WSE3098-VB Product details
Product introduction:
**WSE3098-VB** is an N-channel MOSFET based on Trench technology, packaged in SOT89. This MOSFET has low on-resistance (RDS(ON)) and high current carrying capacity, making it ideal for low-voltage and medium-power switching circuits. Its maximum drain-source voltage (VDS) is 30V, maximum gate-source voltage (VGS) is ±20V, and turn-on voltage (Vth) is low (1.7V), making it ideal for low-voltage driven, high-efficiency power applications. This model performs well in common power management, battery-powered devices, and power switching circuits, has good thermal management performance, and is suitable for high-current applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 30V | 1.7V | 6.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
- **Package type**: SOT89
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 30mΩ @ VGS = 2.5V
- 22mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6.8A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Application areas**: power management, battery power supply, power tools, low-voltage drive modules, etc.
Domain and module applications:
3. **Low-voltage load switch**:
The low Vth (1.7V) and low RDS(ON) characteristics of WSE3098-VB enable it to perform well in low-voltage load switch applications. For example, in various load switch circuits driven by low voltages (such as 5V, 12V systems), WSE3098-VB can be used as an efficient switching element to control the switching operation of the load and reduce power loss during the switching process. This makes it very suitable for power switch control of computer peripherals, routers, sensors and other low-voltage devices.
4. **LED drive circuit**:
WSE3098-VB is also very suitable for use in LED drive circuits. Its lower on-resistance and higher drain current capability enable it to provide stable current control in LED lighting applications. Especially in applications requiring higher efficiency and lower heat, WSE3098-VB as a switch element can effectively reduce power consumption and improve the performance and life of the LED drive system.
5. **Voltage Regulators and Stabilizers**:
In low-voltage DC-DC converters, the low on-resistance of the WSE3098-VB helps improve conversion efficiency, especially in situations where a stable output voltage is required. As a switching element, it can switch quickly while reducing switching losses, making it suitable for efficient power supply voltage regulation systems. For example, both buck converters and boost converters in 5V or 12V systems can use this MOSFET to achieve more efficient voltage regulation.
6. **Audio Power Amplifier**:
Due to its low RDS(ON) and high current carrying capacity, the WSE3098-VB is also suitable for audio power amplifier circuits, especially as a switching element in high-performance audio equipment. It can operate under high load conditions and effectively control power transmission to ensure clear audio signals and stable power output.
In summary, the WSE3098-VB has a wide range of application potentials, especially in the fields of power management, battery power supply, voltage regulation and switching power supply. Its low RDS(ON), high current carrying capability and Trench technology make it an ideal choice for many high-efficiency circuit designs.
Technical support:
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