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VSM007N07MS-VB Product details
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Product Introduction: VSM007N07MS-VB
**VSM007N07MS-VB** is a **single N-channel MOSFET**, which adopts **TO263 package** and is designed for **high-efficiency power management and high-speed switching applications**. The **maximum drain-source voltage (VDS)** of this MOSFET is **80V**, the **maximum drain current (ID)** can reach **120A**, and it has an extremely low on-resistance (RDS(ON)). When **VGS=4.5V**, the on-resistance is **10mΩ**, and when **VGS=10V**, the on-resistance is reduced to **6mΩ**, which minimizes the loss of this MOSFET during the power conversion process and significantly improves the efficiency. Its **threshold voltage (Vth)** is **3V**, and it uses **Trench technology**, which enables it to handle high currents and is suitable for scenarios requiring high power and low loss. The low RDS(ON) characteristics of this MOSFET make it ideal for applications such as **DC-DC converters**, **electric vehicle charging management**, **power management systems**, etc.
**VSM007N07MS-VB** is a **single N-channel MOSFET**, which adopts **TO263 package** and is designed for **high-efficiency power management and high-speed switching applications**. The **maximum drain-source voltage (VDS)** of this MOSFET is **80V**, the **maximum drain current (ID)** can reach **120A**, and it has an extremely low on-resistance (RDS(ON)). When **VGS=4.5V**, the on-resistance is **10mΩ**, and when **VGS=10V**, the on-resistance is reduced to **6mΩ**, which minimizes the loss of this MOSFET during the power conversion process and significantly improves the efficiency. Its **threshold voltage (Vth)** is **3V**, and it uses **Trench technology**, which enables it to handle high currents and is suitable for scenarios requiring high power and low loss. The low RDS(ON) characteristics of this MOSFET make it ideal for applications such as **DC-DC converters**, **electric vehicle charging management**, **power management systems**, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
| **Parameter** | **Description** |
|------------------------|-----------------------------------------|
| **Package type** | TO263 |
| **Configuration** | Single N-channel MOSFET |
| **VDS (drain-source voltage)** | 80V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (threshold voltage)** | 3V |
| **RDS(ON) (on-resistance)** | 10mΩ (VGS=4.5V); 6mΩ (VGS=10V) |
| **ID (maximum drain current)** | 120A |
| **Technology** | Trench technology|
| **Parameter** | **Description** |
|------------------------|-----------------------------------------|
| **Package type** | TO263 |
| **Configuration** | Single N-channel MOSFET |
| **VDS (drain-source voltage)** | 80V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (threshold voltage)** | 3V |
| **RDS(ON) (on-resistance)** | 10mΩ (VGS=4.5V); 6mΩ (VGS=10V) |
| **ID (maximum drain current)** | 120A |
| **Technology** | Trench technology|
Domain and module applications：
Application fields and module examples:
1. **DC-DC converter**:
VSI007N07MS-VB can be used as a switching element in **DC-DC converter** to achieve high-efficiency voltage conversion. Its **low RDS(ON)** and **high current carrying capacity** can significantly reduce power loss during the conversion process, especially in **high-efficiency power management systems**, which can ensure that the regulator works with low heat loss, thereby improving the overall efficiency of the system and extending the service life of the equipment.
2. **Electric vehicle charging system**:
In **Electric vehicle (EV) charging management systems**, VSM007N07MS-VB provides efficient current switching capabilities for **charger design**, effectively matching the DC voltage of the battery with the current demand of the charging device. Due to its high current capacity (120A) and low on-resistance, it can minimize energy loss and heat generation, ensuring the stability and efficiency of the charging system.
3. **Server Power Supply Unit (PSU)**:
VSM007N07MS-VB is also used in **Server Power Supply Unit (PSU)**. In **high-power server systems**, large currents need to be handled and efficiently converted. VSM007N07MS-VB as a MOSFET can ensure efficient power conversion and current regulation. Low RDS(ON) and high current handling capacity can effectively reduce power losses, especially suitable for occasions that require stable operation under high loads.
4. **Uninterruptible Power Supply (UPS) System**:
VSM007N07MS-VB is suitable for **UPS systems** to ensure stable backup power supply in the event of power failure. Its high efficiency, low on-resistance and high current handling capacity enable this MOSFET to provide low losses during power conversion, ensuring that the UPS system can start quickly and efficiently in an emergency state, extending battery life.
5. **Power management for consumer electronics devices**:
The high performance characteristics of VSM007N07MS-VB make it an ideal choice for power management modules in **consumer electronics**, such as **smartphones, laptops, etc.** It can effectively handle various power requirements in the device, reduce energy loss, and improve system performance. It is especially suitable for efficient power management and long-term use of **battery-powered devices**.
6. **LED driver power supply**:
VSM007N07MS-VB can be used in **LED driver power supply**, especially in **high-power LED lighting systems**, MOSFET can provide efficient and stable power conversion, ensuring stable current output and good temperature control. Low on-resistance ensures higher driving efficiency, especially suitable for **high-performance lighting products**.
7. **High-efficiency power adapter**:
In the design of **power adapter**, VSM007N07MS-VB can provide efficient voltage conversion and reduce energy loss. It is particularly suitable for applications that require **high-speed switching** and **high-efficiency power conversion**, such as **power tools, household appliances, mobile power supplies, etc.**.
1. **DC-DC converter**:
VSI007N07MS-VB can be used as a switching element in **DC-DC converter** to achieve high-efficiency voltage conversion. Its **low RDS(ON)** and **high current carrying capacity** can significantly reduce power loss during the conversion process, especially in **high-efficiency power management systems**, which can ensure that the regulator works with low heat loss, thereby improving the overall efficiency of the system and extending the service life of the equipment.
2. **Electric vehicle charging system**:
In **Electric vehicle (EV) charging management systems**, VSM007N07MS-VB provides efficient current switching capabilities for **charger design**, effectively matching the DC voltage of the battery with the current demand of the charging device. Due to its high current capacity (120A) and low on-resistance, it can minimize energy loss and heat generation, ensuring the stability and efficiency of the charging system.
3. **Server Power Supply Unit (PSU)**:
VSM007N07MS-VB is also used in **Server Power Supply Unit (PSU)**. In **high-power server systems**, large currents need to be handled and efficiently converted. VSM007N07MS-VB as a MOSFET can ensure efficient power conversion and current regulation. Low RDS(ON) and high current handling capacity can effectively reduce power losses, especially suitable for occasions that require stable operation under high loads.
4. **Uninterruptible Power Supply (UPS) System**:
VSM007N07MS-VB is suitable for **UPS systems** to ensure stable backup power supply in the event of power failure. Its high efficiency, low on-resistance and high current handling capacity enable this MOSFET to provide low losses during power conversion, ensuring that the UPS system can start quickly and efficiently in an emergency state, extending battery life.
5. **Power management for consumer electronics devices**:
The high performance characteristics of VSM007N07MS-VB make it an ideal choice for power management modules in **consumer electronics**, such as **smartphones, laptops, etc.** It can effectively handle various power requirements in the device, reduce energy loss, and improve system performance. It is especially suitable for efficient power management and long-term use of **battery-powered devices**.
6. **LED driver power supply**:
VSM007N07MS-VB can be used in **LED driver power supply**, especially in **high-power LED lighting systems**, MOSFET can provide efficient and stable power conversion, ensuring stable current output and good temperature control. Low on-resistance ensures higher driving efficiency, especially suitable for **high-performance lighting products**.
7. **High-efficiency power adapter**:
In the design of **power adapter**, VSM007N07MS-VB can provide efficient voltage conversion and reduce energy loss. It is particularly suitable for applications that require **high-speed switching** and **high-efficiency power conversion**, such as **power tools, household appliances, mobile power supplies, etc.**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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