VSD040N04MS-VB Product details
Product introduction:
**VSD040N04MS-VB** is a high-performance single N-Channel MOSFET in a TO252 package, suitable for a variety of power management and switching applications. This MOSFET has a low on-resistance (R_DS(ON)) of 14mΩ (V_GS = 4.5V) and 12mΩ (V_GS = 10V), enabling it to provide extremely high efficiency in high current applications. Its maximum drain voltage (V_DS) is 40V, maximum gate voltage (V_GS) is ±20V, and threshold voltage (V_th) is 2.5V, making it suitable for a wide range of power switches and power conversion circuits. VSD040N04MS-VB uses Trench technology and can handle a maximum drain current of 55A, ensuring stable operation even under high load conditions, making it particularly suitable for high-efficiency power management and voltage conversion applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain voltage (V_DS)**: 40V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 2.5V
- **On-resistance (R_DS(ON))**:
- 14mΩ @ V_GS = 4.5V
- 12mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 55A
- **Technology**: Trench
- **Power loss**: Low on-resistance ensures low power loss and improves overall energy efficiency.
- **Operating temperature range**: Wide operating temperature range to adapt to different environmental conditions.
- **Thermal Management**: Trench technology optimizes thermal conductivity, effectively reduces temperature rise, and ensures efficient operation.
Domain and module applications:
**1. Power management system**
VSD040N04MS-VB is suitable for various power management modules, such as DC-DC converters and power regulators. Due to its low on-resistance and high current carrying capacity, it can maintain efficient operation under high load conditions, reduce power loss, and improve power conversion efficiency. In applications such as smart power, industrial power, and communication power, the advantages of this MOSFET are particularly prominent.
**2. Battery Management System (BMS)**
In the battery management system, VSD040N04MS-VB can be used as a battery charge and discharge control switch to help regulate the current flow of the battery and ensure stable charging and discharging of the battery. In electric vehicles (EV) and renewable energy storage systems (such as solar energy storage systems), MOSFET plays a vital role, especially in high-power battery management systems that require high current control. VSD040N04MS-VB provides efficient current switching capabilities.
**3. Power tools and home appliances**
VSD040N04MS-VB can be used in power management and drive circuits of power tools and home appliances. Due to its low R_DS(ON) and high drain current carrying capacity, MOSFET can ensure stable operation of the device under high power load, especially suitable for high-efficiency power tools such as electric drills, electric saws, etc., and drive circuits in home appliances such as vacuum cleaners, electric fans, etc.
**4. Electric vehicles (EV) and hybrid electric vehicles (HEV)**
In the drive system of electric vehicles and hybrid electric vehicles, VSD040N04MS-VB can be used for efficient battery charging, drive motor control and energy recovery modules. The low on-resistance of MOSFET can reduce power loss and ensure more efficient and stable power conversion between battery and motor. Its maximum drain current of 55A makes it suitable for high power current applications.
**5. LED drive circuit**
VSD040N04MS-VB can be used as a switching element in the LED drive circuit to ensure that the LED operates at a constant current. By providing low power loss and high current carrying capacity, it can effectively improve the overall efficiency of the LED module and extend its service life. This MOSFET is an ideal choice for LED lighting systems that require high efficiency and high stability.
**6. Switching power supply and inverter**
VSD040N04MS-VB is suitable for switching power supply (SMPS) and inverter applications, especially in situations where high current and high efficiency power conversion are required. For example, in solar inverters and UPS power supplies, this MOSFET can provide precise power switching control and reduce power losses in the system through low on-resistance, thereby improving the overall efficiency of the system.
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