Product introduction：
W223-VB MOSFET Product Introduction
W223-VB is a high-performance single N-channel MOSFET in SOP8 package, designed for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is 30V, the gate-source voltage (VGS) can reach ±20V, and it has a low threshold voltage (Vth) of 1.7V, which can be turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 11mΩ at VGS=4.5V and drops to 8mΩ at VGS=10V, which provides excellent conduction performance and low power consumption for high current applications. The maximum drain current (ID) of W223-VB is 13A, which is suitable for applications such as power management, load switching, DC-DC conversion, etc. that require low loss and high efficiency. The use of Trench technology optimizes the conduction performance and switching characteristics, making it suitable for high-efficiency and high-frequency electronic products.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
W223-VB MOSFET Detailed parameter description
- **Package type**: SOP8
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 11mΩ@VGS=4.5V
- 8mΩ@VGS=10V
- **Maximum drain current (ID)**: 13A
- **Technology**: Trench technology optimizes switching loss and reduces on-resistance, suitable for high current and high frequency applications.
- **Application scenarios**: Suitable for low voltage and high efficiency applications such as power management, load switching, DC-DC converters, etc.
Domain and module applications：
W223-VB Applications and Modules
1. **Power Management System**
W223-VB is very suitable for low-voltage and high-efficiency applications in power management systems, especially in low-voltage DC-DC converters, power adapters, and regulated power supplies. The low on-resistance and high current carrying capacity of MOSFET enable it to provide extremely low power consumption and high efficiency in switching power supplies, ensuring the stability and reliability of the power system.
2. **Load Switch**
In load switch applications, W223-VB can provide high-efficiency switching control and is suitable for circuits with strict requirements on switching frequency and conduction loss. For example, in a battery management system, MOSFET as a load switch can effectively regulate the battery charging and discharging process, reduce switching losses, and improve battery efficiency.
3. **DC-DC Converter**
Due to its excellent conduction performance and low RDS(ON), W223-VB performs well in DC-DC converters. MOSFET can effectively reduce power loss and is suitable for medium and high frequency switching control circuits, such as buck converters and boost converters. It can be used in various portable devices, such as smart phones, tablets, etc., to provide stable voltage conversion and extend battery life.
4. **Consumer Electronics**
W223-VB is widely used in consumer electronics, especially in small power management modules. In products such as smart homes, portable devices, and power tools, the low on-resistance of MOSFET can effectively reduce energy loss and improve the efficiency of power supply, thereby extending the use time of the device and improving the overall performance of the system.
5. **LED Drive Circuit**
In LED lighting and drive circuits, W223-VB is suitable for controlling the switching of LEDs to ensure the stable flow of current. The low on-resistance and high drain current carrying capacity of MOSFET enable it to support stable operation in high-power LED applications, ensuring high efficiency and long life of LED lamps.
6. **Battery Management System (BMS)**
In the battery management system (BMS), W223-VB can be used to control the charging process and battery monitoring. Due to its low on-resistance and high current capability, this MOSFET can ensure efficiency during battery charging and reduce power loss during battery discharge, improving the overall efficiency and safety of the system.
In summary, W223-VB is suitable for power management, load switching, DC-DC converters, consumer electronics, battery management systems and other applications with its excellent on-resistance and low on-resistance. It is widely used in electronic systems that require high efficiency and low power consumption, especially under low voltage and high current working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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