Featured Model

VSD260P10MS-VB Product details

Product introduction:

VSD260P10MS-VB Product Introduction

VSD260P10MS-VB is a high-performance P-type MOSFET in TO252 package with a maximum drain-source voltage (VDS) of 100V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of this MOSFET is -2V, and it has excellent on-resistance performance, with RDS(ON) of 280mΩ at VGS=4.5V and RDS(ON) of 250mΩ at VGS=10V. The use of Trench technology gives it low conduction loss and good switching characteristics, making it suitable for applications that require high current and low power consumption. VSD260P10MS-VB is mainly used in battery management, motor drive, power converters, industrial automation and other high-power switching applications.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -100V -2V -8.8A 250mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -100V -2V -8.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -100V -2V -8.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
VSD260P10MS-VB Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single P-type MOSFET (Single-P-Channel)
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 280mΩ @ VGS = 4.5V
- 250mΩ @ VGS = 10V
- **Rated drain current (ID)**: -8.8A
- **Maximum power dissipation (Ptot)**: According to the thermal design, it needs to be calculated in the application
- **Technology**: Trench
- **Operating temperature range**: -55°C To +150°C (depending on heat dissipation design)

Domain and module applications:

Applicable fields and modules

1. **Battery Management System (BMS)**
VSD260P10MS-VB is widely used in battery management systems (BMS), especially in high-voltage battery packs, as a switching element to control the charging and discharging of batteries. It can provide stable power conversion in battery management systems and ensure efficient battery protection functions. In electric vehicles (EV), solar systems, power storage and other fields, this MOSFET can efficiently control the flow of battery current, thereby improving the overall efficiency and reliability of the system.

2. **Motor Drive**
VSD260P10MS-VB is suitable for motor drive systems, especially in high-voltage motor control systems. In inverters and servo drives, this MOSFET can efficiently control the switching of motors, reduce power losses and improve system efficiency. Motor drive systems, such as power tools, electric vehicles, electric bicycles, etc., are ideal application scenarios for this MOSFET.

3. **DC-DC Converters**
Due to its low on-resistance and high current carrying capacity, the VSD260P10MS-VB is suitable for use in high-efficiency DC-DC converters, especially in power modules that require high power conversion. This MOSFET can provide stable switching control in power management modules and effectively reduce power losses, and is suitable for solar inverters, electric vehicles, industrial power supplies, etc.

4. **Industrial Automation and Power Control**
In the field of industrial automation and power control, the VSD260P10MS-VB can be used as a switching element for power regulation, especially in motor drives, inverters, and power conversion applications. Its high current carrying capacity and low on-resistance characteristics make it an ideal power control element in industrial automation equipment, which can effectively improve the overall working efficiency of the system.

5. **Power Amplifier**
The VSD260P10MS-VB can also be used in high-power applications such as power amplifiers, especially in situations where higher power needs to be controlled. Due to its low on-resistance and high current carrying capacity, this MOSFET can maintain low power loss during the process of efficiently amplifying current, and is widely used in audio systems, communication equipment, and other high-power amplifier systems.

6. **Inverters and High-Efficiency Power Modules**
As a P-type MOSFET, the VSD260P10MS-VB can be used for efficient switching in solar inverters and other power modules. Especially in the power conversion process, it can reduce switching losses and provide higher conversion efficiency. Its high current carrying capacity makes it valuable in high-power inverters, battery chargers, and other high-power power supply applications.

7. **Electric Transportation**
In electric transportation vehicles such as electric vehicles (EVs), electric motorcycles, and electric scooters, the VSD260P10MS-VB can be used in battery management, drive systems, and power control modules. Due to its high current carrying capacity and low on-resistance, it can effectively manage battery charging, power scheduling, and motor control systems in electric transportation vehicles.

8. **Communication Equipment**
VSD260P10MS-VB can also be used for power conversion and power conditioning systems in communication equipment. It can support efficient power management, especially in radio communication equipment and data centers that require stable power supply and efficient current control, providing more efficient power conversion solutions.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat