Product introduction:
VSL080N06MS-VB MOSFET Product Introduction
**VSL080N06MS-VB** is a single N-channel MOSFET in a compact SOT23-3 package, designed for low-power, high-efficiency power management, load switching and signal switching applications. The MOSFET has a maximum drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 5.5A, providing a low on-resistance (RDS(ON)) of 33mΩ at VGS=4.5V and 30mΩ at VGS=10V. The VSL080N06MS-VB uses Trench technology, has low on-resistance and fast switching characteristics, and is very suitable for miniaturized circuit designs that require high performance and low power consumption, especially for mobile phones, portable devices, battery management and other fields.
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Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N |
60V |
20(±V) |
1.7V |
5.5A |
|
|
30mΩ |
|
VSL080N06MS-VB MOSFET Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.7V
- **RDS(ON) (on-resistance)**:
- 33mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **ID (maximum drain current)**: 5.5A
- **Technology type**: Trench (slot technology)
Domain and module applications:
VSL080N06MS-VB MOSFET Applications and Modules
**1. Portable Electronic Devices**
Due to the low on-resistance and compact SOT23-3 package of VSL080N06MS-VB, it is particularly suitable for power management systems in portable electronic devices such as smartphones, tablets, and other handheld devices. The low RDS(ON) characteristics ensure high efficiency in these devices in charging, discharging, and standby modes, extending battery life.
**2. Battery Management System**
This MOSFET is widely used in battery management systems, especially for battery charging, protection, and battery discharge control. VSL080N06MS-VB can effectively manage charging and discharging currents, reduce heat loss in battery management modules, improve battery efficiency, and protect batteries from overcurrent damage.
**3. Low-power Switching Power Supply**
The low on-resistance of VSL080N06MS-VB makes it suitable for low-power switching power supply (SMPS) designs. In the process of efficient power conversion, it can provide extremely low energy loss and improve the overall efficiency of the power supply. It is widely used in low-power power modules, USB power adapters, DC-DC converters, etc.
**4. Wireless communication module**
In wireless communication systems, such as Bluetooth, Wi-Fi modules, etc., VSL080N06MS-VB can be used as a high-efficiency switching element for signal switching and power management. Due to its fast switching speed and low on-resistance, it can improve signal transmission efficiency and reduce power consumption, and is suitable for high-frequency switching and power control in communication equipment.
**5. Smart home and IoT devices**
In smart home and IoT (IoT) devices, VSL080N06MS-VB is often used in low-power battery-powered devices, such as smart sensors, lighting control modules, etc. Due to its small package and low power consumption characteristics, it is very suitable for battery-powered smart devices, which can reduce power consumption while ensuring reliable switching control and long-term stable operation.
**6. Load Switching and Load Protection**
VSL080N06MS-VB can also be widely used in load switching and protection circuits, especially in applications that require small, low-power and reliable switching elements. By controlling the switching of power, this MOSFET can play an important role in load protection and power switching, such as in power management systems such as USB-powered devices and battery chargers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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