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VSD030C04MC-VB Product details
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Product Introduction: VSD030C04MC-VB
**VSD030C04MC-VB** is a **N+P channel MOSFET** with **Common Drain** structure in **TO252-4L** package, supporting **±40V** drain-source voltage (VDS), **±50A** maximum drain current, **14mΩ** on-resistance (RDS(ON)) (at **VGS = 4.5V**) and **Trench technology**. This MOSFET has **N-channel** and **P-channel** bidirectional current control capabilities, and is very suitable for applications that require bipolar switching characteristics, such as **power management**, **inverters**, **battery management systems (BMS)** and other efficient energy conversion systems. Its low on-resistance and high current carrying capacity make it have important application value in power conversion and management.
**VSD030C04MC-VB** is a **N+P channel MOSFET** with **Common Drain** structure in **TO252-4L** package, supporting **±40V** drain-source voltage (VDS), **±50A** maximum drain current, **14mΩ** on-resistance (RDS(ON)) (at **VGS = 4.5V**) and **Trench technology**. This MOSFET has **N-channel** and **P-channel** bidirectional current control capabilities, and is very suitable for applications that require bipolar switching characteristics, such as **power management**, **inverters**, **battery management systems (BMS)** and other efficient energy conversion systems. Its low on-resistance and high current carrying capacity make it have important application value in power conversion and management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | 16/16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±40V | 1.8/-1.7V | ±50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
Detailed parameter description:
| **Parameter** | **Description** |
|------------------------|--------------------------------------|
| **Package type** | TO252-4L |
| **Configuration** | Common Drain N+P channel MOSFET |
| **VDS (drain-source voltage)** | ±40V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (threshold voltage)** | N channel: 1.8V; P channel: -1.7V |
| **RDS(ON) (on-resistance)** | N channel: 14mΩ (VGS=4.5V); P channel: 14mΩ (VGS=4.5V) |
| **RDS(ON) (on-resistance)** | N channel: 16mΩ (VGS=10V); P channel: 16mΩ (VGS=10V) |
| **ID（Maximum drain current）** | ±50A |
| **Technology** | Trench technology|
| **Parameter** | **Description** |
|------------------------|--------------------------------------|
| **Package type** | TO252-4L |
| **Configuration** | Common Drain N+P channel MOSFET |
| **VDS (drain-source voltage)** | ±40V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (threshold voltage)** | N channel: 1.8V; P channel: -1.7V |
| **RDS(ON) (on-resistance)** | N channel: 14mΩ (VGS=4.5V); P channel: 14mΩ (VGS=4.5V) |
| **RDS(ON) (on-resistance)** | N channel: 16mΩ (VGS=10V); P channel: 16mΩ (VGS=10V) |
| **ID（Maximum drain current）** | ±50A |
| **Technology** | Trench technology|
Domain and module applications：
Application fields and module examples:
1. **Power management system**:
VSD030C04MC-VB, as a dual-channel MOSFET, has bipolar switching capability and is particularly suitable for power regulation modules in **power management systems**. It can effectively control the current flow in **DC-DC converters** to ensure efficient voltage conversion. At the same time, the low on-resistance (**14mΩ**) ensures that the system can maintain low heat generation when running under high load, improving overall energy efficiency.
2. **Inverter and battery management system (BMS)**:
In **inverters** and **battery management systems** (BMS), VSD030C04MC-VB has excellent bidirectional current switching capabilities. It can play a key role in the conversion of direct current (DC) and alternating current (AC), especially for **solar inverters** and **wind power generation systems**. Low RDS(ON) enables it to maintain low losses during battery charging and discharging, thereby improving the efficiency and life of the battery system.
3. **Electric Vehicle (EV) Power Module**:
This MOSFET is widely used in **Battery Management System (BMS)** of electric vehicles, especially in **Battery Protection Circuit**, **Motor Drive System** and **Charging Control Module** of electric vehicles. Its bipolar switching characteristics enable it to achieve precise control during battery charging and discharging, ensuring the stability and reliability of the system, especially suitable for high current handling applications.
4. **High-Efficiency Battery Charger**:
VSD030C04MC-VB is suitable for **High-Efficiency Battery Charger**, especially in devices that require fast charging and high current output. Due to its low on-resistance (**14mΩ**), it can significantly reduce power loss and improve charging efficiency. Whether it is a **power tool charger** or a **portable device charger**, this MOSFET can provide stable and efficient current control.
5. **Power tools and consumer electronics**:
VSD030C04MC-VB is suitable for power management systems of **power tools** and **consumer electronics**, such as **cordless vacuum cleaners**, **electric shavers** and other devices. In these applications, the bipolar switching function of MOSFET can effectively manage the charge and discharge of the battery, optimize power conversion, and ensure efficient and stable operation of the equipment.
6. **High-frequency switching power supply**:
This MOSFET can also be widely used in **high-frequency switching power supply**, especially in **RF amplifier**, **RF power amplifier** and other fields. Due to its excellent switching characteristics and low on-resistance, it can handle high-frequency current and ensure the efficiency and stability of the system.
7. **Smart home system**:
In the smart home system, VSD030C04MC-VB can be used as a switching element in modules such as **intelligent lighting control system** and **intelligent power management system**. Its low RDS(ON) and high current handling capability make it suitable for providing efficient power control in scenarios where multiple devices are running simultaneously, reducing energy loss and improving the overall performance of smart home systems.
1. **Power management system**:
VSD030C04MC-VB, as a dual-channel MOSFET, has bipolar switching capability and is particularly suitable for power regulation modules in **power management systems**. It can effectively control the current flow in **DC-DC converters** to ensure efficient voltage conversion. At the same time, the low on-resistance (**14mΩ**) ensures that the system can maintain low heat generation when running under high load, improving overall energy efficiency.
2. **Inverter and battery management system (BMS)**:
In **inverters** and **battery management systems** (BMS), VSD030C04MC-VB has excellent bidirectional current switching capabilities. It can play a key role in the conversion of direct current (DC) and alternating current (AC), especially for **solar inverters** and **wind power generation systems**. Low RDS(ON) enables it to maintain low losses during battery charging and discharging, thereby improving the efficiency and life of the battery system.
3. **Electric Vehicle (EV) Power Module**:
This MOSFET is widely used in **Battery Management System (BMS)** of electric vehicles, especially in **Battery Protection Circuit**, **Motor Drive System** and **Charging Control Module** of electric vehicles. Its bipolar switching characteristics enable it to achieve precise control during battery charging and discharging, ensuring the stability and reliability of the system, especially suitable for high current handling applications.
4. **High-Efficiency Battery Charger**:
VSD030C04MC-VB is suitable for **High-Efficiency Battery Charger**, especially in devices that require fast charging and high current output. Due to its low on-resistance (**14mΩ**), it can significantly reduce power loss and improve charging efficiency. Whether it is a **power tool charger** or a **portable device charger**, this MOSFET can provide stable and efficient current control.
5. **Power tools and consumer electronics**:
VSD030C04MC-VB is suitable for power management systems of **power tools** and **consumer electronics**, such as **cordless vacuum cleaners**, **electric shavers** and other devices. In these applications, the bipolar switching function of MOSFET can effectively manage the charge and discharge of the battery, optimize power conversion, and ensure efficient and stable operation of the equipment.
6. **High-frequency switching power supply**:
This MOSFET can also be widely used in **high-frequency switching power supply**, especially in **RF amplifier**, **RF power amplifier** and other fields. Due to its excellent switching characteristics and low on-resistance, it can handle high-frequency current and ensure the efficiency and stability of the system.
7. **Smart home system**:
In the smart home system, VSD030C04MC-VB can be used as a switching element in modules such as **intelligent lighting control system** and **intelligent power management system**. Its low RDS(ON) and high current handling capability make it suitable for providing efficient power control in scenarios where multiple devices are running simultaneously, reducing energy loss and improving the overall performance of smart home systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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