WSE3099-VB Product details
Product introduction:
WSE3099-VB is a high-efficiency P-channel MOSFET in a SOT89 package with a compact size and excellent current carrying capacity. The device uses Trench technology to provide low RDS(ON), ensuring low conduction losses and high-efficiency power control. The WSE3099-VB has a rated VDS of -30V and a maximum ID of -7.6A, making it suitable for low-voltage and high-efficiency power management and switching applications.
With its excellent electrical performance, the WSE3099-VB is particularly suitable for applications such as load switching, battery protection, and power conversion, and performs well in systems that require efficient conduction and low switching losses.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | 50mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-P | -30V | -1.7V | -7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-P |
- **Model**: WSE3099-VB
- **Package**: SOT89
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 56mΩ @ VGS = 4.5V
- 50mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -7.6A
- **Technology**: Trench
- **Package type**: SOT89
Domain and module applications:
1. **Load switch circuit**
WSE3099-VB is very suitable for use in load switch circuits due to its low on-resistance and high current carrying capacity. In power management and distribution, P-channel MOSFETs such as WSE3099-VB can effectively control the connection and disconnection of loads, especially suitable for battery-powered systems, portable devices or other low-power applications.
2. **Battery protection circuit**
In battery management systems, WSE3099-VB can be used as a switching device in battery protection circuits to ensure overcharge, over-discharge and short-circuit protection of batteries. Its low on-resistance helps reduce energy loss, improve system efficiency and extend battery life.
3. **DC-DC converter**
WSE3099-VB acts as a negative switch element in DC-DC converters to provide efficient power conversion. Especially in application scenarios with large load current changes, it can effectively reduce power loss and improve the overall efficiency of the converter, and is suitable for low-voltage and high-efficiency applications such as 5V to 12V power modules.
4. **Power Management and Switching Circuits**
Due to its high efficiency and good switching characteristics, WSE3099-VB is suitable for various power management systems and switching circuits. Especially in systems that require fast response and low loss, it can ensure stable power supply and efficient conversion, which is commonly found in smart home devices, embedded systems, and automation control modules.
5. **Automotive Electronics**
WSE3099-VB is also suitable for the automotive electronics field, especially in applications such as electric vehicles, charging systems, and on-board battery management systems. Its P-channel characteristics enable it to effectively control battery charging, power regulation, and other power systems, providing reliable current switching and high-efficiency control.
In summary, WSE3099-VB is a high-efficiency, low-loss P-channel MOSFET suitable for multiple fields such as load switching, battery protection, power conversion and automotive electronics. It performs well in applications requiring high efficiency, low conduction loss and stable performance.
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