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VSD018N03MS-VB Product details

Product introduction:

Product Introduction (VSD018N03MS-VB)

**VSD018N03MS-VB** is a high-performance **single N-channel MOSFET** in **TO252** package, designed for low voltage and high current applications. The maximum drain-source voltage (VDS) of this MOSFET is **30V**, which is suitable for low voltage power supply and load control. Its **threshold voltage (Vth)** is **1.7V**, which ensures efficient operation at a lower gate-source voltage. Using **Trench technology**, this MOSFET has a low on-resistance (RDS(ON)), even at **VGS = 4.5V**, RDS(ON) can still be maintained at **9mΩ**, and at **VGS = 10V**, RDS(ON) is further reduced to **7mΩ**, significantly reducing power loss.

**VSD018N03MS-VB** has a maximum current carrying capacity of **70A**, which is very suitable for applications requiring high current and high power. Thanks to its low on-resistance and high current carrying capacity, this MOSFET is particularly suitable for high-efficiency power management, DC-DC converters, load switches, and battery management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 30V 1.7V 70A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 30V 1.7V 70A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
Detailed parameter description

- **Model**: VSD018N03MS-VB
- **Package type**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 7mΩ @ VGS = 10V
- **Maximum current (ID)**: 70A
- **Technology type**: Trench technology
- **Switching speed**: High-speed switch, suitable for high-frequency applications
- **Operating temperature range**: -55°C to +150°C (typical)
- **Thermal resistance**: Optimized thermal resistance design to improve heat dissipation efficiency
- **Maximum power consumption**: Based on current and on-resistance, power loss needs to be considered when designing the system.

Domain and module applications:

Applications and module examples

1. **DC-DC converter**:
- **VSD018N03MS-VB** is very suitable for **DC-DC converter**, especially in low voltage and high current systems. As a switching element, this MOSFET can be used in buck, boost and buck-boost converters to provide efficient power conversion capabilities. Its low on-resistance characteristics enable the converter to have lower power loss when the load changes, improve overall energy efficiency, and reduce heat generation, which is suitable for high-efficiency power systems.

2. **Battery Management System (BMS)**:
- In the **Battery Management System (BMS)**, **VSD018N03MS-VB** can efficiently manage the charging and discharging process of the battery. Due to its high current carrying capacity (maximum 70A), this MOSFET can effectively regulate the charging and discharging current of the battery, ensure that the battery operates within a safe voltage range, and improve the performance and service life of the battery. It is particularly suitable for application areas such as electric vehicles, power tools, and battery energy storage systems.

3. **Load Switching and Power Management**:
- **VSD018N03MS-VB** is widely used in power management systems as a load switching element. With low on-resistance and high current carrying capacity, it can quickly respond to load changes, stabilize current supply and reduce power loss. This feature makes it suitable for power switching and management in areas such as home appliances, industrial equipment and portable electronic devices.

4. **Electric Drive and Motor Control**:
- Due to its high current carrying capacity and low RDS(ON) characteristics, **VSD018N03MS-VB** is also very suitable for **electric drive systems** and **motor control modules**. For example, in the electric motor drive of power tools, robots or electric vehicles, this MOSFET can be used as an efficient switching element to achieve precise current control and efficient energy conversion, thereby improving the overall efficiency and response speed of the electric drive system.

5. **High-efficiency power conversion and current regulation**:
- In **High-efficiency power conversion systems**, **VSD018N03MS-VB** can be used as a core switching element for DC-AC or AC-DC conversion. Especially in situations where precise current regulation and low energy loss are required, this MOSFET minimizes power loss by reducing on-resistance, thereby improving the efficiency of the power system. It is widely used in communication equipment, server power supplies, and high-efficiency LED drivers.

6. **Overcurrent protection and power switch**:
- Due to its high current carrying capacity and low power consumption, **VSD018N03MS-VB** can also be used for **overcurrent protection** and **power switch control** applications. In a variety of power systems, it can effectively control the flow of current as a switching element to prevent system damage due to overload, and provide a safer and more stable power supply.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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