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WPMD3002-8 TR-VB Product details

Product introduction:

1. **Product Introduction**

WPMD3002-8 TR-VB is a dual P-channel MOSFET (P+P-Channel) in SOP8 package, designed for low voltage, high-efficiency power switch applications. Its maximum drain-source voltage (VDS) is -30V, which can withstand high reverse voltage and is suitable for battery-powered devices or other power management systems that require high-efficiency switches. The threshold voltage (Vth) of this MOSFET is -1.7V, which can be turned on at a lower voltage, has good conduction performance and reduces power loss. The on-resistance (RDS(ON)) of WPMD3002-8 TR-VB is 45mΩ (VGS=4.5V) and 35mΩ (VGS=10V), respectively, showing its excellent conduction capability, especially suitable for high-efficiency, high-performance switching circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-P+P -30V -1.7V -7.3A 35mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-P+P -30V -1.7V -7.3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-P+P -30V -1.7V -7.3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-P+P
2. **Detailed parameter description**

- **Package type**: SOP8
- **Configuration**: Dual P-channel (P+P-Channel)
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 45mΩ (@VGS=4.5V)
- 35mΩ (@VGS=10V)
- **Drain current (ID)**: -7.3A
- **Technology**: Trench

Domain and module applications:

3. **Application Examples**

The low threshold voltage and low on-resistance of WPMD3002-8 TR-VB make it very suitable for low voltage, high efficiency switching circuits. The following are its common application areas:

- **Battery Management and Load Switch**: WPMD3002-8 TR-VB can be used as a load switch in battery management systems, especially in mobile devices and battery-driven electronic products, to ensure efficient power control and optimize battery life. Its low RDS(ON) characteristics effectively reduce power loss and extend battery life.

- **DC-DC Converter**: In DC-DC converters, especially in step-down or step-up conversion circuits, WPMD3002-8 TR-VB improves overall conversion efficiency by reducing switching losses, and is very suitable for power modules that require high efficiency and low standby power consumption.

- **Power Tools and Small Electric Equipment**: In power tools or small electric equipment, WPMD3002-8 TR-VB can provide efficient current switching control. Its low on-resistance can reduce heat generation and improve the overall stability and life of the device.

- **Power modules and power supplies**: This MOSFET is also widely used in power modules or high-efficiency power supplies, especially in low-voltage, high-power density scenarios, such as LED driver power supplies, home appliance controllers, etc.

The dual P-channel design and low RDS(ON) of the WPMD3002-8 TR-VB make it an ideal choice for applications such as power management, power conversion and load switching in many fields, especially for low-power, high-efficiency power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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