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VSD025N10MS-VB Product details
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1. **Product Introduction: VSD025N10MS-VB**
VSD025N10MS-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium and high power applications. It has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 45A, suitable for applications such as efficient power management, voltage regulation, power conversion and battery management. This MOSFET adopts Trench technology, has low on-resistance (RDS(ON)) and excellent switching performance, which can greatly improve system efficiency and reduce power loss. VSD025N10MS-VB can be widely used in automotive electronics, power tools, server power supplies, communication equipment and other fields that require efficient power control.
VSD025N10MS-VB is a high-performance single N-channel MOSFET in TO252 package, designed for medium and high power applications. It has a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 45A, suitable for applications such as efficient power management, voltage regulation, power conversion and battery management. This MOSFET adopts Trench technology, has low on-resistance (RDS(ON)) and excellent switching performance, which can greatly improve system efficiency and reduce power loss. VSD025N10MS-VB can be widely used in automotive electronics, power tools, server power supplies, communication equipment and other fields that require efficient power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description: **
- **Package type**: TO252
The TO252 package (also known as DPAK) is a surface mount package suitable for medium and high power applications. The package provides good heat dissipation performance and can support the MOSFET to operate stably under high power loads.
- **Configuration**: Single N-channel MOSFET
The VSD025N10MS-VB adopts an N-channel configuration, with its source connected to ground, the drain connected to the power supply through the load, and the gate regulating the current switch. N-channel MOSFET has a lower on-resistance, making it more efficient in high current applications.
- **Drain-source voltage (VDS)**: 100V
The maximum drain-source voltage is 100V, which is suitable for medium and high voltage power conversion and power control systems, and can meet the voltage specifications required in general industry, automotive electronics and power tools.
- **Gate-Source Voltage (VGS)**: ±20V
The maximum gate-source voltage is ±20V, which supports common gate drive voltages and can effectively control the switching state of the MOSFET. This voltage range is suitable for most control circuits, ensuring its good compatibility in various applications.
- **Threshold Voltage (Vth)**: 1.8V
The threshold voltage of VSD025N10MS-VB is 1.8V, which means that when the gate-source voltage exceeds 1.8V, the MOSFET starts to turn on. This lower threshold voltage allows the MOSFET to switch quickly at low gate-source voltages, adapting to various control circuit requirements.
- **On-resistance (RDS(ON))**:
- 18mΩ (VGS = 10V)
The VSD025N10MS-VB has an on-resistance of 18mΩ, which has a low on-resistance and reduces power loss. It is particularly suitable for use in high-current applications, can improve conversion efficiency and reduce heat generation.
- **Maximum drain current (ID)**: 45A
The maximum drain current is 45A, which enables this MOSFET to withstand high current loads and is suitable for high-power power management and current control applications. The high current carrying capacity can meet various occasions with high load requirements.
- **Technology type**: Trench
Adopts Trench technology, which achieves low on-resistance (RDS(ON)) by optimizing the MOSFET structure, providing higher efficiency and better thermal performance. Trench technology improves switching speed and current handling capability, reduces switching losses and system energy consumption.
- **Package type**: TO252
The TO252 package (also known as DPAK) is a surface mount package suitable for medium and high power applications. The package provides good heat dissipation performance and can support the MOSFET to operate stably under high power loads.
- **Configuration**: Single N-channel MOSFET
The VSD025N10MS-VB adopts an N-channel configuration, with its source connected to ground, the drain connected to the power supply through the load, and the gate regulating the current switch. N-channel MOSFET has a lower on-resistance, making it more efficient in high current applications.
- **Drain-source voltage (VDS)**: 100V
The maximum drain-source voltage is 100V, which is suitable for medium and high voltage power conversion and power control systems, and can meet the voltage specifications required in general industry, automotive electronics and power tools.
- **Gate-Source Voltage (VGS)**: ±20V
The maximum gate-source voltage is ±20V, which supports common gate drive voltages and can effectively control the switching state of the MOSFET. This voltage range is suitable for most control circuits, ensuring its good compatibility in various applications.
- **Threshold Voltage (Vth)**: 1.8V
The threshold voltage of VSD025N10MS-VB is 1.8V, which means that when the gate-source voltage exceeds 1.8V, the MOSFET starts to turn on. This lower threshold voltage allows the MOSFET to switch quickly at low gate-source voltages, adapting to various control circuit requirements.
- **On-resistance (RDS(ON))**:
- 18mΩ (VGS = 10V)
The VSD025N10MS-VB has an on-resistance of 18mΩ, which has a low on-resistance and reduces power loss. It is particularly suitable for use in high-current applications, can improve conversion efficiency and reduce heat generation.
- **Maximum drain current (ID)**: 45A
The maximum drain current is 45A, which enables this MOSFET to withstand high current loads and is suitable for high-power power management and current control applications. The high current carrying capacity can meet various occasions with high load requirements.
- **Technology type**: Trench
Adopts Trench technology, which achieves low on-resistance (RDS(ON)) by optimizing the MOSFET structure, providing higher efficiency and better thermal performance. Trench technology improves switching speed and current handling capability, reduces switching losses and system energy consumption.
Domain and module applications：
3. **Application fields and module examples:**
- **DC-DC converters**:
VSD025N10MS-VB is ideal for use in DC-DC converters, especially in applications requiring higher current and low power consumption. It enables efficient power conversion, especially for battery-powered devices, mobile devices, and power electronics systems that require high conversion efficiency, and can reduce energy losses during the conversion process.
- **Power tools**:
In power tools, the high current handling capability and low on-resistance of VSD025N10MS-VB enable it to effectively drive the high-power motor of power tools. Its low loss characteristics help to increase battery life and tool life, and are suitable for use in high-load power tools.
- **Automotive electronics**:
This MOSFET is also widely used in the automotive electronics field, especially in battery management systems and power conversion systems for electric vehicles (EVs) and hybrid electric vehicles (HEVs). The high efficiency and stability of VSD025N10MS-VB can meet the power conversion requirements of automotive systems, reduce system power consumption and extend battery life.
- **Power Management System**:
In power management systems, VSD025N10MS-VB can be used in switching power supplies, voltage regulators and voltage regulation modules. Its low on-resistance in these systems can reduce energy loss and improve power efficiency. It is especially suitable for high-power power modules and high-efficiency battery charging equipment.
- **Server and Communication Equipment**:
VSD025N10MS-VB is also suitable for high-power power systems such as server power supplies and communication base station power supplies. In these systems, MOSFETs are used for voltage conversion and current regulation. The low on-resistance characteristics can effectively reduce heat loss and ensure stable and efficient operation of the system.
- **UPS (Uninterruptible Power Supply) Systems**:
VSD025N10MS-VB can be used in UPS (Uninterruptible Power Supply) systems to ensure that the power supply can be quickly switched and provide stable voltage when the power grid fails. Due to its high current and high efficiency, it can greatly improve the reliability and continuous operation time of the UPS system.
- **Power Electronic Equipment**:
This MOSFET can also be used in other power electronic equipment, such as inverters, power amplifiers, etc., especially in situations where high power and efficiency are required. Its low on-resistance and high current carrying capacity enable it to provide higher performance and efficiency in these applications.
- **DC-DC converters**:
VSD025N10MS-VB is ideal for use in DC-DC converters, especially in applications requiring higher current and low power consumption. It enables efficient power conversion, especially for battery-powered devices, mobile devices, and power electronics systems that require high conversion efficiency, and can reduce energy losses during the conversion process.
- **Power tools**:
In power tools, the high current handling capability and low on-resistance of VSD025N10MS-VB enable it to effectively drive the high-power motor of power tools. Its low loss characteristics help to increase battery life and tool life, and are suitable for use in high-load power tools.
- **Automotive electronics**:
This MOSFET is also widely used in the automotive electronics field, especially in battery management systems and power conversion systems for electric vehicles (EVs) and hybrid electric vehicles (HEVs). The high efficiency and stability of VSD025N10MS-VB can meet the power conversion requirements of automotive systems, reduce system power consumption and extend battery life.
- **Power Management System**:
In power management systems, VSD025N10MS-VB can be used in switching power supplies, voltage regulators and voltage regulation modules. Its low on-resistance in these systems can reduce energy loss and improve power efficiency. It is especially suitable for high-power power modules and high-efficiency battery charging equipment.
- **Server and Communication Equipment**:
VSD025N10MS-VB is also suitable for high-power power systems such as server power supplies and communication base station power supplies. In these systems, MOSFETs are used for voltage conversion and current regulation. The low on-resistance characteristics can effectively reduce heat loss and ensure stable and efficient operation of the system.
- **UPS (Uninterruptible Power Supply) Systems**:
VSD025N10MS-VB can be used in UPS (Uninterruptible Power Supply) systems to ensure that the power supply can be quickly switched and provide stable voltage when the power grid fails. Due to its high current and high efficiency, it can greatly improve the reliability and continuous operation time of the UPS system.
- **Power Electronic Equipment**:
This MOSFET can also be used in other power electronic equipment, such as inverters, power amplifiers, etc., especially in situations where high power and efficiency are required. Its low on-resistance and high current carrying capacity enable it to provide higher performance and efficiency in these applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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