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VSD026N04MS-VB Product details
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1. **VSD026N04MS-VB Product Introduction**
VSD026N04MS-VB is a high-performance N-channel MOSFET in TO252 package, designed for high-performance power management and current drive applications. It has a drain-source voltage (V_DS) of 40V, suitable for power conversion systems in the medium voltage range. The gate-source voltage (V_GS) of the MOSFET is ±20V, with a wide operating range and can remain stable under multiple voltage control environments. The gate-source threshold voltage (V_th) of the MOSFET is 2.5V, ensuring good switching performance. The on-resistance (R_DS(on)) of the VSD026N04MS-VB is 14mΩ at V_GS = 4.5V and 12mΩ at V_GS = 10V, which makes it show excellent efficiency in high current applications. The maximum drain current (I_D) is 55A, which is suitable for handling larger current loads, especially in power supply and drive applications, and can provide efficient current transmission and reduce power loss.
VSD026N04MS-VB is a high-performance N-channel MOSFET in TO252 package, designed for high-performance power management and current drive applications. It has a drain-source voltage (V_DS) of 40V, suitable for power conversion systems in the medium voltage range. The gate-source voltage (V_GS) of the MOSFET is ±20V, with a wide operating range and can remain stable under multiple voltage control environments. The gate-source threshold voltage (V_th) of the MOSFET is 2.5V, ensuring good switching performance. The on-resistance (R_DS(on)) of the VSD026N04MS-VB is 14mΩ at V_GS = 4.5V and 12mΩ at V_GS = 10V, which makes it show excellent efficiency in high current applications. The maximum drain current (I_D) is 55A, which is suitable for handling larger current loads, especially in power supply and drive applications, and can provide efficient current transmission and reduce power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **VSD026N04MS-VB detailed parameter description**
- **Package type**: TO252
- **Configuration**: Single-ended N-channel MOSFET (Single N-Channel)
- **Drain-source voltage (V_DS)**: 40V (maximum rating)
- **Gate-source voltage (V_GS)**: ±20V (maximum rating)
- **Gate-source threshold voltage (V_th)**: 2.5V (typical value)
- **R_DS(on) (at V_GS = 10V)**: 12mΩ (on-resistance)
- **R_DS(on) (at V_GS = 4.5V)**: 14mΩ (on-resistance)
- **Drain current (I_D)**: 55A (maximum rating)
- **Maximum power dissipation**: 150W (typical)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Switching performance**: Excellent switching speed, low on-resistance, suitable for high frequency and high current applications.
- **Current drive capability**: Able to carry high current at low on-resistance, reducing heat loss.
- **Package type**: TO252
- **Configuration**: Single-ended N-channel MOSFET (Single N-Channel)
- **Drain-source voltage (V_DS)**: 40V (maximum rating)
- **Gate-source voltage (V_GS)**: ±20V (maximum rating)
- **Gate-source threshold voltage (V_th)**: 2.5V (typical value)
- **R_DS(on) (at V_GS = 10V)**: 12mΩ (on-resistance)
- **R_DS(on) (at V_GS = 4.5V)**: 14mΩ (on-resistance)
- **Drain current (I_D)**: 55A (maximum rating)
- **Maximum power dissipation**: 150W (typical)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Switching performance**: Excellent switching speed, low on-resistance, suitable for high frequency and high current applications.
- **Current drive capability**: Able to carry high current at low on-resistance, reducing heat loss.
Domain and module applications：
3. **Applications and Module Examples**
- **DC-DC Power Converter**: VSD026N04MS-VB is ideal for use in high-efficiency DC-DC power converters, especially in applications requiring medium voltage and high current. It can provide low power loss and fast switching speed, which is very suitable for use in battery-powered systems or high-efficiency power modules, and is widely used in portable devices, automotive power systems and industrial power supplies.
- **Motor Drive and Control System**: In motor drive applications, VSD026N04MS-VB is used as a switching element to efficiently control the start and stop, speed regulation, etc. of the motor. Due to its low on-resistance and high current handling capability, it is particularly suitable for power tools, household appliance motors and electric transportation tools, etc., to ensure efficient operation of the system and reduce power loss.
- **LED Driver**: VSD026N04MS-VB can be used as a switching element in LED driver power to help improve energy efficiency and reduce power consumption. Its low on-resistance allows it to effectively reduce heat accumulation and improve the life and performance of the entire drive system when efficiently driving high-brightness LED lighting.
- **Battery Management System (BMS)**: This MOSFET can be widely used in battery management systems, especially in battery management for electric vehicles (EV) and hybrid electric vehicles (HEV). Through precise current control and efficient energy conversion, it can help manage the battery's charge and discharge process, ensure battery safety, reliability and extend battery life.
- **Power Adapter and Charger**: VSD026N04MS-VB is also suitable for high-performance power adapters and chargers, especially when small size and high efficiency are required. Its low on-resistance and high current carrying capacity enable it to maintain stable operation under fast charging and high load conditions, suitable for consumer electronics such as mobile devices and laptop chargers.
- **Smart Grid and Renewable Energy Systems**: In smart grid and renewable energy applications, VSD026N04MS-VB can be used in power conversion, storage systems and energy management modules. Its high efficiency ensures that energy loss is minimized during high power conversion and achieves better power transmission efficiency in the system.
In summary, VSD026N04MS-VB is an excellent N-channel MOSFET with low on-resistance, high current handling capability and a wide range of applications. It is suitable for multiple high-efficiency applications such as DC-DC power conversion, LED drive, motor control, battery management system, power adapter, etc. Its excellent switching characteristics and high power handling capability make it an ideal choice for efficient power management and current control systems.
- **DC-DC Power Converter**: VSD026N04MS-VB is ideal for use in high-efficiency DC-DC power converters, especially in applications requiring medium voltage and high current. It can provide low power loss and fast switching speed, which is very suitable for use in battery-powered systems or high-efficiency power modules, and is widely used in portable devices, automotive power systems and industrial power supplies.
- **Motor Drive and Control System**: In motor drive applications, VSD026N04MS-VB is used as a switching element to efficiently control the start and stop, speed regulation, etc. of the motor. Due to its low on-resistance and high current handling capability, it is particularly suitable for power tools, household appliance motors and electric transportation tools, etc., to ensure efficient operation of the system and reduce power loss.
- **LED Driver**: VSD026N04MS-VB can be used as a switching element in LED driver power to help improve energy efficiency and reduce power consumption. Its low on-resistance allows it to effectively reduce heat accumulation and improve the life and performance of the entire drive system when efficiently driving high-brightness LED lighting.
- **Battery Management System (BMS)**: This MOSFET can be widely used in battery management systems, especially in battery management for electric vehicles (EV) and hybrid electric vehicles (HEV). Through precise current control and efficient energy conversion, it can help manage the battery's charge and discharge process, ensure battery safety, reliability and extend battery life.
- **Power Adapter and Charger**: VSD026N04MS-VB is also suitable for high-performance power adapters and chargers, especially when small size and high efficiency are required. Its low on-resistance and high current carrying capacity enable it to maintain stable operation under fast charging and high load conditions, suitable for consumer electronics such as mobile devices and laptop chargers.
- **Smart Grid and Renewable Energy Systems**: In smart grid and renewable energy applications, VSD026N04MS-VB can be used in power conversion, storage systems and energy management modules. Its high efficiency ensures that energy loss is minimized during high power conversion and achieves better power transmission efficiency in the system.
In summary, VSD026N04MS-VB is an excellent N-channel MOSFET with low on-resistance, high current handling capability and a wide range of applications. It is suitable for multiple high-efficiency applications such as DC-DC power conversion, LED drive, motor control, battery management system, power adapter, etc. Its excellent switching characteristics and high power handling capability make it an ideal choice for efficient power management and current control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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