Y30NK90Z-VB Product details
Product introduction:
**Y30NK90Z-VB** is a single N-channel MOSFET in a **TO247** package, designed for high voltage, high power power supply applications. This MOSFET has a maximum drain-source voltage (V_DS) of 900V and a maximum drain current (I_D) of 47A, enabling it to withstand higher voltages and high currents, making it suitable for use in high voltage power supplies, switching power supplies, motor control, and industrial power management. **SJ_Multi-EPI** technology provides it with a lower on-resistance (R_DS(ON) = 100mΩ @ V_GS = 10V), ensuring lower power loss and higher operating efficiency. The device performs well in high voltage and high current applications, providing excellent switching performance and current carrying capacity, and is widely used in high power power management and high frequency switching circuits.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 47A | 100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (V_DS)**: 900V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 100mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 47A
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: -55°C to +150°C (specific values are subject to the data sheet)
- **Features and benefits**:
- High drain-source voltage (900V), suitable for high voltage applications
- Low on-resistance (100mΩ) ensures high efficiency and reduces power loss
- High current carrying capacity (47A) for high power applications
- Excellent switching performance for high frequency switching circuits
- High reliability ensures long-term stable operation
- Suitable for high temperature environments, operating temperature up to 150°C
- **SJ_Multi-EPI** technology provides low power loss and good thermal management
Domain and module applications:
1. **High-voltage power converter**
- **Y30NK90Z-VB** is widely used in high-voltage power converters, especially in situations where high-voltage AC (such as 220V or 380V) needs to be converted to low-voltage DC. For example, in power systems, industrial power modules, and power conversion for communication equipment, the high voltage carrying capacity and low on-resistance of MOSFET ensures improved energy efficiency and reduced power loss.
2. **Switching Mode Power Supply (SMPS)**
- In the Switching Mode Power Supply (SMPS), **Y30NK90Z-VB**'s high voltage tolerance and low R_DS(ON) characteristics are very suitable for high-efficiency power management. This MOSFET enables the switching power supply to operate in a high-frequency and high-voltage environment with minimal power loss, and is commonly used in computer power supplies, industrial equipment power supplies, LED lighting power supplies, and other fields.
3. **Motor drive system**
- In motor control and drive systems, especially in motor drive modules that require high voltage and high current control, **Y30NK90Z-VB** provides excellent current carrying capacity and low loss characteristics, and is suitable for industrial motor drives, motor drive circuits in automation equipment, as well as power tools, electric vehicles and other fields.
4. **Uninterruptible power supply (UPS)**
- **Y30NK90Z-VB** is also widely used in uninterruptible power supply (UPS) systems, especially in UPS devices with high voltage input and output. Due to its high withstand voltage (900V) and low on-resistance, it can improve the efficiency of UPS systems, reduce energy loss, and support long-term stable operation, and is especially suitable for data centers, large servers and industrial power backup systems.
5. **Battery Management System (BMS)**
- In the battery management system (BMS), **Y30NK90Z-VB** is used for the management and control of high-voltage battery packs to ensure efficient and stable battery charging and discharging processes. Its high voltage carrying capacity enables it to provide efficient current switching and regulation in electric vehicles (EVs) and power storage systems, ensuring battery safety and long life.
6. **High-frequency switching circuits**
- Due to its excellent switching performance and low on-resistance, **Y30NK90Z-VB** is also widely used in high-frequency switching circuits, especially in high-frequency and high-voltage application scenarios, such as high-power radio frequency (RF) applications, power amplifiers for radio communication equipment, and energy scheduling for power electronic equipment.
7. **Power Electronic Control**
- In the field of power electronics, **Y30NK90Z-VB** can be used in high-voltage control systems, such as power conversion, inverters, rectifiers and other high-power control modules. Due to its high voltage and high current carrying capacity, this MOSFET is suitable for various power electronic modules, such as wind power generation, solar cell conversion systems and other renewable energy projects.
8. **Smart Grid System**
- In the smart grid system, **Y30NK90Z-VB**'s high voltage and high current characteristics make it a key control element in power distribution, load balancing and power dispatching systems, optimizing the energy efficiency and stability of the power grid, especially in the application scenarios of high-voltage power transmission and distribution.
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