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W410-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction:**
W410-VB is a high-performance single-channel N-Channel MOSFET in TO262 package. This MOSFET provides a maximum drain-source voltage (VDS) of 100V, supports a drain current (ID) of up to 100A, and has a low on-resistance (RDS(ON)) characteristic of 10mΩ @ VGS = 4.5V and 9mΩ @ VGS = 10V, making it perform well in high-current switching applications. W410-VB uses Trench technology to provide high efficiency, low power consumption, and high reliability. It is suitable for various power management and switching applications, especially in high current load and high voltage environments, which can effectively reduce energy loss and heat.
W410-VB is a high-performance single-channel N-Channel MOSFET in TO262 package. This MOSFET provides a maximum drain-source voltage (VDS) of 100V, supports a drain current (ID) of up to 100A, and has a low on-resistance (RDS(ON)) characteristic of 10mΩ @ VGS = 4.5V and 9mΩ @ VGS = 10V, making it perform well in high-current switching applications. W410-VB uses Trench technology to provide high efficiency, low power consumption, and high reliability. It is suitable for various power management and switching applications, especially in high current load and high voltage environments, which can effectively reduce energy loss and heat.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. **Detailed parameter description:**
- **Package type:** TO262
- **Configuration:** Single channel N-Channel
- **Maximum drain-source voltage (VDS):** 100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 2.5V
- **On-resistance (RDS(ON)):**
- 10mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
- **Maximum drain current (ID):** 100A
- **Technology:** Trench technology
- **Package type:** TO262
- **Configuration:** Single channel N-Channel
- **Maximum drain-source voltage (VDS):** 100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 2.5V
- **On-resistance (RDS(ON)):**
- 10mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
- **Maximum drain current (ID):** 100A
- **Technology:** Trench technology
Domain and module applications：
3. **Application fields and module examples:**
# 1. **High-efficiency power conversion module:**
The low on-resistance and high current handling capability of the W410-VB make it very useful in power conversion modules, especially in applications that require high efficiency and high power conversion, such as DC-DC converters and AC-DC power adapters. Its low RDS(ON) enables the power module to effectively reduce power loss during operation and improve overall efficiency.
# 6. **Power factor correction (PFC) circuit:**
In the PFC circuit, the W410-VB can be used as a key component in the power conversion module, especially for the efficient conversion of AC-DC power. It can carry large currents and provide low on-resistance, ensuring that the system can maintain a high power factor and reduce energy waste. The high efficiency of the W410-VB in this application can help reduce the heat and power loss of the overall system.
Summary:
W410-VB is an N-Channel MOSFET suitable for high current and high power applications. It is widely used in power management, electric vehicles, LED drivers, battery management and industrial automation. Its low RDS(ON) and high current handling capabilities enable it to perform well in power conversion, battery management and high-efficiency drive systems. By adopting Trench technology, W410-VB provides high-efficiency and low-loss performance, which can effectively meet the high-power and high-efficiency requirements of modern electronic systems.
# 1. **High-efficiency power conversion module:**
The low on-resistance and high current handling capability of the W410-VB make it very useful in power conversion modules, especially in applications that require high efficiency and high power conversion, such as DC-DC converters and AC-DC power adapters. Its low RDS(ON) enables the power module to effectively reduce power loss during operation and improve overall efficiency.
# 6. **Power factor correction (PFC) circuit:**
In the PFC circuit, the W410-VB can be used as a key component in the power conversion module, especially for the efficient conversion of AC-DC power. It can carry large currents and provide low on-resistance, ensuring that the system can maintain a high power factor and reduce energy waste. The high efficiency of the W410-VB in this application can help reduce the heat and power loss of the overall system.
Summary:
W410-VB is an N-Channel MOSFET suitable for high current and high power applications. It is widely used in power management, electric vehicles, LED drivers, battery management and industrial automation. Its low RDS(ON) and high current handling capabilities enable it to perform well in power conversion, battery management and high-efficiency drive systems. By adopting Trench technology, W410-VB provides high-efficiency and low-loss performance, which can effectively meet the high-power and high-efficiency requirements of modern electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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