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VSI013N10MS-VB Product details
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1. **VSI013N10MS-VB Product Introduction**
VSI013N10MS-VB is a high-performance N-channel MOSFET in TO251 package, designed for high voltage, low on-resistance, high efficiency power switch applications. With a drain-source voltage (V_DS) of 100V, it can withstand higher voltages, making it suitable for systems such as power converters, battery management and motor drives that require high voltage carrying capacity. The gate-source voltage (V_GS) of VSI013N10MS-VB is ±20V, and the gate-source threshold voltage (V_th) is 1.8V, supporting low gate drive voltage startup.
The MOSFET has an on-resistance (R_DS(on)) of 12.5mΩ when the gate-source voltage (V_GS) is 10V, showing very low conduction losses, making it highly efficient in high current applications. The maximum drain current (I_D) is 65A, which can provide stable high current support and is suitable for high current power conversion and drive applications.
VSI013N10MS-VB adopts Trench technology, which makes it have fast switching characteristics and low switching losses, suitable for high frequency and high efficiency power electronic equipment.
VSI013N10MS-VB is a high-performance N-channel MOSFET in TO251 package, designed for high voltage, low on-resistance, high efficiency power switch applications. With a drain-source voltage (V_DS) of 100V, it can withstand higher voltages, making it suitable for systems such as power converters, battery management and motor drives that require high voltage carrying capacity. The gate-source voltage (V_GS) of VSI013N10MS-VB is ±20V, and the gate-source threshold voltage (V_th) is 1.8V, supporting low gate drive voltage startup.
The MOSFET has an on-resistance (R_DS(on)) of 12.5mΩ when the gate-source voltage (V_GS) is 10V, showing very low conduction losses, making it highly efficient in high current applications. The maximum drain current (I_D) is 65A, which can provide stable high current support and is suitable for high current power conversion and drive applications.
VSI013N10MS-VB adopts Trench technology, which makes it have fast switching characteristics and low switching losses, suitable for high frequency and high efficiency power electronic equipment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | 12.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 100V | 1.8V | 65A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. **VSI013N10MS-VB Detailed Parameters**
- **Package Type**: TO251
- **Configuration**: Single-ended N-Channel MOSFET
- **Drain-Source Voltage (V_DS)**: 100V (Maximum Rating)
- **Gate-Source Voltage (V_GS)**: ±20V (Maximum Rating)
- **Gate-Source Threshold Voltage (V_th)**: 1.8V (Typical)
- **On-Resistance (R_DS(on))**:
- At V_GS = 10V: 12.5mΩ
- **Maximum Drain Current (I_D)**: 65A
- **Maximum Power Dissipation**: 200W
- **Operating Temperature Range**: -55°C to +150°C
- **Technology**: Trench Technology
- **Switching Characteristics**: Excellent switching speed for high frequency, high performance applications
- **Current Drive Capability**: Up to 65A leakage current support for high power applications
- **Package Type**: TO251
- **Configuration**: Single-ended N-Channel MOSFET
- **Drain-Source Voltage (V_DS)**: 100V (Maximum Rating)
- **Gate-Source Voltage (V_GS)**: ±20V (Maximum Rating)
- **Gate-Source Threshold Voltage (V_th)**: 1.8V (Typical)
- **On-Resistance (R_DS(on))**:
- At V_GS = 10V: 12.5mΩ
- **Maximum Drain Current (I_D)**: 65A
- **Maximum Power Dissipation**: 200W
- **Operating Temperature Range**: -55°C to +150°C
- **Technology**: Trench Technology
- **Switching Characteristics**: Excellent switching speed for high frequency, high performance applications
- **Current Drive Capability**: Up to 65A leakage current support for high power applications
Domain and module applications：
3. **Application fields and module examples**
- **DC-DC power converter**: VSI013N10MS-VB is particularly suitable for low voltage and high current DC-DC power converters. Due to its low on-resistance, it is able to reduce energy loss and improve conversion efficiency under high load conditions. It is widely used in high-efficiency power modules, especially in power management systems for data centers, electric vehicle charging systems, communication equipment and portable electronic devices.
- **Motor drive system**: In motor control systems, especially applications that require high current output (such as power tools, household appliances, robots, etc.), VSI013N10MS-VB is able to provide efficient current switching and motor drive control due to its high current carrying capacity and low on-resistance. It helps to optimize the performance of the motor and improve the efficiency of the overall drive system.
- **Battery Management System (BMS)**: The low on-resistance and high current support of VSI013N10MS-VB make it an ideal choice for battery management systems, especially in electric vehicles (EV) and energy storage systems. It can be used for efficient battery charge and discharge management, improving system performance and extending battery life.
- **LED driver power supply**: In high-power LED lighting systems, VSI013N10MS-VB can be used to provide efficient current conversion, reduce power loss, and improve the overall energy efficiency of the lighting system. Its low on-resistance and fast switching characteristics enable it to perform well in high-frequency, high-efficiency LED driver applications, and is widely used in commercial lighting, automotive lighting, and stage lighting.
- **Portable electronic device power module**: Due to its low on-resistance and high current carrying capacity, VSI013N10MS-VB can be used in power modules for portable devices such as smartphones, tablets, portable chargers, etc., to provide efficient battery power conversion.
- **Power Amplifier Power Supply**: In wireless communications and high-frequency power amplifier power supply, VSI013N10MS-VB can ensure fast switching and efficient energy transfer, reduce power loss, and is suitable for wireless power systems that require efficient power supply and precise control due to its low R_DS(on) and high current drive capability.
- **DC-DC power converter**: VSI013N10MS-VB is particularly suitable for low voltage and high current DC-DC power converters. Due to its low on-resistance, it is able to reduce energy loss and improve conversion efficiency under high load conditions. It is widely used in high-efficiency power modules, especially in power management systems for data centers, electric vehicle charging systems, communication equipment and portable electronic devices.
- **Motor drive system**: In motor control systems, especially applications that require high current output (such as power tools, household appliances, robots, etc.), VSI013N10MS-VB is able to provide efficient current switching and motor drive control due to its high current carrying capacity and low on-resistance. It helps to optimize the performance of the motor and improve the efficiency of the overall drive system.
- **Battery Management System (BMS)**: The low on-resistance and high current support of VSI013N10MS-VB make it an ideal choice for battery management systems, especially in electric vehicles (EV) and energy storage systems. It can be used for efficient battery charge and discharge management, improving system performance and extending battery life.
- **LED driver power supply**: In high-power LED lighting systems, VSI013N10MS-VB can be used to provide efficient current conversion, reduce power loss, and improve the overall energy efficiency of the lighting system. Its low on-resistance and fast switching characteristics enable it to perform well in high-frequency, high-efficiency LED driver applications, and is widely used in commercial lighting, automotive lighting, and stage lighting.
- **Portable electronic device power module**: Due to its low on-resistance and high current carrying capacity, VSI013N10MS-VB can be used in power modules for portable devices such as smartphones, tablets, portable chargers, etc., to provide efficient battery power conversion.
- **Power Amplifier Power Supply**: In wireless communications and high-frequency power amplifier power supply, VSI013N10MS-VB can ensure fast switching and efficient energy transfer, reduce power loss, and is suitable for wireless power systems that require efficient power supply and precise control due to its low R_DS(on) and high current drive capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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