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VSD080P06MS-VB Product details
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1. **VSD080P06MS-VB Product Introduction**
VSD080P06MS-VB is a high-performance P-channel MOSFET in TO252 package, designed for medium and high voltage applications. Its drain-source voltage (V_DS) is -60V, suitable for power electronic systems requiring negative voltage control. The gate-source voltage (V_GS) of this MOSFET is up to ±20V, ensuring stable operation under various control signals. The gate-source threshold voltage (V_th) is -1.7V, ensuring good switching characteristics and fast response to control signals. The on-resistance (R_DS(on)) of this MOSFET is 58mΩ at V_GS = 4.5V and 46mΩ at V_GS = 10V, with low conduction loss and high efficiency. In applications with heavy loads, the VSD080P06MS-VB can carry up to -35A of leakage current, demonstrating excellent current transfer capability and is suitable for a variety of high-efficiency power and drive applications.
VSD080P06MS-VB is a high-performance P-channel MOSFET in TO252 package, designed for medium and high voltage applications. Its drain-source voltage (V_DS) is -60V, suitable for power electronic systems requiring negative voltage control. The gate-source voltage (V_GS) of this MOSFET is up to ±20V, ensuring stable operation under various control signals. The gate-source threshold voltage (V_th) is -1.7V, ensuring good switching characteristics and fast response to control signals. The on-resistance (R_DS(on)) of this MOSFET is 58mΩ at V_GS = 4.5V and 46mΩ at V_GS = 10V, with low conduction loss and high efficiency. In applications with heavy loads, the VSD080P06MS-VB can carry up to -35A of leakage current, demonstrating excellent current transfer capability and is suitable for a variety of high-efficiency power and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | 46mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. **VSD080P06MS-VB detailed parameter description**
- **Package type**: TO252
- **Configuration**: Single-ended P-channel MOSFET (Single P-Channel)
- **Drain-source voltage (V_DS)**: -60V (maximum rating)
- **Gate-source voltage (V_GS)**: ±20V (maximum rating)
- **Gate-source threshold voltage (V_th)**: -1.7V (typical value)
- **R_DS(on) (at V_GS = 10V)**: 46mΩ (on-resistance)
- **R_DS(on) (at V_GS = 4.5V)**: 58mΩ (on-resistance)
- **Drain current (I_D)**: -35A (maximum rating)
- **Maximum power dissipation**: 150W (typical)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Switching performance**: Excellent switching speed, low on-resistance, suitable for high frequency and high current applications.
- **Current drive capability**: Able to carry high current at low on-resistance, reducing heat loss.
- **Package type**: TO252
- **Configuration**: Single-ended P-channel MOSFET (Single P-Channel)
- **Drain-source voltage (V_DS)**: -60V (maximum rating)
- **Gate-source voltage (V_GS)**: ±20V (maximum rating)
- **Gate-source threshold voltage (V_th)**: -1.7V (typical value)
- **R_DS(on) (at V_GS = 10V)**: 46mΩ (on-resistance)
- **R_DS(on) (at V_GS = 4.5V)**: 58mΩ (on-resistance)
- **Drain current (I_D)**: -35A (maximum rating)
- **Maximum power dissipation**: 150W (typical)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Switching performance**: Excellent switching speed, low on-resistance, suitable for high frequency and high current applications.
- **Current drive capability**: Able to carry high current at low on-resistance, reducing heat loss.
Domain and module applications：
3. **Applications and Module Examples**
- **DC-DC Power Converters**: VSD080P06MS-VB is suitable for medium to high voltage DC-DC power converters, especially those using negative supply voltages, such as industrial control systems, power tools, battery-powered systems, and automotive power supplies. It provides efficient current conversion and low power loss to ensure stable power supply operation.
- **Motor Drive and Control Systems**: In motor drive applications, P-channel MOSFETs are very important switching elements, especially in power tools, home appliance motors, electric vehicles, etc. that require high efficiency and high current. The low on-resistance characteristics of VSD080P06MS-VB make it suitable for use in the drive circuit of the motor, which can improve system efficiency and reduce heat accumulation.
- **Battery Management System (BMS)**: VSD080P06MS-VB can be used in battery management systems, especially in battery management for electric vehicles (EV) and hybrid electric vehicles (HEV). Through efficient current control, the MOSFET can help accurately manage the battery's charging and discharging process, optimize the battery's performance, and extend its service life.
- **LED Driver**: In LED driver, VSD080P06MS-VB can be used as an efficient switching element, capable of operating under high current conditions and reducing power losses. The low on-resistance and high current carrying capacity of this MOSFET ensure efficient and stable operation when driving high-power LED lighting applications, and is widely used in large-scale lighting and architectural lighting.
- **Inverter and Renewable Energy Systems**: VSD080P06MS-VB can be used in solar inverters, wind power generation systems, and other renewable energy conversion systems. Due to its good switching characteristics and low on-resistance, it can effectively improve power conversion efficiency, especially in systems in the medium voltage range, and can efficiently handle large currents and reduce energy losses.
- **Intelligent Power Module**: The high current handling capability and low on-resistance of VSD080P06MS-VB make it an ideal choice for intelligent power modules, providing efficient switch control in various power management systems. Applications include computer power supplies, communication equipment power supplies, portable power supplies, etc.
In summary, VSD080P06MS-VB is a low on-resistance, high current carrying capacity P-channel MOSFET, which is widely used in efficient power conversion, motor control, LED drive, inverter and other fields. Its high efficiency makes it an ideal choice for high power, high current applications, optimizing energy efficiency and reducing heat accumulation in the system.
- **DC-DC Power Converters**: VSD080P06MS-VB is suitable for medium to high voltage DC-DC power converters, especially those using negative supply voltages, such as industrial control systems, power tools, battery-powered systems, and automotive power supplies. It provides efficient current conversion and low power loss to ensure stable power supply operation.
- **Motor Drive and Control Systems**: In motor drive applications, P-channel MOSFETs are very important switching elements, especially in power tools, home appliance motors, electric vehicles, etc. that require high efficiency and high current. The low on-resistance characteristics of VSD080P06MS-VB make it suitable for use in the drive circuit of the motor, which can improve system efficiency and reduce heat accumulation.
- **Battery Management System (BMS)**: VSD080P06MS-VB can be used in battery management systems, especially in battery management for electric vehicles (EV) and hybrid electric vehicles (HEV). Through efficient current control, the MOSFET can help accurately manage the battery's charging and discharging process, optimize the battery's performance, and extend its service life.
- **LED Driver**: In LED driver, VSD080P06MS-VB can be used as an efficient switching element, capable of operating under high current conditions and reducing power losses. The low on-resistance and high current carrying capacity of this MOSFET ensure efficient and stable operation when driving high-power LED lighting applications, and is widely used in large-scale lighting and architectural lighting.
- **Inverter and Renewable Energy Systems**: VSD080P06MS-VB can be used in solar inverters, wind power generation systems, and other renewable energy conversion systems. Due to its good switching characteristics and low on-resistance, it can effectively improve power conversion efficiency, especially in systems in the medium voltage range, and can efficiently handle large currents and reduce energy losses.
- **Intelligent Power Module**: The high current handling capability and low on-resistance of VSD080P06MS-VB make it an ideal choice for intelligent power modules, providing efficient switch control in various power management systems. Applications include computer power supplies, communication equipment power supplies, portable power supplies, etc.
In summary, VSD080P06MS-VB is a low on-resistance, high current carrying capacity P-channel MOSFET, which is widely used in efficient power conversion, motor control, LED drive, inverter and other fields. Its high efficiency makes it an ideal choice for high power, high current applications, optimizing energy efficiency and reducing heat accumulation in the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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