中文
English
VSD025N10HS-VB Product details
Back to previous pageProduct introduction：
VSD025N10HS-VB MOSFET Product Introduction
**VSD025N10HS-VB** is a unipolar N-channel MOSFET in TO252 package, designed for high-efficiency power management applications. The product has a maximum drain-source voltage (VDS) of 100V and a good on-resistance (RDS(ON)), which is only 18mΩ at VGS=10V. Its maximum drain current (ID) is 45A, suitable for applications requiring high current and high voltage handling capabilities. VSD025N10HS-VB adopts advanced Trench technology, has excellent switching characteristics and low losses, and is widely used in power conversion, load switching, motor control and other fields.
**VSD025N10HS-VB** is a unipolar N-channel MOSFET in TO252 package, designed for high-efficiency power management applications. The product has a maximum drain-source voltage (VDS) of 100V and a good on-resistance (RDS(ON)), which is only 18mΩ at VGS=10V. Its maximum drain current (ID) is 45A, suitable for applications requiring high current and high voltage handling capabilities. VSD025N10HS-VB adopts advanced Trench technology, has excellent switching characteristics and low losses, and is widely used in power conversion, load switching, motor control and other fields.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
VSD025N10HS-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.8V
- **RDS(ON) (on-resistance)**:
- 18mΩ @ VGS = 10V
- **ID (maximum drain current)**: 45A
- **Technology type**: Trench (slot technology)
- **Package type**: TO252
- **Configuration**: Single N-channel
- **VDS (drain-source voltage)**: 100V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 1.8V
- **RDS(ON) (on-resistance)**:
- 18mΩ @ VGS = 10V
- **ID (maximum drain current)**: 45A
- **Technology type**: Trench (slot technology)
Domain and module applications：
VSD025N10HS-VB MOSFET Applications and Modules
**1. Power Management System**
VSD025N10HS-VB MOSFET is ideal for high-efficiency power conversion systems due to its low on-resistance and high current carrying capacity. For example, in DC-DC converters, it enables low-loss and high-efficiency power conversion, ensuring that the system can operate at higher loads and maintain stable output. It is widely used in power supplies, computer power supplies, and industrial power modules.
**2. Motor Control Systems**
In motor drive and control systems, VSD025N10HS-VB MOSFET can effectively provide efficient power conversion and precise motor speed regulation. It is particularly suitable for power tools, electric vehicles, servo motors, and industrial motor control. Its low on-resistance and high switching speed enable it to efficiently regulate the power input of the motor, optimize performance, and reduce power consumption.
**3. Start-up and switching applications**
The high withstand voltage and low on-resistance of the VSD025N10HS-VB MOSFET make it an ideal choice for start-up and switching applications. For example, battery protection circuits, load switches, and startup circuits. It can respond quickly and reduce current surges, making it important in start-stop control and circuit protection. Due to its high current carrying capacity, the VSD025N10HS-VB is also suitable for high-power switching applications in industries such as automotive, energy, and communications.
**4. Battery Management System (BMS)**
The VSD025N10HS-VB MOSFET is also suitable for battery management systems (BMS) to provide precise current control during battery charging and discharging. Its low on-resistance and high efficiency make battery management more efficient, protecting the battery from overcurrent, overvoltage, or overtemperature, and is widely used in electric vehicles, power storage systems, and other high-efficiency battery-driven applications.
**5. Inverter and photovoltaic power generation system**
In inverter and photovoltaic power generation system, VSD025N10HS-VB MOSFET can effectively realize the conversion of DC to AC through its high voltage resistance and efficient power conversion capability. Especially in solar inverter, this MOSFET can effectively convert the DC power generated by solar panels, reduce conversion loss, improve system efficiency, and ensure long-term stable operation.
**1. Power Management System**
VSD025N10HS-VB MOSFET is ideal for high-efficiency power conversion systems due to its low on-resistance and high current carrying capacity. For example, in DC-DC converters, it enables low-loss and high-efficiency power conversion, ensuring that the system can operate at higher loads and maintain stable output. It is widely used in power supplies, computer power supplies, and industrial power modules.
**2. Motor Control Systems**
In motor drive and control systems, VSD025N10HS-VB MOSFET can effectively provide efficient power conversion and precise motor speed regulation. It is particularly suitable for power tools, electric vehicles, servo motors, and industrial motor control. Its low on-resistance and high switching speed enable it to efficiently regulate the power input of the motor, optimize performance, and reduce power consumption.
**3. Start-up and switching applications**
The high withstand voltage and low on-resistance of the VSD025N10HS-VB MOSFET make it an ideal choice for start-up and switching applications. For example, battery protection circuits, load switches, and startup circuits. It can respond quickly and reduce current surges, making it important in start-stop control and circuit protection. Due to its high current carrying capacity, the VSD025N10HS-VB is also suitable for high-power switching applications in industries such as automotive, energy, and communications.
**4. Battery Management System (BMS)**
The VSD025N10HS-VB MOSFET is also suitable for battery management systems (BMS) to provide precise current control during battery charging and discharging. Its low on-resistance and high efficiency make battery management more efficient, protecting the battery from overcurrent, overvoltage, or overtemperature, and is widely used in electric vehicles, power storage systems, and other high-efficiency battery-driven applications.
**5. Inverter and photovoltaic power generation system**
In inverter and photovoltaic power generation system, VSD025N10HS-VB MOSFET can effectively realize the conversion of DC to AC through its high voltage resistance and efficient power conversion capability. Especially in solar inverter, this MOSFET can effectively convert the DC power generated by solar panels, reduce conversion loss, improve system efficiency, and ensure long-term stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
