: This MOSFET is particularly suitable for low-power power management systems such as DC-DC converters, AC-DC power adapters, and power regulators. Its low on-resistance and high-efficiency switching characteristics make it an ideal choice for optimizing power conversion and voltage regulation performance.
- **Battery-powered devices**: In battery-powered devices that require low voltage and high efficiency (such as portable electronics, wireless devices, etc.), ZVN2106GTA-VB can be used for load switching, power management, and battery protection circuits.
- **Low-power electric motor drive**: This MOSFET can be used in the drive and control of small electric motors (such as fans, power tools, small appliances, etc.). Its low on-resistance and high current carrying capacity are suitable for the low-power control needs of electric motors.
- **Signal amplifier and switching circuit**: In signal amplifier and switching circuit, ZVN2106GTA-VB can provide stable switching performance, and is widely used in audio amplifiers, communication equipment, etc., to ensure efficient signal transmission and low distortion.
- **TV and audio system**: ZVN2106GTA-VB is also widely used in power regulation and load switching parts in TV, audio and household appliances, which can effectively improve system efficiency and reduce power consumption.
- **Automotive electronics**: This MOSFET is also suitable for automotive electronic systems, especially in the low-voltage power supply system, lighting control and sensor circuits of automobiles to provide high-efficiency power switching and management functions.
- **Industrial control system**: ZVN2106GTA-VB can be used as power switch, load switch and other components in industrial automation equipment and control systems to provide reliable and efficient current control, especially in applications requiring medium power control.
As a low-power, high-efficiency MOSFET, ZVN2106GTA-VB is widely used in the following fields and modules:
- **Power management system**: This MOSFET is particularly suitable for low-power power management systems such as DC-DC converters, AC-DC power adapters, and power regulators. Its low on-resistance and high-efficiency switching characteristics make it an ideal choice for optimizing power conversion and voltage regulation performance.
- **Battery-powered devices**: In battery-powered devices that require low voltage and high efficiency (such as portable electronics, wireless devices, etc.), ZVN2106GTA-VB can be used for load switching, power management, and battery protection circuits.
- **Low-power electric motor drive**: This MOSFET can be used in the drive and control of small electric motors (such as fans, power tools, small appliances, etc.). Its low on-resistance and high current carrying capacity are suitable for the low-power control needs of electric motors.
- **Signal amplifier and switching circuit**: In signal amplifier and switching circuit, ZVN2106GTA-VB can provide stable switching performance, and is widely used in audio amplifiers, communication equipment, etc., to ensure efficient signal transmission and low distortion.
- **TV and audio system**: ZVN2106GTA-VB is also widely used in power regulation and load switching parts in TV, audio and household appliances, which can effectively improve system efficiency and reduce power consumption.
- **Automotive electronics**: This MOSFET is also suitable for automotive electronic systems, especially in the low-voltage power supply system, lighting control and sensor circuits of automobiles to provide high-efficiency power switching and management functions.
- **Industrial control system**: ZVN2106GTA-VB can be used as power switch, load switch and other components in industrial automation equipment and control systems to provide reliable and efficient current control, especially in applications requiring medium power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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