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WFF20N60S-VB Product details

Product introduction:

1. **Product Introduction:**

WFF20N60S-VB is a single N-Channel MOSFET in TO220F package, suitable for high voltage and high current applications. Its rated drain-source voltage (VDS) is 650V, which can withstand high voltage stress and is suitable for high voltage switching power supplies, inverters, and power conversion modules. This product adopts SJ_Multi-EPI technology and has a low on-resistance (RDS(ON) = 160mΩ @ VGS=10V), which provides good conduction efficiency and thermal management performance while ensuring high voltage performance. The maximum gate-source voltage (VGS) is ±30V, the threshold voltage (Vth) is 3.5V, and the maximum drain current is 20A. WFF20N60S-VB is suitable for systems that require efficient power conversion and current control, and can work stably under high current and high voltage environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. **Detailed parameter description:**

- **Package type:** TO220F
- **Configuration:** Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS):** 650V
- **Maximum gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):**
- 160mΩ @ VGS = 10V
- **Maximum drain current (ID):** 20A
- **Technology:** SJ_Multi-EPI
- **Maximum power loss (P_D):** Calculated according to operating conditions
- **Operating temperature range (T_j):** -55°C to 150°C

Domain and module applications:

3. **Application fields and module examples:**

# 1. **High-voltage switching power supply:**
WFF20N60S-VB has a drain-source voltage of 650V, making it particularly suitable for high-voltage switching power supplies (SMPS), especially in power conversion applications that require high efficiency and reliability. It can be used in high-voltage conversion circuits such as power adapters, battery chargers, and power management modules to provide efficient and stable voltage conversion.

# 6. **TV and monitor backlight power supply:**
WFF20N60S-VB is also widely used in the backlight power supply systems of TVs and monitors. In these devices, stable voltage conversion and high current handling capabilities are essential. The high voltage and high current carrying capabilities of WFF20N60S-VB make it an ideal choice for these applications.

Summary:

WFF20N60S-VB is an N-Channel MOSFET with 650V high voltage carrying capacity and 20A high current carrying capacity. It adopts TO220F package and SJ_Multi-EPI technology, and is suitable for systems with high efficiency power conversion and current control. It has a wide range of applications in high-voltage switching power supplies, inverters, power tools, motor drive systems, power amplifiers, etc., and can provide efficient and stable power management and power conversion, especially for occasions that require high voltage, high current and have strict requirements on conduction loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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