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WSC60N03-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction:**
WSC60N03-VB is a high-performance single N-Channel MOSFET in TO251 package, designed for high-efficiency power management and high-power applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the maximum gate-source voltage (VGS) is 20V, the maximum drain current (ID) is 100A, and it can provide extremely low on-resistance (RDS(ON)), which are 4.5mΩ@VGS=4.5V and 3.5mΩ@VGS=10V respectively. This enables the MOSFET to achieve high-efficiency current conduction in high-frequency switching, power conversion and load control circuits, reduce power loss, and improve the overall energy efficiency and response speed of the system.
Using Trench technology, this MOSFET performs well in high current and low voltage applications, can adapt to high power density working environments, and is suitable for most applications requiring fast switching and low on-resistance, such as power management modules, DC-DC converters, battery-powered devices, etc.
WSC60N03-VB is a high-performance single N-Channel MOSFET in TO251 package, designed for high-efficiency power management and high-power applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the maximum gate-source voltage (VGS) is 20V, the maximum drain current (ID) is 100A, and it can provide extremely low on-resistance (RDS(ON)), which are 4.5mΩ@VGS=4.5V and 3.5mΩ@VGS=10V respectively. This enables the MOSFET to achieve high-efficiency current conduction in high-frequency switching, power conversion and load control circuits, reduce power loss, and improve the overall energy efficiency and response speed of the system.
Using Trench technology, this MOSFET performs well in high current and low voltage applications, can adapt to high power density working environments, and is suitable for most applications requiring fast switching and low on-resistance, such as power management modules, DC-DC converters, battery-powered devices, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | 3.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 30V | 1.7V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. **Detailed parameter description:**
- **Package type:** TO251
- **Configuration:** Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS):** 30V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 4.5mΩ @ VGS = 4.5V
- 3.5mΩ @ VGS = 10V
- **Maximum drain current (ID):** 100A
- **Technology:** Trench
- **Maximum power loss (P_max):** Provides low power consumption and high efficiency in high power applications
- **Operating temperature range:** -55°C to +150°C (adaptable to high temperature environment)
- **Charge storage (Qg):** Provides fast switching response, suitable for high frequency operation
- **Operating frequency:** Up to several hundred kHz, suitable for high speed switching applications
- **Package size:** TO251 package is suitable for medium size boards and high power applications
- **Package type:** TO251
- **Configuration:** Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS):** 30V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 4.5mΩ @ VGS = 4.5V
- 3.5mΩ @ VGS = 10V
- **Maximum drain current (ID):** 100A
- **Technology:** Trench
- **Maximum power loss (P_max):** Provides low power consumption and high efficiency in high power applications
- **Operating temperature range:** -55°C to +150°C (adaptable to high temperature environment)
- **Charge storage (Qg):** Provides fast switching response, suitable for high frequency operation
- **Operating frequency:** Up to several hundred kHz, suitable for high speed switching applications
- **Package size:** TO251 package is suitable for medium size boards and high power applications
Domain and module applications：
3. **Application fields and module examples:**
# 1. **Power management system:**
The low RDS(ON) characteristics of WSC60N03-VB make it very suitable for power management systems, especially DC-DC converters, power factor correction (PFC) circuits and inverters. It can significantly reduce power loss and improve conversion efficiency. Application scenarios include consumer electronics, communication equipment, power tools and battery management systems.
# 6. **Automotive electronics and industrial control:**
In automotive electronics and industrial control systems, WSC60N03-VB can be used as a key component in load switches and power conversion modules. For example, it can be used in power management modules, motor drive circuits and various control power modules of electric vehicles to improve system efficiency and reliability.
Summary:
WSC60N03-VB is a high-efficiency, low-power loss single N-Channel MOSFET suitable for a wide range of power management and high-power applications. Its extremely low on-resistance and high current handling capability make it an excellent choice for designing efficient power management systems.
# 1. **Power management system:**
The low RDS(ON) characteristics of WSC60N03-VB make it very suitable for power management systems, especially DC-DC converters, power factor correction (PFC) circuits and inverters. It can significantly reduce power loss and improve conversion efficiency. Application scenarios include consumer electronics, communication equipment, power tools and battery management systems.
# 6. **Automotive electronics and industrial control:**
In automotive electronics and industrial control systems, WSC60N03-VB can be used as a key component in load switches and power conversion modules. For example, it can be used in power management modules, motor drive circuits and various control power modules of electric vehicles to improve system efficiency and reliability.
Summary:
WSC60N03-VB is a high-efficiency, low-power loss single N-Channel MOSFET suitable for a wide range of power management and high-power applications. Its extremely low on-resistance and high current handling capability make it an excellent choice for designing efficient power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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