中文
English
VSR090N10MS-VB Product details
Back to previous pageProduct introduction：
VSR090N10MS-VB MOSFET Product Introduction
VSR090N10MS-VB is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) in SOT89 package. It has a wide operating voltage range (VDS can withstand up to 100V) and is suitable for medium and high power switch control applications. This product is manufactured based on Trench technology and provides low RDS(ON) characteristics, which is particularly suitable for power electronic equipment that requires high efficiency and low switching losses.
VSR090N10MS-VB is a unipolar N-channel metal oxide semiconductor field effect transistor (MOSFET) in SOT89 package. It has a wide operating voltage range (VDS can withstand up to 100V) and is suitable for medium and high power switch control applications. This product is manufactured based on Trench technology and provides low RDS(ON) characteristics, which is particularly suitable for power electronic equipment that requires high efficiency and low switching losses.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | 102mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT89 | Single-N | 100V | 1.8V | 4.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT89 | Single-N |
VSR090N10MS-VB MOSFET detailed parameter description
- **Package**: SOT89
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.8V
- **On-Resistance (RDS(ON))**:
- 125mΩ @ VGS = 4.5V
- 102mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 4.2A
- **Technology**: Trench technology (high efficiency, low switching loss)
- **Package**: SOT89
- **Configuration**: Single-N-Channel
- **Drain-Source Voltage (VDS)**: 100V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 1.8V
- **On-Resistance (RDS(ON))**:
- 125mΩ @ VGS = 4.5V
- 102mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: 4.2A
- **Technology**: Trench technology (high efficiency, low switching loss)
Domain and module applications：
Application fields and modules of VSR090N10MS-VB MOSFET
1. **Power management system**
- **Application example**: VSR090N10MS-VB can be used in DC-DC converters as a switching element for efficient power conversion. Its low RDS(ON) value ensures small power loss and is suitable for efficient power management needs.
2. **Electric vehicles and hybrid electric vehicles (EV/HEV)**
- **Application example**: In the battery management system of electric vehicles, VSR090N10MS-VB MOSFET can be used as a switching device in the high-voltage battery management module to handle current control during battery charging and discharging. Its high voltage tolerance (100V) enables it to meet the needs of electric vehicle battery management.
3. **Motor drive system**
- **Application example**: In motor drives, VSR090N10MS-VB MOSFET can be used as a switching element of the driver to achieve high-efficiency current switching in motor control systems, thereby improving motor efficiency and reducing power loss.
4. **Industrial control**
- **Application example**: VSR090N10MS-VB is suitable for power switches in automation and industrial control systems, especially in situations where high switching speed and efficiency are required. It can be used in modules such as relays, sensor control, and load switches.
5. **Communication equipment**
- **Application example**: The application of VSR090N10MS-VB MOSFET in communication equipment includes high-frequency signal amplification and power supply regulation in switching power supplies. Its low on-resistance characteristics enable it to effectively reduce power loss and improve system efficiency, especially for communication products that require miniaturization and high reliability.
This MOSFET is widely used in various applications from power electronics to high-efficiency power systems due to its low RDS(ON), high voltage withstand and high-efficiency Trench technology.
1. **Power management system**
- **Application example**: VSR090N10MS-VB can be used in DC-DC converters as a switching element for efficient power conversion. Its low RDS(ON) value ensures small power loss and is suitable for efficient power management needs.
2. **Electric vehicles and hybrid electric vehicles (EV/HEV)**
- **Application example**: In the battery management system of electric vehicles, VSR090N10MS-VB MOSFET can be used as a switching device in the high-voltage battery management module to handle current control during battery charging and discharging. Its high voltage tolerance (100V) enables it to meet the needs of electric vehicle battery management.
3. **Motor drive system**
- **Application example**: In motor drives, VSR090N10MS-VB MOSFET can be used as a switching element of the driver to achieve high-efficiency current switching in motor control systems, thereby improving motor efficiency and reducing power loss.
4. **Industrial control**
- **Application example**: VSR090N10MS-VB is suitable for power switches in automation and industrial control systems, especially in situations where high switching speed and efficiency are required. It can be used in modules such as relays, sensor control, and load switches.
5. **Communication equipment**
- **Application example**: The application of VSR090N10MS-VB MOSFET in communication equipment includes high-frequency signal amplification and power supply regulation in switching power supplies. Its low on-resistance characteristics enable it to effectively reduce power loss and improve system efficiency, especially for communication products that require miniaturization and high reliability.
This MOSFET is widely used in various applications from power electronics to high-efficiency power systems due to its low RDS(ON), high voltage withstand and high-efficiency Trench technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
