Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
**
- **Package type**: SOP8
- **Configuration**: Bipolar N+P channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.6V (N channel); -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- 24mΩ (N channel) @VGS=4.5V
- 50mΩ (P channel) @VGS=4.5V
- 18mΩ (N channel) @VGS=10V
- 40mΩ (P channel) @VGS=10V
- **Drain current (ID)**: ±8A
- **Technology**: Trench
- **Application scenarios**: power management, DC-DC converters, load control, battery management, power switches.
3
Domain and module applications:
**Application Examples**
The bipolar N+P channel structure of W306-VB makes it very suitable for bidirectional current control and efficient power management systems. First, it can be used as a switching element in DC-DC converters, especially in medium-power applications with a narrow voltage range, such as 5V, 12V power modules. Due to the combination of N+P channels, it can provide better efficiency and higher switching frequency in bidirectional load regulation, which is very suitable for battery-powered devices such as portable devices and smart home products, and can efficiently control the battery charging and discharging process. In addition, W306-VB is also very suitable for load control applications, such as motor drives, power tools, and LED drive circuits, which require precise control of current direction and switching. Since the product can be enabled at a lower gate-source voltage (especially -1.7V for P-channel MOSFETs), it has advantages in low-power applications to optimize energy consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours