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VSD013N08MS-VB Product details
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1. Product Introduction
**VSD013N08MS-VB** is a **single N-channel MOSFET** in **TO252** package, designed for applications requiring high current and low power consumption, especially in the fields of high-efficiency power conversion, switching power supplies, and motor drives. This MOSFET has a **maximum drain-source voltage (VDS)** of up to **80V**, suitable for medium and high voltage power supply systems. Its **threshold voltage (Vth)** is **3V**, which enables it to start at a lower gate voltage, suitable for use with low-voltage control circuits.
At **VGS=10V**, **VSD013N08MS-VB**'s **on-resistance (RDS(ON))** is **5mΩ**. Its extremely low on-resistance can significantly reduce power loss and heat generation under high current operation, improving the overall efficiency of the system. The **maximum drain current (ID)** of this MOSFET is **75A**, which means it can carry large current loads and is suitable for high-power, high-frequency switching and high-efficiency applications. The **Trench technology** is used to further enhance the stability and efficiency of this MOSFET in high-speed switching environments.
**VSD013N08MS-VB** is a **single N-channel MOSFET** in **TO252** package, designed for applications requiring high current and low power consumption, especially in the fields of high-efficiency power conversion, switching power supplies, and motor drives. This MOSFET has a **maximum drain-source voltage (VDS)** of up to **80V**, suitable for medium and high voltage power supply systems. Its **threshold voltage (Vth)** is **3V**, which enables it to start at a lower gate voltage, suitable for use with low-voltage control circuits.
At **VGS=10V**, **VSD013N08MS-VB**'s **on-resistance (RDS(ON))** is **5mΩ**. Its extremely low on-resistance can significantly reduce power loss and heat generation under high current operation, improving the overall efficiency of the system. The **maximum drain current (ID)** of this MOSFET is **75A**, which means it can carry large current loads and is suitable for high-power, high-frequency switching and high-efficiency applications. The **Trench technology** is used to further enhance the stability and efficiency of this MOSFET in high-speed switching environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Model:** VSD013N08MS-VB
- **Package type:** TO252
- **Configuration:** Single-N-Channel
- **Maximum drain-source voltage (VDS):** 80V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 5mΩ@VGS=10V
- **Maximum drain current (ID):** 75A
- **Technology:** Trench technology
- **Model:** VSD013N08MS-VB
- **Package type:** TO252
- **Configuration:** Single-N-Channel
- **Maximum drain-source voltage (VDS):** 80V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 5mΩ@VGS=10V
- **Maximum drain current (ID):** 75A
- **Technology:** Trench technology
Domain and module applications：
3. Product Application Examples
**VSD013N08MS-VB** has demonstrated its excellent performance in the following fields and modules:
- **DC-DC Converter:** In **DC-DC Converter**, **VSD013N08MS-VB** is widely used as a switching element in high-efficiency power conversion devices such as power adapters, battery chargers and solar power supplies. The low **RDS(ON)** and high **ID** of this MOSFET make it very suitable for high-frequency switching, which can effectively reduce conversion losses and improve overall energy efficiency.
- **Motor Drive:** In **motor drive systems**, especially for **power tools, electric vehicles** and other applications, MOSFETs such as **VSD013N08MS-VB** are responsible for efficient current switching to ensure smooth drive and fast response of the motor. Its high current carrying capacity and low power loss enable it to work stably under large current loads, improving the efficiency and life of the drive system.
- **Battery Management System (BMS):** In **Battery Management System** (such as used in electric vehicles, energy storage devices, etc.), **VSD013N08MS-VB** can be used as a control element for battery charging and discharging. Its low on-resistance (**RDS(ON)**) effectively reduces power loss, improves the charging and discharging efficiency of the battery system, and extends the battery life.
- **Power Management and Conversion Module:** **VSD013N08MS-VB** can be used as the main switching element in **Power Management** Modules, especially in applications that require efficient power conversion and high current processing, to play the role of current regulation and switch control. Whether in **Uninterruptible Power Supply (UPS)** or in various **Power Conditioning Modules**, it can provide efficient power conversion, reduce heat generation, and improve the overall stability of the system.
- **Switching Mode Power Supply (SMPS):** In a **Switching Mode Power Supply (SMPS)** system, MOSFETs such as **VSD013N08MS-VB** are used for high-speed switching to ensure efficient energy conversion from **AC to DC** or **DC to DC**. This MOSFET can operate stably at high frequency, and its low **RDS(ON)** can significantly reduce switching losses, improving the overall efficiency and power density of the switching power supply.
**VSD013N08MS-VB** has demonstrated its excellent performance in the following fields and modules:
- **DC-DC Converter:** In **DC-DC Converter**, **VSD013N08MS-VB** is widely used as a switching element in high-efficiency power conversion devices such as power adapters, battery chargers and solar power supplies. The low **RDS(ON)** and high **ID** of this MOSFET make it very suitable for high-frequency switching, which can effectively reduce conversion losses and improve overall energy efficiency.
- **Motor Drive:** In **motor drive systems**, especially for **power tools, electric vehicles** and other applications, MOSFETs such as **VSD013N08MS-VB** are responsible for efficient current switching to ensure smooth drive and fast response of the motor. Its high current carrying capacity and low power loss enable it to work stably under large current loads, improving the efficiency and life of the drive system.
- **Battery Management System (BMS):** In **Battery Management System** (such as used in electric vehicles, energy storage devices, etc.), **VSD013N08MS-VB** can be used as a control element for battery charging and discharging. Its low on-resistance (**RDS(ON)**) effectively reduces power loss, improves the charging and discharging efficiency of the battery system, and extends the battery life.
- **Power Management and Conversion Module:** **VSD013N08MS-VB** can be used as the main switching element in **Power Management** Modules, especially in applications that require efficient power conversion and high current processing, to play the role of current regulation and switch control. Whether in **Uninterruptible Power Supply (UPS)** or in various **Power Conditioning Modules**, it can provide efficient power conversion, reduce heat generation, and improve the overall stability of the system.
- **Switching Mode Power Supply (SMPS):** In a **Switching Mode Power Supply (SMPS)** system, MOSFETs such as **VSD013N08MS-VB** are used for high-speed switching to ensure efficient energy conversion from **AC to DC** or **DC to DC**. This MOSFET can operate stably at high frequency, and its low **RDS(ON)** can significantly reduce switching losses, improving the overall efficiency and power density of the switching power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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