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WSD3060DN-VB Product details

Product introduction:

Product Introduction

WSD3060DN-VB is an N-channel MOSFET with high-efficiency performance. It adopts DFN8 (3x3) package, has compact size and excellent current carrying capacity. This device is particularly suitable for low-voltage, high-efficiency applications. It has excellent on-resistance and low switching losses, and is suitable for various fields with high power efficiency requirements.

WSD3060DN-VB uses Trench technology to provide low RDS (ON) (i.e. on-resistance), ensuring good current carrying capacity at low VGS (gate voltage). This MOSFET has a rated VDS of 30V and a maximum ID of 40A. It can operate at a gate voltage of 20V and is suitable for high-frequency applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 40A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Detailed parameter description

- **Model**: WSD3060DN-VB
- **Package**: DFN8(3x3)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Package size**: 3x3 mm (DFN8)

Domain and module applications:

Application fields and module examples

1. **Battery Management System (BMS)**
With its low on-resistance and high current carrying capacity, the WSD3060DN-VB is particularly suitable for battery management systems. Especially during the charging and discharging process, this MOSFET can be used as an efficient switching device to optimize energy conversion and reduce heat generation, thereby improving the efficiency and reliability of the system.

2. **DC-DC Converter**
Due to its low RDS(ON) characteristics, this MOSFET is very suitable for high-efficiency DC-DC converter modules, especially in high-frequency switching applications that require low conduction losses. In such applications, the WSD3060DN-VB can effectively reduce conduction losses and improve conversion efficiency, and is suitable for power modules with voltage levels such as 5V and 12V.

3. **Power Tools**
In power tools, the high current capability and low on-resistance of the WSD3060DN-VB make it an ideal choice for driving motors and other high-power components. It provides robust performance, ensuring efficient operation of power tools while reducing battery consumption and heat generation.

4. **Automotive electronics**
WSD3060DN-VB can be widely used in automotive electronic systems, such as power management, load switching, and various drive circuits for electric vehicles. Its efficient switching characteristics and high-frequency resistance make it suitable for automotive environments that require high reliability and long-term stability.

5. **Solar inverter**
In solar inverters, WSD3060DN-VB can be used as a power switching device to efficiently convert DC to AC. Its low on-resistance can reduce energy loss and improve the overall efficiency of the inverter, which is particularly suitable for high-efficiency photovoltaic applications.

Through the examples of the above application areas, WSD3060DN-VB is suitable for various high-performance modules that require low on-resistance and high current carrying capacity due to its efficient electrical characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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