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WSF70N10-VB Product details

Product introduction:

WSF70N10-VB MOSFET Product Introduction

**WSF70N10-VB** is a high-performance **single N-channel MOSFET**, using **TO252** package, with **100V** drain-source voltage (VDS) and **85A** high drain current (ID), suitable for medium-voltage and high-current applications. Its **Vth** (threshold voltage) is **2.5V**, and it has an extremely low **on-resistance (RDS(ON))**, which is **10.5mΩ** (at VGS = 4.5V) and **8.5mΩ** (at VGS = 10V). Manufactured with **Trench** technology, this MOSFET has low power loss, higher switching frequency and lower heat generation, and is suitable for use in high-efficiency power management, motor drive and high-current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 100V 2.5V 85A 8.5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 100V 2.5V 85A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 100V 2.5V 85A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
WSF70N10-VB MOSFET Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **10.5mΩ** @VGS = 4.5V
- **8.5mΩ** @VGS = 10V
- **Drain current (ID)**: 85A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: Unspecified
- **Input gate capacitance (Ciss)**: Unspecified
- **Reverse leakage current (IR)**: Unspecified

Domain and module applications:

Applications and modules

1. **Power management system**
- **WSF70N10-VB** is particularly suitable for **power management system**, especially in **DC-DC converter**, **AC-DC power supply**, **battery charger** and **voltage regulator** applications due to its low **RDS(ON)** and high **leakage current carrying capacity**. It can provide efficient power conversion and improve system efficiency by reducing conduction loss, ensuring low temperature operation and high efficiency of the system.

2. **Motor drive**
- This MOSFET is suitable for **motor drive** applications, especially in **industrial automation**, **power tools**, **home appliance motor control** and **electric vehicles** motor control systems. Its low on-resistance and high current support capability enable stable operation at high current, reduce power loss and heat accumulation during motor operation, and ensure efficient current transmission.

3. **Automotive Electronics**
- **WSF70N10-VB** MOSFET is suitable for power management in **automotive electronics** systems, especially in **battery management systems (BMS)** and **on-board power modules**. It can effectively control the battery charging and discharging process, optimize the battery life, and achieve efficient power conversion in **electric vehicles (EV)** and **hybrid vehicles (HEV)**.

4. **Communication and RF Applications**
- In **communication equipment** and **RF applications**, WSF70N10-VB can also be applied to **RF power amplifiers** and **signal conditioning circuits**. Its low on-resistance and high current capability make it particularly suitable for RF systems that require high-speed switching and high efficiency, providing stable power management and signal conditioning.

5. **LED lighting driver**
- In **LED lighting driver systems**, WSF70N10-VB can provide efficient current control, ensuring that lamps operate at lower temperatures, extending the life of LEDs and improving energy efficiency. It is particularly suitable for applications such as commercial and industrial lighting, and automotive lighting.

6. **Consumer electronics**
- This MOSFET is also widely used in **consumer electronics**, such as **smartphone battery management modules**, **tablet power modules**, **laptop battery protection circuits** and **small home appliances**. Due to its low on-resistance and high current carrying capacity, it can effectively improve battery life and system performance and reduce energy loss.

Through its excellent low on-resistance, high current support capability and good thermal management characteristics, **WSF70N10-VB** MOSFET can provide stable current management solutions for various high-performance systems, especially in power management, motor drive, automotive electronics and RF applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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