Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
**
- **Package type**: SOP8
- **Configuration**: Bipolar N+N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**: 26mΩ @ VGS=4.5V; 22mΩ @ VGS=10V
- **Drain current (ID)**: 6.8A (high side); 6.0A (low side)
- **Technology**: Trench
- **Application scenarios**: Power management, DC-DC converter, battery management system, power conversion.
3. **
Domain and module applications：
**
W213-VB is suitable for low-power, high-efficiency power management systems, especially in DC-DC converters and battery management systems. Its bipolar N+N configuration makes it very suitable for use as a switching device in a switch mode power supply (SMPS), which can greatly reduce the conduction loss of the system and improve energy efficiency. In addition, in a battery charger, W213-VB can provide a smooth current output to ensure efficient charging of the battery. Due to its lower threshold voltage and on-resistance, this MOSFET is also suitable for smart battery management systems and low-power portable devices such as mobile phones, wearable devices and small appliances, helping to extend battery life and improve system stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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