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W25NM50N-VB Product details

Product introduction:

1. **Product Introduction:**

W25NM50N-VB is a single-channel N-channel MOSFET in TO247 package, designed for high-voltage applications. The maximum drain-source voltage (VDS) of this MOSFET is 500V, and the gate-source voltage (VGS) supports ±30V drive, which is suitable for power management and switching applications requiring high voltage and high current. The threshold voltage (Vth) of W25NM50N-VB is 3.8V, ensuring that it can be turned on at a lower gate voltage, thereby providing efficient switching performance. Its on-resistance (RDS(ON)) is 80mΩ (at VGS = 10V), which effectively reduces power loss while ensuring high current transmission. The maximum drain current (ID) of this MOSFET is 40A, which is suitable for applications that require high current and high voltage processing, and can provide reliable support for systems such as power converters, motor drives and battery management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 500V 3.8V 40A 80mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 500V 3.8V 40A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
2. **Detailed parameter description:**

- **Package:** TO247
- **Configuration:** Single-N-Channel
- **Maximum drain-source voltage (VDS):** 500V
- **Gate-source voltage (VGS):** ±30V
- **Threshold voltage (Vth):** 3.8V
- **On-resistance (RDS(ON)):** 80mΩ @ VGS = 10V
- **Maximum drain current (ID):** 40A
- **Technology:** SJ_Multi-EPI technology (Super Junction Multi-EPI technology)

Domain and module applications:

3. **Application fields and module examples:**

# 1. **Power conversion and switching power supply:**
W25NM50N-VB is suitable for power conversion systems with high voltage and high current requirements, especially switching power supply (SMPS) and power factor correction (PFC) modules. In high voltage power supply applications, its 500V VDS enables it to efficiently convert and regulate power, suitable for DC-DC converters, AC-DC power adapters and industrial power supplies.

# 6. **Power factor correction (PFC) circuit:**
In the power factor correction (PFC) circuit, W25NM50N-VB as a switching element can efficiently adjust the power factor of AC power and improve the stability and efficiency of the power supply. It is suitable for various power electronic equipment to ensure that the equipment operates in high efficiency and energy-saving mode.

# 7. **Automotive electronics:**
In the field of automotive electronics, W25NM50N-VB is suitable for high-voltage control modules in electric vehicles, hybrid vehicles and new energy vehicles, responsible for the charging and discharging of power batteries, power management, motor control and other aspects. Its high voltage (500V) and high current (40A) capabilities are very suitable for automotive power systems.

Summary:
W25NM50N-VB is a high-voltage, high-current N-channel MOSFET with low on-resistance, excellent switching performance and high voltage tolerance. It is suitable for a variety of high-power applications such as switching power supplies, battery management, motor control, LED driving, etc. Its 500V VDS and 40A ID make it an ideal choice for efficient power management and power conversion, especially for high-voltage and high-current industrial, automotive and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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