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WNMD2156-8 TR-VB Product details
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WNMD2156-8 TR-VB MOSFET Product Introduction
The WNMD2156-8 TR-VB is a common-source configuration dual N-channel MOSFET in a TSSOP8 package, designed for low-voltage, high-efficiency electronic applications. It has a maximum drain-source voltage (V_DS) of 20V and a maximum drain current (I_D) of 7.6A. The on-resistance (R_DS(ON)) of this MOSFET is 14mΩ at V_GS = 4.5V, which is suitable for applications requiring fast switching response and high efficiency. Its low on-resistance and compact package make it ideal for designs with space constraints and high energy efficiency requirements, such as low-voltage power management, power conversion modules, and portable devices. The excellent performance and high efficiency of the WNM2156-8 TR-VB make it an ideal choice for many high-frequency, low-power applications.
The WNMD2156-8 TR-VB is a common-source configuration dual N-channel MOSFET in a TSSOP8 package, designed for low-voltage, high-efficiency electronic applications. It has a maximum drain-source voltage (V_DS) of 20V and a maximum drain current (I_D) of 7.6A. The on-resistance (R_DS(ON)) of this MOSFET is 14mΩ at V_GS = 4.5V, which is suitable for applications requiring fast switching response and high efficiency. Its low on-resistance and compact package make it ideal for designs with space constraints and high energy efficiency requirements, such as low-voltage power management, power conversion modules, and portable devices. The excellent performance and high efficiency of the WNM2156-8 TR-VB make it an ideal choice for many high-frequency, low-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
| **Parameter** | **Description** |
|-----------------------|-----------------------------------------------------------|
| **Package type** | TSSOP8 |
| **Configuration** | Common Drain dual N-channel MOSFET |
| **V_DS (drain-source voltage)** | 20V |
| **V_GS (gate-source voltage)** | ±12V |
| **V_th (gate-source threshold voltage)** | 0.5~1.5V |
| **R_DS(ON) (on-resistance)** | 18mΩ @ V_GS = 2.5V; 14mΩ @ V_GS = 4.5V |
| **I_D (drain current)** | 7.6A |
| **Technology** | Trench technology|
| **Maximum power loss** | Designed for low voltage applications with low power loss |
| **Operating temperature range** | -55°C to +150°C |
| **Features** | Compact package, low on-resistance, high performance, suitable for high frequency and low power applications |
| **Parameter** | **Description** |
|-----------------------|-----------------------------------------------------------|
| **Package type** | TSSOP8 |
| **Configuration** | Common Drain dual N-channel MOSFET |
| **V_DS (drain-source voltage)** | 20V |
| **V_GS (gate-source voltage)** | ±12V |
| **V_th (gate-source threshold voltage)** | 0.5~1.5V |
| **R_DS(ON) (on-resistance)** | 18mΩ @ V_GS = 2.5V; 14mΩ @ V_GS = 4.5V |
| **I_D (drain current)** | 7.6A |
| **Technology** | Trench technology|
| **Maximum power loss** | Designed for low voltage applications with low power loss |
| **Operating temperature range** | -55°C to +150°C |
| **Features** | Compact package, low on-resistance, high performance, suitable for high frequency and low power applications |
Domain and module applications：
Product Applications and Module Examples
1. **Low Voltage Power Management**
- The WNMD2156-8 TR-VB is particularly suitable for low voltage power management systems. Its low on-resistance and high switching speed can improve power management efficiency and reduce energy loss, making it particularly suitable for power regulation modules in smartphones, tablets, and other portable devices. In these applications, MOSFETs can be used in power conversion, voltage regulators, regulated power supplies, and other power protection circuits.
2. **Portable Devices and Battery Management**
- Due to its high efficiency and low power loss, the WNMD2156-8 TR-VB plays an important role in portable devices such as smart watches, headphones, and other wireless devices. In these devices, MOSFETs can be used in battery management, battery chargers, overcharge protection, and battery charge monitoring circuits to ensure that the system operates at high efficiency while extending battery life.
3. **LED Drive Circuit**
- This MOSFET is also suitable for LED drive circuits, especially in application scenarios that require smaller packages and high efficiency. With its fast switching characteristics and low on-resistance, the WNMD2156-8 TR-VB can provide stable current control, ensuring efficient and stable operation of LED lamps.
4. **Consumer Electronics**
- In consumer electronics, especially electronic devices with high power and efficiency requirements, the WNMD2156-8 TR-VB is an ideal choice. It can effectively handle current and provide efficient power management, suitable for power conversion modules of products such as USB power adapters, battery chargers, wireless devices, mobile power supplies, etc.
5. **Smart Home Systems**
- In smart home devices, the WNMD2156-8 TR-VB can be used for smart sockets, smart sensors and other small appliances. Its high efficiency and low on-resistance can help these devices run stably and efficiently without consuming too much power.
6. **Power Conversion and DC-DC Converters**
- WNMD2156-8 TR-VB is also very suitable for various power conversion modules, especially for DC-DC converters, voltage regulation modules and power management systems. Due to its low on-resistance, it can provide high efficiency in high-frequency switching mode, reduce power loss, and improve overall system efficiency.
1. **Low Voltage Power Management**
- The WNMD2156-8 TR-VB is particularly suitable for low voltage power management systems. Its low on-resistance and high switching speed can improve power management efficiency and reduce energy loss, making it particularly suitable for power regulation modules in smartphones, tablets, and other portable devices. In these applications, MOSFETs can be used in power conversion, voltage regulators, regulated power supplies, and other power protection circuits.
2. **Portable Devices and Battery Management**
- Due to its high efficiency and low power loss, the WNMD2156-8 TR-VB plays an important role in portable devices such as smart watches, headphones, and other wireless devices. In these devices, MOSFETs can be used in battery management, battery chargers, overcharge protection, and battery charge monitoring circuits to ensure that the system operates at high efficiency while extending battery life.
3. **LED Drive Circuit**
- This MOSFET is also suitable for LED drive circuits, especially in application scenarios that require smaller packages and high efficiency. With its fast switching characteristics and low on-resistance, the WNMD2156-8 TR-VB can provide stable current control, ensuring efficient and stable operation of LED lamps.
4. **Consumer Electronics**
- In consumer electronics, especially electronic devices with high power and efficiency requirements, the WNMD2156-8 TR-VB is an ideal choice. It can effectively handle current and provide efficient power management, suitable for power conversion modules of products such as USB power adapters, battery chargers, wireless devices, mobile power supplies, etc.
5. **Smart Home Systems**
- In smart home devices, the WNMD2156-8 TR-VB can be used for smart sockets, smart sensors and other small appliances. Its high efficiency and low on-resistance can help these devices run stably and efficiently without consuming too much power.
6. **Power Conversion and DC-DC Converters**
- WNMD2156-8 TR-VB is also very suitable for various power conversion modules, especially for DC-DC converters, voltage regulation modules and power management systems. Due to its low on-resistance, it can provide high efficiency in high-frequency switching mode, reduce power loss, and improve overall system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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