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W26NM50-VB Product details
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Product Introduction
**W26NM50-VB** is a single N-type MOSFET with a TO247 package, which has extremely high voltage tolerance and high current carrying capacity. The maximum drain-source voltage (VDS) of this MOSFET is **500V**, which is suitable for high-voltage application scenarios; its gate-source voltage (VGS) range is **±30V**, which is suitable for a variety of drive voltages. The threshold voltage (Vth) is **3.8V**, which allows it to work normally at a lower gate voltage. The on-resistance (RDS(ON)) is **80mΩ** (VGS = 10V), which can efficiently transmit large currents at low power losses, and the maximum drain current (ID) is **40A**. This product uses **SJ_Multi-EPI** technology, which can effectively reduce the on-resistance and improve the switching performance. It is suitable for power supplies and power management modules that require high voltage, high current and high efficiency. It is suitable for power electronics, inverters, power tools and industrial equipment.
**W26NM50-VB** is a single N-type MOSFET with a TO247 package, which has extremely high voltage tolerance and high current carrying capacity. The maximum drain-source voltage (VDS) of this MOSFET is **500V**, which is suitable for high-voltage application scenarios; its gate-source voltage (VGS) range is **±30V**, which is suitable for a variety of drive voltages. The threshold voltage (Vth) is **3.8V**, which allows it to work normally at a lower gate voltage. The on-resistance (RDS(ON)) is **80mΩ** (VGS = 10V), which can efficiently transmit large currents at low power losses, and the maximum drain current (ID) is **40A**. This product uses **SJ_Multi-EPI** technology, which can effectively reduce the on-resistance and improve the switching performance. It is suitable for power supplies and power management modules that require high voltage, high current and high efficiency. It is suitable for power electronics, inverters, power tools and industrial equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: W26NM50-VB
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Maximum power dissipation**: Depends on the combination of RDS(ON) and drain current, suitable for medium and high power applications
- **Application Technology**: This MOSFET uses **SJ_Multi-EPI** technology to provide low on-resistance and efficient switching characteristics, suitable for high voltage and high power applications.
- **Model**: W26NM50-VB
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 500V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 40A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Maximum power dissipation**: Depends on the combination of RDS(ON) and drain current, suitable for medium and high power applications
- **Application Technology**: This MOSFET uses **SJ_Multi-EPI** technology to provide low on-resistance and efficient switching characteristics, suitable for high voltage and high power applications.
Domain and module applications：
Applicable fields and modules
**1. Power electronics applications (inverters, UPS, power converters, etc.)
W26NM50-VB is an ideal choice for power electronics systems, especially in **inverter** and **uninterruptible power supply (UPS)** systems. Its **500V** high withstand voltage capability enables it to handle higher voltage inputs, and is particularly suitable for solar inverters, wind energy systems, power conversion systems, etc. The high current carrying capacity (40A) of the MOSFET ensures stable operation under high load conditions. With an on-resistance of **80mΩ**, the low power consumption characteristics help improve overall system efficiency and reduce heat loss.
**2. Power tools and industrial equipment**
In **power tools** and **industrial equipment**, the W26NM50-VB MOSFET can be used for power control, motor drives, switching power supplies, and other high-efficiency power management applications. Due to its high current carrying capacity and stable switching characteristics, the W26NM50-VB is able to provide high power drives required in power tools (such as electric drills, saws, etc.) and mechanical equipment, especially in environments with high current requirements and long-term operation, providing stable and efficient current control.
**3. Electric Vehicles and Battery Management Systems (BMS)**
In **Electric Vehicles (EV)** and **Battery Management Systems (BMS)**, the W26NM50-VB is suitable for use as battery charging and discharging control, power conversion modules, etc. The low on-resistance of the MOSFET ensures maximum energy efficiency during battery charging and discharging, reduces losses, and increases the service life of the battery. Its high current carrying capacity (40A) enables it to handle the high power requirements in electric vehicle battery packs and is suitable for high-voltage battery systems.
**4. Solar Power Generation Systems**
In **Solar Power Generation Systems**, the W26NM50-VB is mainly used in **DC-DC converters** and **inverters**. Its **500V** high voltage withstand capability makes it suitable for use with the high voltage output of solar panels, and its low on-resistance improves conversion efficiency and reduces power loss, making it suitable for converting solar energy into AC power for home or commercial use.
**5. Linear and switching power modules**
W26NM50-VB MOSFET can be widely used in **switching power modules** and **linear power modules**, especially in situations where high current and high voltage withstand capability are required. For example, it can be used in high-power adapters, chargers, and various power supply devices to provide efficient power conversion and stable power output. Its low on-resistance reduces the thermal load of the power system and ensures long-term efficient operation.
**6. High-power switching and inverters**
In **variable frequency drive (VFD)** systems, the high current carrying capacity and high voltage withstand of W26NM50-VB make it very suitable for motor control and speed regulation systems. It can provide fast and precise switching control, adapt to high-frequency conversion in industrial control systems, ensure efficient and stable motor operation, and is widely used in air conditioners, pumps, fans and other industrial equipment.
**7. High-power LED drive circuit**
W26NM50-VB is also suitable for high-power **LED drive circuit**. Its high voltage and high current carrying capacity, combined with low on-resistance, enable it to have lower power consumption and higher current efficiency in LED drive systems, and is suitable for high-power LED lighting systems that require stable current control.
**Summary**:
W26NM50-VB MOSFET is a single N-type MOSFET suitable for high voltage (500V), high current (40A) and high-efficiency applications. It is widely used in power electronics, inverters, power tools, electric vehicle battery management systems, solar power generation systems, switching power supplies and high-power LED drive circuits. Its low on-resistance, high current carrying capacity and efficient switching characteristics make it widely applicable in various high-power and high-voltage power conversion and control modules.
**1. Power electronics applications (inverters, UPS, power converters, etc.)
W26NM50-VB is an ideal choice for power electronics systems, especially in **inverter** and **uninterruptible power supply (UPS)** systems. Its **500V** high withstand voltage capability enables it to handle higher voltage inputs, and is particularly suitable for solar inverters, wind energy systems, power conversion systems, etc. The high current carrying capacity (40A) of the MOSFET ensures stable operation under high load conditions. With an on-resistance of **80mΩ**, the low power consumption characteristics help improve overall system efficiency and reduce heat loss.
**2. Power tools and industrial equipment**
In **power tools** and **industrial equipment**, the W26NM50-VB MOSFET can be used for power control, motor drives, switching power supplies, and other high-efficiency power management applications. Due to its high current carrying capacity and stable switching characteristics, the W26NM50-VB is able to provide high power drives required in power tools (such as electric drills, saws, etc.) and mechanical equipment, especially in environments with high current requirements and long-term operation, providing stable and efficient current control.
**3. Electric Vehicles and Battery Management Systems (BMS)**
In **Electric Vehicles (EV)** and **Battery Management Systems (BMS)**, the W26NM50-VB is suitable for use as battery charging and discharging control, power conversion modules, etc. The low on-resistance of the MOSFET ensures maximum energy efficiency during battery charging and discharging, reduces losses, and increases the service life of the battery. Its high current carrying capacity (40A) enables it to handle the high power requirements in electric vehicle battery packs and is suitable for high-voltage battery systems.
**4. Solar Power Generation Systems**
In **Solar Power Generation Systems**, the W26NM50-VB is mainly used in **DC-DC converters** and **inverters**. Its **500V** high voltage withstand capability makes it suitable for use with the high voltage output of solar panels, and its low on-resistance improves conversion efficiency and reduces power loss, making it suitable for converting solar energy into AC power for home or commercial use.
**5. Linear and switching power modules**
W26NM50-VB MOSFET can be widely used in **switching power modules** and **linear power modules**, especially in situations where high current and high voltage withstand capability are required. For example, it can be used in high-power adapters, chargers, and various power supply devices to provide efficient power conversion and stable power output. Its low on-resistance reduces the thermal load of the power system and ensures long-term efficient operation.
**6. High-power switching and inverters**
In **variable frequency drive (VFD)** systems, the high current carrying capacity and high voltage withstand of W26NM50-VB make it very suitable for motor control and speed regulation systems. It can provide fast and precise switching control, adapt to high-frequency conversion in industrial control systems, ensure efficient and stable motor operation, and is widely used in air conditioners, pumps, fans and other industrial equipment.
**7. High-power LED drive circuit**
W26NM50-VB is also suitable for high-power **LED drive circuit**. Its high voltage and high current carrying capacity, combined with low on-resistance, enable it to have lower power consumption and higher current efficiency in LED drive systems, and is suitable for high-power LED lighting systems that require stable current control.
**Summary**:
W26NM50-VB MOSFET is a single N-type MOSFET suitable for high voltage (500V), high current (40A) and high-efficiency applications. It is widely used in power electronics, inverters, power tools, electric vehicle battery management systems, solar power generation systems, switching power supplies and high-power LED drive circuits. Its low on-resistance, high current carrying capacity and efficient switching characteristics make it widely applicable in various high-power and high-voltage power conversion and control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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