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W298-VB Product details
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W298-VB MOSFET Product Introduction
W298-VB is a high-performance N-channel MOSFET in TO262 package, designed for high current and high-efficiency power switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 100V, and the gate-source voltage (VGS) supports up to ±20V. Its threshold voltage (Vth) is 2.5V, which can be turned on at a lower gate voltage, suitable for a variety of power management systems and high-efficiency switching circuits. The on-resistance (RDS(ON)) of W298-VB is 10mΩ at VGS=4.5V, and drops to 9mΩ at VGS=10V. It has excellent conduction performance and is particularly suitable for applications requiring high current and low power consumption. The maximum drain current (ID) can reach 100A, enabling it to meet the needs of high-power devices. The use of Trench technology optimizes the switching speed and conduction characteristics, further improving system efficiency and reducing power consumption.
W298-VB is a high-performance N-channel MOSFET in TO262 package, designed for high current and high-efficiency power switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 100V, and the gate-source voltage (VGS) supports up to ±20V. Its threshold voltage (Vth) is 2.5V, which can be turned on at a lower gate voltage, suitable for a variety of power management systems and high-efficiency switching circuits. The on-resistance (RDS(ON)) of W298-VB is 10mΩ at VGS=4.5V, and drops to 9mΩ at VGS=10V. It has excellent conduction performance and is particularly suitable for applications requiring high current and low power consumption. The maximum drain current (ID) can reach 100A, enabling it to meet the needs of high-power devices. The use of Trench technology optimizes the switching speed and conduction characteristics, further improving system efficiency and reducing power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
W298-VB MOSFET Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 9mΩ@VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology optimizes switching performance and conduction characteristics, suitable for high current and high efficiency applications.
- **Application scenarios**: Suitable for high power and high efficiency power control applications such as power management, load switches, DC-DC converters, and battery management systems.
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 10mΩ@VGS=4.5V
- 9mΩ@VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench technology optimizes switching performance and conduction characteristics, suitable for high current and high efficiency applications.
- **Application scenarios**: Suitable for high power and high efficiency power control applications such as power management, load switches, DC-DC converters, and battery management systems.
Domain and module applications：
W298-VB Applications and Modules
1. **High-power power management system**
W298-VB is suitable for power management systems that require high current and high efficiency, especially high-power DC-DC converters, AC power modules and power control systems. The low on-resistance and high current carrying capacity of MOSFET enable it to provide low-loss, high-efficiency switching control in power conversion, and is widely used in equipment such as power electronics, solar inverters and high-efficiency power adapters.
2. **Battery Management System (BMS)**
In the battery management system, W298-VB acts as a switching element to achieve efficient battery charge and discharge control. Due to its high current handling capability (maximum 100A), it is very suitable for high-current battery management scenarios such as electric vehicles, battery energy storage systems (BESS), etc. The low RDS(ON) characteristics of MOSFET help reduce energy loss, improve charging and discharging efficiency, and ensure long-term stable operation of the battery system.
3. **Electric Vehicle (EV) Powertrain**
In the powertrain of electric vehicles, W298-VB can be used as a switching element in motor drive circuits and battery control modules. The high current capability and low on-resistance of MOSFET enable it to efficiently control the discharge of the battery and the drive current of the motor, thereby improving the power efficiency and endurance of the vehicle.
4. **High-frequency DC-DC converter**
The excellent switching performance of W298-VB makes it suitable for use in high-frequency DC-DC converters, especially in applications requiring high current. This MOSFET can provide high-efficiency voltage conversion, especially in buck and boost converters. It is widely used in communication equipment, data center power supplies, embedded systems and other fields.
5. **Industrial Power Supplies and Inverters**
In industrial applications, W298-VB is often used in power conversion modules, inverters and servo drive systems. Its high drain current carrying capacity and low on-resistance enable it to handle large amounts of current, making it suitable for high-power devices used for power transmission and inversion. For example, in wind and solar power generation systems, the W298-VB can efficiently convert DC to AC and ensure high efficiency and reliability of the system.
6. **LED drive circuit**
W298-VB is also widely used in LED drive circuits. Due to its low on-resistance and high current capability, this MOSFET can effectively drive LED arrays to ensure the stability and efficiency of lighting systems. It plays an important role in devices such as high-power LED drivers and smart lighting systems.
7. **Consumer electronics and portable devices**
W298-VB is widely used in consumer electronics products such as portable devices, smart home products, etc. In these products, MOSFET can provide low-power power management and load switch control, extending battery life and improving the overall performance of the device.
1. **High-power power management system**
W298-VB is suitable for power management systems that require high current and high efficiency, especially high-power DC-DC converters, AC power modules and power control systems. The low on-resistance and high current carrying capacity of MOSFET enable it to provide low-loss, high-efficiency switching control in power conversion, and is widely used in equipment such as power electronics, solar inverters and high-efficiency power adapters.
2. **Battery Management System (BMS)**
In the battery management system, W298-VB acts as a switching element to achieve efficient battery charge and discharge control. Due to its high current handling capability (maximum 100A), it is very suitable for high-current battery management scenarios such as electric vehicles, battery energy storage systems (BESS), etc. The low RDS(ON) characteristics of MOSFET help reduce energy loss, improve charging and discharging efficiency, and ensure long-term stable operation of the battery system.
3. **Electric Vehicle (EV) Powertrain**
In the powertrain of electric vehicles, W298-VB can be used as a switching element in motor drive circuits and battery control modules. The high current capability and low on-resistance of MOSFET enable it to efficiently control the discharge of the battery and the drive current of the motor, thereby improving the power efficiency and endurance of the vehicle.
4. **High-frequency DC-DC converter**
The excellent switching performance of W298-VB makes it suitable for use in high-frequency DC-DC converters, especially in applications requiring high current. This MOSFET can provide high-efficiency voltage conversion, especially in buck and boost converters. It is widely used in communication equipment, data center power supplies, embedded systems and other fields.
5. **Industrial Power Supplies and Inverters**
In industrial applications, W298-VB is often used in power conversion modules, inverters and servo drive systems. Its high drain current carrying capacity and low on-resistance enable it to handle large amounts of current, making it suitable for high-power devices used for power transmission and inversion. For example, in wind and solar power generation systems, the W298-VB can efficiently convert DC to AC and ensure high efficiency and reliability of the system.
6. **LED drive circuit**
W298-VB is also widely used in LED drive circuits. Due to its low on-resistance and high current capability, this MOSFET can effectively drive LED arrays to ensure the stability and efficiency of lighting systems. It plays an important role in devices such as high-power LED drivers and smart lighting systems.
7. **Consumer electronics and portable devices**
W298-VB is widely used in consumer electronics products such as portable devices, smart home products, etc. In these products, MOSFET can provide low-power power management and load switch control, extending battery life and improving the overall performance of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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