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WFW24N50W-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction:**
WFW24N50W-VB is a high-performance single N-Channel MOSFET in TO247 package with high withstand voltage and excellent switching characteristics. Its maximum drain-source voltage (VDS) is 500V, suitable for high-voltage power management, power conversion, and high-voltage environments such as power tools. This MOSFET uses SJ_Multi-EPI technology to improve the current carrying capacity while maintaining a low on-resistance (RDS(ON)), providing it with high-efficiency power conversion capabilities. The maximum drain current (ID) is 40A, which can meet the requirements of higher current applications and is widely used in power adapters, power tool drivers, battery management systems and other fields.
WFW24N50W-VB is a high-performance single N-Channel MOSFET in TO247 package with high withstand voltage and excellent switching characteristics. Its maximum drain-source voltage (VDS) is 500V, suitable for high-voltage power management, power conversion, and high-voltage environments such as power tools. This MOSFET uses SJ_Multi-EPI technology to improve the current carrying capacity while maintaining a low on-resistance (RDS(ON)), providing it with high-efficiency power conversion capabilities. The maximum drain current (ID) is 40A, which can meet the requirements of higher current applications and is widely used in power adapters, power tool drivers, battery management systems and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. **Detailed parameter description:**
- **Package type:** TO247
- **Configuration:** Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS):** 500V
- **Maximum gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.8V
- **On-resistance (RDS(ON)):**
- 80mΩ @ VGS = 10V
- **Maximum drain current (ID):** 40A
- **Technology:** SJ_Multi-EPI (Super Junction Multi-EPI)
- **Maximum power loss (P_D):** Provides lower power loss depending on operating conditions.
- **Operating temperature range (T_j): ** -55°C to 150°C
- **Gate charge (Qg): ** Moderate, suitable for general switching frequency applications
- **Heat dissipation performance: ** High, suitable for high power applications
- **Short circuit protection: ** Short circuit protection design can be realized according to different applications
- **Package type:** TO247
- **Configuration:** Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS):** 500V
- **Maximum gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.8V
- **On-resistance (RDS(ON)):**
- 80mΩ @ VGS = 10V
- **Maximum drain current (ID):** 40A
- **Technology:** SJ_Multi-EPI (Super Junction Multi-EPI)
- **Maximum power loss (P_D):** Provides lower power loss depending on operating conditions.
- **Operating temperature range (T_j): ** -55°C to 150°C
- **Gate charge (Qg): ** Moderate, suitable for general switching frequency applications
- **Heat dissipation performance: ** High, suitable for high power applications
- **Short circuit protection: ** Short circuit protection design can be realized according to different applications
Domain and module applications：
3. **Application fields and module examples:**
# 1. **High-voltage power management:**
WFW24N50W-VB excels in high-voltage power management systems. With a maximum drain-source voltage of 500V, it is suitable for AC-DC power converters, battery chargers, UPS (uninterruptible power supplies), and medium- and high-power power adapters. Its low on-resistance (80mΩ) ensures that power loss is reduced and system efficiency is improved during power conversion.
# 6. **Automotive electronics applications:**
In automotive electronic control systems, WFW24N50W-VB can also be used for battery management, power window control, power seat adjustment systems, and other high-voltage circuits. Its high-voltage and high-current resistance enables it to cope with the complex power requirements in automotive systems and provide stable and reliable switching performance.
Summary:
WFW24N50W-VB is a high-performance single N-Channel MOSFET, using TO247 package, suitable for 500V high voltage environment, maximum drain current of 40A, using advanced SJ_Multi-EPI technology, providing excellent switching characteristics and low on-resistance. This MOSFET is widely used in high-voltage power management, power tool drive, battery management system, DC-DC converter, LED drive and automotive electronics, etc., which can effectively reduce power loss and improve system efficiency, and meet the needs of high power conversion and current regulation.
# 1. **High-voltage power management:**
WFW24N50W-VB excels in high-voltage power management systems. With a maximum drain-source voltage of 500V, it is suitable for AC-DC power converters, battery chargers, UPS (uninterruptible power supplies), and medium- and high-power power adapters. Its low on-resistance (80mΩ) ensures that power loss is reduced and system efficiency is improved during power conversion.
# 6. **Automotive electronics applications:**
In automotive electronic control systems, WFW24N50W-VB can also be used for battery management, power window control, power seat adjustment systems, and other high-voltage circuits. Its high-voltage and high-current resistance enables it to cope with the complex power requirements in automotive systems and provide stable and reliable switching performance.
Summary:
WFW24N50W-VB is a high-performance single N-Channel MOSFET, using TO247 package, suitable for 500V high voltage environment, maximum drain current of 40A, using advanced SJ_Multi-EPI technology, providing excellent switching characteristics and low on-resistance. This MOSFET is widely used in high-voltage power management, power tool drive, battery management system, DC-DC converter, LED drive and automotive electronics, etc., which can effectively reduce power loss and improve system efficiency, and meet the needs of high power conversion and current regulation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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