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VSI003N06HS-VB Product details
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Product Introduction
**VSI003N06HS-VB** is a high-efficiency single N-Channel MOSFET in TO251 package, designed for medium and high power power management, switching applications and high-efficiency current conversion. The maximum drain voltage (V_DS) of this MOSFET is 60V and the maximum drain current (I_D) is 97A, which is suitable for applications requiring high current, high voltage tolerance and low power loss. Its threshold voltage (V_th) is 2.5V, and the on-resistance (R_DS(ON)) is 6mΩ@V_GS=4.5V, 5mΩ@V_GS=10V, with excellent conduction characteristics and low switching losses. VSI003N06HS-VB uses advanced Trench technology to ensure its high efficiency and reliability under high current and high voltage conditions.
**VSI003N06HS-VB** is a high-efficiency single N-Channel MOSFET in TO251 package, designed for medium and high power power management, switching applications and high-efficiency current conversion. The maximum drain voltage (V_DS) of this MOSFET is 60V and the maximum drain current (I_D) is 97A, which is suitable for applications requiring high current, high voltage tolerance and low power loss. Its threshold voltage (V_th) is 2.5V, and the on-resistance (R_DS(ON)) is 6mΩ@V_GS=4.5V, 5mΩ@V_GS=10V, with excellent conduction characteristics and low switching losses. VSI003N06HS-VB uses advanced Trench technology to ensure its high efficiency and reliability under high current and high voltage conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 2.5V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single N-Channel
- **Maximum drain voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(ON))**:
- 6mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 97A
- **Technology**: Trench
- **Power loss**: This MOSFET has an extremely low on-resistance (R_DS(ON)), so it can effectively reduce power loss and improve system efficiency.
- **Operating temperature range**: Widely applicable to a variety of environments, with strong heat resistance.
- **Thermal Management**: Due to the use of Trench technology, it has lower on-resistance and excellent thermal conductivity, which can effectively prevent heat accumulation and ensure efficient operation.
- **Package type**: TO251
- **Configuration**: Single N-Channel
- **Maximum drain voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(ON))**:
- 6mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 97A
- **Technology**: Trench
- **Power loss**: This MOSFET has an extremely low on-resistance (R_DS(ON)), so it can effectively reduce power loss and improve system efficiency.
- **Operating temperature range**: Widely applicable to a variety of environments, with strong heat resistance.
- **Thermal Management**: Due to the use of Trench technology, it has lower on-resistance and excellent thermal conductivity, which can effectively prevent heat accumulation and ensure efficient operation.
Domain and module applications：
Application fields and modules
**1. Power management and power conversion**
VSI003N06HS-VB is suitable for various power management systems, especially high current DC-DC converters, step-up and step-down converters, etc. The low on-resistance and high current carrying capacity of MOSFET enable it to reduce losses during power conversion and improve overall conversion efficiency. In situations where high-efficiency power transmission is required, such as data centers, server power supplies, and communication power systems, VSI003N06HS-VB can effectively improve system performance.
**2. Electric vehicles and battery management systems (BMS)**
Due to the high requirements for current control in electric vehicles and battery management systems, VSI003N06HS-VB plays an important role in these applications. Its high current carrying capacity and low on-resistance are very suitable for battery charge and discharge management, battery protection, and power conversion modules in electric vehicles. This MOSFET can improve the efficiency of battery management systems and optimize the battery charging and discharging process, thereby extending battery life and improving the overall energy efficiency of electric vehicles.
**3. High-power switch and load switching**
VSI003N06HS-VB is suitable for use as a high-power switch in industrial applications, including motor drives, automation control systems, and other high-power load switching applications. It can reliably switch quickly under high voltage and high current loads to ensure stable operation of the load system. The excellent conductivity and low switching loss of MOSFET reduce the energy loss during switching when the load is switched, improving the system response speed and efficiency.
**4. LED drive and smart lighting**
LED drive circuits usually require high-efficiency power switch control to stabilize the power supply. VSI003N06HS-VB can provide reliable switching control in such applications. Due to its low on-resistance, MOSFET can stably drive LEDs with low power loss and is widely used in smart lighting, backlights, and other high-efficiency lighting systems. In smart lighting, MOSFET can provide efficient power conversion and stable current control.
**5. Wireless communication and radio frequency (RF) applications**
VSI003N06HS-VB can also be used in power amplifiers and power management modules in wireless communication equipment and RF systems. Its low on-resistance and excellent thermal management characteristics enable it to operate stably in these applications, reduce power loss and signal interference, and improve system performance.
**6. Power tools and household appliances**
This MOSFET is also widely used in power tools and high-power household appliances, such as electric screwdrivers, vacuum cleaners, air purifiers, etc. It can withstand higher currents to ensure the stable operation of power tools under high loads, and its efficient switching characteristics help improve system efficiency and extend battery life.
**1. Power management and power conversion**
VSI003N06HS-VB is suitable for various power management systems, especially high current DC-DC converters, step-up and step-down converters, etc. The low on-resistance and high current carrying capacity of MOSFET enable it to reduce losses during power conversion and improve overall conversion efficiency. In situations where high-efficiency power transmission is required, such as data centers, server power supplies, and communication power systems, VSI003N06HS-VB can effectively improve system performance.
**2. Electric vehicles and battery management systems (BMS)**
Due to the high requirements for current control in electric vehicles and battery management systems, VSI003N06HS-VB plays an important role in these applications. Its high current carrying capacity and low on-resistance are very suitable for battery charge and discharge management, battery protection, and power conversion modules in electric vehicles. This MOSFET can improve the efficiency of battery management systems and optimize the battery charging and discharging process, thereby extending battery life and improving the overall energy efficiency of electric vehicles.
**3. High-power switch and load switching**
VSI003N06HS-VB is suitable for use as a high-power switch in industrial applications, including motor drives, automation control systems, and other high-power load switching applications. It can reliably switch quickly under high voltage and high current loads to ensure stable operation of the load system. The excellent conductivity and low switching loss of MOSFET reduce the energy loss during switching when the load is switched, improving the system response speed and efficiency.
**4. LED drive and smart lighting**
LED drive circuits usually require high-efficiency power switch control to stabilize the power supply. VSI003N06HS-VB can provide reliable switching control in such applications. Due to its low on-resistance, MOSFET can stably drive LEDs with low power loss and is widely used in smart lighting, backlights, and other high-efficiency lighting systems. In smart lighting, MOSFET can provide efficient power conversion and stable current control.
**5. Wireless communication and radio frequency (RF) applications**
VSI003N06HS-VB can also be used in power amplifiers and power management modules in wireless communication equipment and RF systems. Its low on-resistance and excellent thermal management characteristics enable it to operate stably in these applications, reduce power loss and signal interference, and improve system performance.
**6. Power tools and household appliances**
This MOSFET is also widely used in power tools and high-power household appliances, such as electric screwdrivers, vacuum cleaners, air purifiers, etc. It can withstand higher currents to ensure the stable operation of power tools under high loads, and its efficient switching characteristics help improve system efficiency and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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