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WSK96N08-VB Product details

Product introduction:

1. Product Introduction (WSK96N08-VB)

WSK96N08-VB is a high-performance unipolar N-channel MOSFET in TO263 package, designed for high-efficiency power switching applications. The maximum drain-source voltage (VDS) of this MOSFET is 80V, and the gate-source voltage (VGS) can reach ±20V. It has extremely low on-resistance (RDS(ON)) and high current carrying capacity (ID = 120A). When VGS=10V, RDS(ON) is 6mΩ, and when VGS=4.5V, RDS(ON) is 10mΩ, which can effectively reduce power loss and heat generation, and is suitable for high-efficiency power conversion, load switching and drive circuits. Its operating threshold voltage (Vth) is 3V, ensuring that it can start at a lower gate voltage. WSK96N08-VB uses Trench technology, which can provide excellent switching performance and higher operating efficiency, and is very suitable for high-power, low-voltage switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 80V 3V 120A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. Detailed parameter description

| **Parameter** | **Description** |
|-------------------------|--------------------------------------------------------------------------|
| **Model** | WSK96N08-VB |
| **Package** | TO263 |
| **Configuration** | Unipolar N-channel|
| **Maximum drain-source voltage (VDS)** | 80V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 10mΩ (VGS=4.5V); 6mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 120A |
| **Technology type** | Trench technology|

- **VDS**: The maximum drain-source voltage is 80V, which is suitable for medium voltage applications. It can work stably in systems below 80V and is often used in low-voltage power management and drive circuits.
- **VGS**: The maximum gate-source voltage is ±20V, which is widely compatible with a variety of control circuits and suitable for working with various drive signals.
- **Vth**: The threshold voltage is 3V, which ensures that the MOSFET can be turned on at a lower gate voltage, reducing drive power consumption and improving response speed.
- **RDS(ON)**: When VGS=10V, the on-resistance of the N channel is 6mΩ; when VGS=4.5V, the on-resistance is 10mΩ. The extremely low on-resistance makes this MOSFET have very low power loss and heat generation.
- **ID**: The maximum drain current is 120A, which can carry high current loads and is very suitable for high-power drive and power conversion applications.

Domain and module applications:

3. Application fields and modules

WSK96N08-VB is widely used in various high-power electronic systems due to its low on-resistance, high current carrying capacity and efficient switching performance. The following are typical application scenarios of this product:

- **DC-DC converter**: WSK96N08-VB is suitable for various DC-DC converters, such as buck converters, boost converters and isolated DC-DC converters. In these applications, low on-resistance and high current handling capability can effectively reduce the power loss and heat generation of the system and improve the conversion efficiency, especially when high efficiency is required in the power supply system.

- **Electric vehicle drive system**: In electric vehicle drive systems, WSK96N08-VB is widely used in motor drive circuits, inverters and battery management systems. Its high current carrying capacity and low on-resistance can effectively support the high current demand in the motor drive process, reduce energy loss and improve the overall efficiency of the system.

- **Battery Management System (BMS)**: The WSK96N08-VB is particularly important in battery management systems, especially in the process of charging and discharging the battery, and can stably handle high current loads. Its low RDS(ON) can minimize power loss in the battery management system and ensure that the battery works under efficient and safe conditions.

- **High-efficiency Power Management System**: The low RDS(ON) characteristics and high current carrying capacity of the WSK96N08-VB make it an ideal choice in high-efficiency power management systems such as UPS (Uninterruptible Power Supply), inverters and power adapters. It is particularly suitable for systems that require high efficiency, low power consumption and high reliability, and can provide stable performance under frequent switching and load changes.

- **Power Tools**: The WSK96N08-VB can be used as a drive switch in power tools to control the current flow of the motor and ensure efficient startup and operation of the power tool. Its low on-resistance characteristics can reduce power loss and extend battery life, making it very valuable in power tools.

- **Power amplifier and audio amplifier**: In high-power amplifier or audio amplifier circuits, the low on-resistance and high current handling capability of WSK96N08-VB enable it to effectively drive high-power loads while reducing distortion and energy loss, improving audio quality and system stability.

- **Load switch and protection circuit**: This MOSFET is also very suitable for load switching circuits, especially in power management and protection circuits. It can effectively cut off the power supply, prevent overload or short circuit, and protect the system from damage.

Overall, due to its low on-resistance, excellent switching performance and high current carrying capacity, WSK96N08-VB is very suitable for applications such as efficient power conversion, electric drive systems, battery management and high-power switching, and can meet the stringent requirements of modern electronic systems for high efficiency, low power consumption and high current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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