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WSF3012-VB Product details
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1. Product Introduction (WSF3012-VB)
WSF3012-VB is a high-performance N+P channel common source configuration MOSFET in TO252-4L package, suitable for low voltage bipolar drive and switching applications. The maximum drain-source voltage (VDS) of this MOSFET is ±30V, and the supported gate-source voltage (VGS) is ±20V, which enables it to work stably in a variety of medium and low voltage systems. Its unique dual-channel design enables the product to provide excellent switching performance under both positive and negative voltage conditions, and is suitable for bipolar drive circuits, bridge circuits, etc. The on-resistance (RDS(ON)) of WSF3012-VB is 10mΩ (N channel) and 35mΩ (P channel) @VGS=4.5V, and 7mΩ and 25mΩ respectively at VGS=10V. It has very low power loss and heat generation, and the maximum drain current is 65A (N channel) and -35A (P channel), meeting the requirements of high-efficiency drive.
WSF3012-VB is a high-performance N+P channel common source configuration MOSFET in TO252-4L package, suitable for low voltage bipolar drive and switching applications. The maximum drain-source voltage (VDS) of this MOSFET is ±30V, and the supported gate-source voltage (VGS) is ±20V, which enables it to work stably in a variety of medium and low voltage systems. Its unique dual-channel design enables the product to provide excellent switching performance under both positive and negative voltage conditions, and is suitable for bipolar drive circuits, bridge circuits, etc. The on-resistance (RDS(ON)) of WSF3012-VB is 10mΩ (N channel) and 35mΩ (P channel) @VGS=4.5V, and 7mΩ and 25mΩ respectively at VGS=10V. It has very low power loss and heat generation, and the maximum drain current is 65A (N channel) and -35A (P channel), meeting the requirements of high-efficiency drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | 7/25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
2. Detailed parameter description
| **Parameter** | **Description** |
|-------------------------|---------------------------------------------------------------------------|
| **Model** | WSF3012-VB |
| **Package** | TO252-4L |
| **Configuration** | Common source-N+P channel|
| **Maximum drain-source voltage (VDS)** | ±30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.8V (N channel), -1.7V (P channel) |
| **On-resistance (RDS(ON))** | 10mΩ (N channel), 35mΩ (P channel)@VGS=4.5V; 7mΩ (N channel), 25mΩ (P channel)@VGS=10V |
| **Maximum drain current (ID)** | 65A (N-channel), -35A (P-channel) |
| **Technology Type** | Trench Technology|
- **VDS**: The maximum drain-source voltage is ±30V, which is suitable for medium voltage drive applications and can work stably under positive and negative voltage conditions.
- **VGS**: Supports a maximum gate-source voltage of ±20V, making it compatible with a variety of control circuits and suitable for driving a variety of loads.
- **Vth**: The threshold voltage of the N-channel is 1.8V, and the threshold voltage of the P-channel is -1.7V, ensuring that the MOSFET can be effectively turned on at a lower gate voltage, improving the switching efficiency of the system.
- **RDS(ON)**: The on-resistance of the N-channel and P-channel are 10mΩ and 35mΩ (VGS=4.5V), 7mΩ and 25mΩ (VGS=10V), respectively, ensuring very low power loss and heat generation when high current passes through.
- **ID**: N-channel maximum drain current is 65A, P-channel maximum drain current is -35A, suitable for applications with high load current.
| **Parameter** | **Description** |
|-------------------------|---------------------------------------------------------------------------|
| **Model** | WSF3012-VB |
| **Package** | TO252-4L |
| **Configuration** | Common source-N+P channel|
| **Maximum drain-source voltage (VDS)** | ±30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.8V (N channel), -1.7V (P channel) |
| **On-resistance (RDS(ON))** | 10mΩ (N channel), 35mΩ (P channel)@VGS=4.5V; 7mΩ (N channel), 25mΩ (P channel)@VGS=10V |
| **Maximum drain current (ID)** | 65A (N-channel), -35A (P-channel) |
| **Technology Type** | Trench Technology|
- **VDS**: The maximum drain-source voltage is ±30V, which is suitable for medium voltage drive applications and can work stably under positive and negative voltage conditions.
- **VGS**: Supports a maximum gate-source voltage of ±20V, making it compatible with a variety of control circuits and suitable for driving a variety of loads.
- **Vth**: The threshold voltage of the N-channel is 1.8V, and the threshold voltage of the P-channel is -1.7V, ensuring that the MOSFET can be effectively turned on at a lower gate voltage, improving the switching efficiency of the system.
- **RDS(ON)**: The on-resistance of the N-channel and P-channel are 10mΩ and 35mΩ (VGS=4.5V), 7mΩ and 25mΩ (VGS=10V), respectively, ensuring very low power loss and heat generation when high current passes through.
- **ID**: N-channel maximum drain current is 65A, P-channel maximum drain current is -35A, suitable for applications with high load current.
Domain and module applications：
3. Applicable fields and modules
The N+P channel common source configuration and excellent conduction performance of WSF3012-VB make it widely used in multiple fields that require positive and negative voltage drive, bipolar switching and high power control. The following are typical application scenarios of this product:
- **DC-DC converter**: Due to its low on-resistance and high current carrying capacity, WSF3012-VB is very suitable for use in DC-DC converters, especially when the input and output voltages are low. Its bipolar characteristics provide efficient current switching and low power loss during the conversion process, ensuring efficient operation of the converter.
- **Electric vehicle drive system**: In electric vehicle drive systems, especially motor drive circuits, WSF3012-VB can be used as a power switch to control the flow of current. It can withstand large current loads and has low RDS(ON) characteristics, reducing system heat and energy loss.
- **Battery Management System (BMS)**: The application of WSF3012-VB in battery management system, especially in the process of battery charging and discharging, can provide efficient switch control. It can stably handle the switching of positive and negative voltages, ensure efficient charging and discharging of the battery, and reduce the heat generation caused by power loss, thereby improving the stability and safety of the system.
- **Load Switch and Load Drive Circuit**: This MOSFET is very suitable for load switch circuits and has excellent performance in a variety of load drive applications. Whether in an efficient power switch or as a load control switch in a protection circuit, WSF3012-VB can provide reliable power switching.
- **H-bridge circuit and bridge inverter**: The N+P channel configuration of WSF3012-VB makes it very suitable for H-bridge circuit and bridge inverter applications, especially in scenarios requiring bipolar voltage and efficient switching. It can provide stable performance under frequent load changes and is widely used in small motor drives, solar inverters and UPS power supplies.
- **High-frequency switching power supply**: WSF3012-VB can support higher switching frequencies and is suitable for power systems such as high-frequency DC-DC converters to help improve power efficiency, especially in application scenarios with high requirements for heat loss.
Overall, due to its dual-channel configuration and low on-resistance, WSF3012-VB is suitable for a variety of high-efficiency switching power supplies, drive circuits and high-current load applications, and is an ideal choice for achieving high efficiency and low power consumption in power systems.
The N+P channel common source configuration and excellent conduction performance of WSF3012-VB make it widely used in multiple fields that require positive and negative voltage drive, bipolar switching and high power control. The following are typical application scenarios of this product:
- **DC-DC converter**: Due to its low on-resistance and high current carrying capacity, WSF3012-VB is very suitable for use in DC-DC converters, especially when the input and output voltages are low. Its bipolar characteristics provide efficient current switching and low power loss during the conversion process, ensuring efficient operation of the converter.
- **Electric vehicle drive system**: In electric vehicle drive systems, especially motor drive circuits, WSF3012-VB can be used as a power switch to control the flow of current. It can withstand large current loads and has low RDS(ON) characteristics, reducing system heat and energy loss.
- **Battery Management System (BMS)**: The application of WSF3012-VB in battery management system, especially in the process of battery charging and discharging, can provide efficient switch control. It can stably handle the switching of positive and negative voltages, ensure efficient charging and discharging of the battery, and reduce the heat generation caused by power loss, thereby improving the stability and safety of the system.
- **Load Switch and Load Drive Circuit**: This MOSFET is very suitable for load switch circuits and has excellent performance in a variety of load drive applications. Whether in an efficient power switch or as a load control switch in a protection circuit, WSF3012-VB can provide reliable power switching.
- **H-bridge circuit and bridge inverter**: The N+P channel configuration of WSF3012-VB makes it very suitable for H-bridge circuit and bridge inverter applications, especially in scenarios requiring bipolar voltage and efficient switching. It can provide stable performance under frequent load changes and is widely used in small motor drives, solar inverters and UPS power supplies.
- **High-frequency switching power supply**: WSF3012-VB can support higher switching frequencies and is suitable for power systems such as high-frequency DC-DC converters to help improve power efficiency, especially in application scenarios with high requirements for heat loss.
Overall, due to its dual-channel configuration and low on-resistance, WSF3012-VB is suitable for a variety of high-efficiency switching power supplies, drive circuits and high-current load applications, and is an ideal choice for achieving high efficiency and low power consumption in power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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