中文
English
VSI080P06MS-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**VSI080P06MS-VB** is a high-efficiency single P-Channel MOSFET in TO251 package, designed for low power consumption, high efficiency power management, switching applications and current control. The maximum drain voltage (V_DS) of this MOSFET is -60V, and the maximum drain current (I_D) is -25A, which is suitable for occasions requiring efficient current switching, low loss and stable performance. Its threshold voltage (V_th) is -1.7V, and the on-resistance (R_DS(ON)) is 62mΩ@V_GS=4.5V and 53mΩ@V_GS=10V, with low switching loss and excellent conduction characteristics. VSI080P06MS-VB adopts advanced Trench technology to ensure its stable operation in high current and high voltage environments, which can effectively reduce the energy loss of the system and improve work efficiency.
**VSI080P06MS-VB** is a high-efficiency single P-Channel MOSFET in TO251 package, designed for low power consumption, high efficiency power management, switching applications and current control. The maximum drain voltage (V_DS) of this MOSFET is -60V, and the maximum drain current (I_D) is -25A, which is suitable for occasions requiring efficient current switching, low loss and stable performance. Its threshold voltage (V_th) is -1.7V, and the on-resistance (R_DS(ON)) is 62mΩ@V_GS=4.5V and 53mΩ@V_GS=10V, with low switching loss and excellent conduction characteristics. VSI080P06MS-VB adopts advanced Trench technology to ensure its stable operation in high current and high voltage environments, which can effectively reduce the energy loss of the system and improve work efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -25A | 53mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -25A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -60V | -1.7V | -25A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single P-Channel
- **Maximum drain voltage (V_DS)**: -60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 62mΩ @ V_GS = 4.5V
- 53mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -25A
- **Technology**: Trench
- **Power loss**: VSI080P06MS-VB has a lower on-resistance and has less power loss, thereby improving the overall efficiency of the system.
- **Operating temperature range**: Able to operate stably in a wide temperature range and have strong heat resistance.
- **Thermal management**: The low on-resistance of this MOSFET enables it to maintain low heat generation when operating at high current, thereby providing better thermal management performance.
- **Package type**: TO251
- **Configuration**: Single P-Channel
- **Maximum drain voltage (V_DS)**: -60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 62mΩ @ V_GS = 4.5V
- 53mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -25A
- **Technology**: Trench
- **Power loss**: VSI080P06MS-VB has a lower on-resistance and has less power loss, thereby improving the overall efficiency of the system.
- **Operating temperature range**: Able to operate stably in a wide temperature range and have strong heat resistance.
- **Thermal management**: The low on-resistance of this MOSFET enables it to maintain low heat generation when operating at high current, thereby providing better thermal management performance.
Domain and module applications：
Applications and modules
**1. Power management and battery management system (BMS) **
VSI080P06MS-VB is suitable for battery management system (BMS) and power management system (PMS). In these systems, MOSFET as a switching element can realize battery charge and discharge control. Due to the low on-resistance and high current carrying capacity of this MOSFET, it can effectively reduce power loss, improve battery efficiency and extend battery life. It is suitable for battery management applications in electric vehicles, power tools and portable devices.
**2. Electric vehicles and power control **
Electric vehicles (EV) and hybrid electric vehicles (HEV) require efficient power conversion systems to manage battery energy and drive motors. As a power control MOSFET, VSI080P06MS-VB can provide reliable current switching under high load and high current to ensure the efficient operation of the electric vehicle power system. In addition, in the battery charge and discharge control of electric vehicles, MOSFET can also control the flow of current and optimize the battery charging process.
**3. High-efficiency power switching and power conversion**
This MOSFET is widely used in high-power power switching applications such as DC-DC converters and AC-DC power converters. Its low on-resistance characteristic makes it have low losses when current flows through it, thus providing high-efficiency energy conversion in power management modules. It is suitable for high-power electronic equipment, computer power supplies, power conversion devices, and various industrial power systems.
**4. LED driving and intelligent lighting**
VSI080P06MS-VB plays an important role in LED driving and intelligent lighting applications. Due to its low on-resistance and high current carrying capacity, VSI080P06MS-VB can efficiently drive LEDs, maintain stable current and brightness, while reducing power losses. In addition, MOSFET is widely used in dimming control and lamp driving circuits, which helps to improve the working efficiency and reliability of the overall system.
**5. Motor drive and industrial automation**
In motor drive and industrial automation control systems, VSI080P06MS-VB can provide efficient and reliable current switching to control the start, stop and speed regulation of the motor. The low switching loss characteristics of MOSFET make it suitable for the drive circuit of high-power motors and the power conversion module in the automation control system. It helps to improve the efficiency of motor control systems, reduce energy loss and extend the life of motors.
**6. Wireless communication and radio frequency (RF) applications**
VSI080P06MS-VB is also suitable for power management and switch control in wireless communication systems and RF applications. It can be used in power amplifiers, power distribution networks, etc. to provide efficient switch control, reduce power loss, and thus improve the performance and stability of wireless communication systems. Especially in mobile communications, base station power systems and other RF applications, the high efficiency and high load capacity of this MOSFET have significant advantages.
**1. Power management and battery management system (BMS) **
VSI080P06MS-VB is suitable for battery management system (BMS) and power management system (PMS). In these systems, MOSFET as a switching element can realize battery charge and discharge control. Due to the low on-resistance and high current carrying capacity of this MOSFET, it can effectively reduce power loss, improve battery efficiency and extend battery life. It is suitable for battery management applications in electric vehicles, power tools and portable devices.
**2. Electric vehicles and power control **
Electric vehicles (EV) and hybrid electric vehicles (HEV) require efficient power conversion systems to manage battery energy and drive motors. As a power control MOSFET, VSI080P06MS-VB can provide reliable current switching under high load and high current to ensure the efficient operation of the electric vehicle power system. In addition, in the battery charge and discharge control of electric vehicles, MOSFET can also control the flow of current and optimize the battery charging process.
**3. High-efficiency power switching and power conversion**
This MOSFET is widely used in high-power power switching applications such as DC-DC converters and AC-DC power converters. Its low on-resistance characteristic makes it have low losses when current flows through it, thus providing high-efficiency energy conversion in power management modules. It is suitable for high-power electronic equipment, computer power supplies, power conversion devices, and various industrial power systems.
**4. LED driving and intelligent lighting**
VSI080P06MS-VB plays an important role in LED driving and intelligent lighting applications. Due to its low on-resistance and high current carrying capacity, VSI080P06MS-VB can efficiently drive LEDs, maintain stable current and brightness, while reducing power losses. In addition, MOSFET is widely used in dimming control and lamp driving circuits, which helps to improve the working efficiency and reliability of the overall system.
**5. Motor drive and industrial automation**
In motor drive and industrial automation control systems, VSI080P06MS-VB can provide efficient and reliable current switching to control the start, stop and speed regulation of the motor. The low switching loss characteristics of MOSFET make it suitable for the drive circuit of high-power motors and the power conversion module in the automation control system. It helps to improve the efficiency of motor control systems, reduce energy loss and extend the life of motors.
**6. Wireless communication and radio frequency (RF) applications**
VSI080P06MS-VB is also suitable for power management and switch control in wireless communication systems and RF applications. It can be used in power amplifiers, power distribution networks, etc. to provide efficient switch control, reduce power loss, and thus improve the performance and stability of wireless communication systems. Especially in mobile communications, base station power systems and other RF applications, the high efficiency and high load capacity of this MOSFET have significant advantages.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
