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VSR080N08LS-VB Product details

Product introduction:

VSR080N08LS-VB MOSFET Product Introduction

VSR080N08LS-VB is a high-performance, low on-resistance (RDS(ON)) N-channel MOSFET in SOP8 package. This MOSFET has a drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of 20V, suitable for applications requiring high efficiency and low power consumption. This product uses Trench technology to provide extremely low on-resistance (RDS(ON)), 51mΩ at VGS=10V and 69mΩ at VGS=4.5V, enabling it to perform well in high switching frequencies and power conversion. Its maximum drain current (ID) is 6.8A, which can meet the needs of various small and medium power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 100V 1.8V 6.8A 51mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 100V 1.8V 6.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 100V 1.8V 6.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
VSR080N08LS-VB MOSFET Detailed parameter description

- **Package type**: SOP8
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- When VGS=4.5V, RDS(ON) = 69mΩ
- When VGS=10V, RDS(ON) = 51mΩ
- **Maximum drain current (ID)**: 6.8A
- **Technology**: Trench technology, which optimizes switching characteristics and conduction performance.
- **Application scenarios**: Suitable for switching power supplies, load switches, DC-DC converters, power tools and other low-power circuits.

Domain and module applications:

VSR080N08LS-VB Applications and Modules

1. **Power Management and Conversion**
VSR080N08LS-VB is widely used in the field of power management due to its low RDS(ON) and high switching efficiency. It can switch efficiently in DC-DC converters, thereby improving overall system efficiency. For example, in a 3.3V or 5V power module, this MOSFET can be used for buck or boost conversion, helping to reduce power consumption and improve system stability.

2. **Load Switch and Battery Management System**
Due to its excellent low on-resistance performance, this MOSFET is commonly used in load switch applications, especially in battery management systems (BMS), as a load switch to protect batteries from overcurrent and overvoltage damage. In addition, the low resistance and high efficiency of MOSFET also reduce heat loss and extend battery life during battery charging and discharging.

3. **Consumer Electronics**
In portable consumer electronics, the VSR080N08LS-VB is used for efficient power conversion and low-power switching circuits. For example, in the power management section of products such as smartphones, tablets, and laptops, MOSFETs are able to provide stable power output to ensure long battery life and efficient operation of the device.

4. **Automotive Electronic Systems**
This MOSFET can also be used in automotive electronic devices, especially in the power management systems of electric vehicles (EVs) and hybrid electric vehicles (HEVs). Its low RDS(ON) characteristics enable it to improve battery efficiency, reduce power losses, and improve the performance of energy recovery systems.

5. **Industrial Control Systems**
In the field of industrial automation, the VSR080N08LS-VB MOSFET is suitable for systems such as power drives, motor control, and switching power supplies. It is able to provide efficient power conversion and stable operating performance, and is widely used in PLC controllers, relay drives, and robotic systems.

In summary, the low on-resistance, high performance and high reliability of VSR080N08LS-VB make it widely used in various fields, especially in power management, consumer electronics, automotive electronics and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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