Product introduction：
WNM2306-3 TR-VB Product Introduction
WNM2306-3 TR-VB is a high-performance N-Channel MOSFET in a SOT23-3 package, designed for low-voltage and high-efficiency switching applications. With a maximum drain-source voltage (VDS) of 20V, this MOSFET is suitable for low-voltage power management, mobile devices, and small electronic devices. Its gate-source voltage (VGS) is ±12V, and its threshold voltage (Vth) is between 0.5V and 1.5V, ensuring stable switching at low voltages. Its on-resistance (RDS(ON)) is 28mΩ at VGS = 4.5V, providing low power consumption and high-efficiency power conversion. With a maximum drain current (ID) of 6A, this MOSFET can meet the needs of high-efficiency power regulation and switching, and is suitable for a variety of electronic applications, including low-power power management, communication modules, battery-driven systems, etc.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
20V |
12（±V） |
0.5~1.5V |
6A |
42mΩ |
|
|
|
WNM2306-3 TR-VB parameter description
- **Package type**: SOT23-3
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 42mΩ @ VGS = 2.5V
- 28mΩ @ VGS = 4.5V
- **Maximum drain current (ID)**: 6A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Application areas**: Low power power management, mobile devices, battery management, communication modules, etc.
Domain and module applications：
Applications and module examples
1. **Low-power power management**
The WNM2306-3 TR-VB MOSFET is suitable for low-power power management systems, especially in situations where miniaturization, high efficiency and low power consumption are required. The low on-resistance and small package of this MOSFET are very suitable for use in power management circuits of micro power converters and mobile devices, which can significantly improve the battery life of the system.
2. **Mobile devices**
In portable devices such as smartphones and wearable devices, the WNM2306-3 TR-VB MOSFET can be used as part of a battery management system to control the charging and discharging process of the battery. The MOSFET can effectively regulate the current and reduce the energy loss of the battery, thereby extending the battery life of the device.
3. **Battery Management System (BMS)**
As a switching element in the battery management system, the WNM2306-3 TR-VB can effectively control the charging and discharging of the battery. Due to its excellent conductivity and low threshold voltage, it can ensure stable operation in various battery management modes and is particularly suitable for the management of small lithium batteries.
4. **LED driver**
In LED driver, WNM2306-3 TR-VB MOSFET can be used as an efficient switching element. Its low RDS(ON) characteristics make it very suitable for providing less energy loss in power conversion and ensuring that LED lamps can continue to operate stably and achieve optimal energy efficiency.
5. **Communication module**
This MOSFET is also widely used in low-power communication modules, especially in radio frequency (RF) and wireless communication equipment. Its fast switching characteristics and low on-resistance make it an ideal switching element, which can effectively improve the efficiency of communication modules and ensure stable signal transmission.
6. **Small electronic devices**
Due to the small package (SOT23-3) and high performance of WNM2306-3 TR-VB, it is widely used in various small electronic devices such as sensors, wireless devices and portable displays. Its low power consumption and high-efficiency switching characteristics enable the device to maintain stable performance under long-term operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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