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VSD012N06HS-VB Product details
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1. **VSD012N06HS-VB Product Introduction**
VSD012N06HS-VB is a high-performance N-channel MOSFET in TO252 package, designed for high-efficiency power conversion and current drive applications. This MOSFET has a rated drain-source voltage (V_DS) of 60V, suitable for medium voltage applications, providing higher current carrying capacity, suitable for high-efficiency power management and current drive scenarios. Its gate-source voltage (V_GS) is ±20V, and it can work stably over a wide range of control voltages. The gate-source threshold voltage (V_th) of VSD012N06HS-VB is 3V, with a low start-up voltage to ensure the sensitivity of the switching operation. The on-resistance (R_DS(on)) of the MOSFET is 4.5mΩ at V_GS = 10V and 12mΩ at V_GS = 4.5V, which makes it have very low conduction losses, and can efficiently transmit current and reduce heat generation in high current applications. With a maximum drain current (I_D) of 97A, it is capable of handling high currents and is suitable for applications requiring high current and low power loss.
VSD012N06HS-VB is a high-performance N-channel MOSFET in TO252 package, designed for high-efficiency power conversion and current drive applications. This MOSFET has a rated drain-source voltage (V_DS) of 60V, suitable for medium voltage applications, providing higher current carrying capacity, suitable for high-efficiency power management and current drive scenarios. Its gate-source voltage (V_GS) is ±20V, and it can work stably over a wide range of control voltages. The gate-source threshold voltage (V_th) of VSD012N06HS-VB is 3V, with a low start-up voltage to ensure the sensitivity of the switching operation. The on-resistance (R_DS(on)) of the MOSFET is 4.5mΩ at V_GS = 10V and 12mΩ at V_GS = 4.5V, which makes it have very low conduction losses, and can efficiently transmit current and reduce heat generation in high current applications. With a maximum drain current (I_D) of 97A, it is capable of handling high currents and is suitable for applications requiring high current and low power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **VSD012N06HS-VB detailed parameter description**
- **Package type**: TO252
- **Configuration**: Single-ended N-channel MOSFET (Single N-Channel)
- **Drain-source voltage (V_DS)**: 60V (maximum rating)
- **Gate-source voltage (V_GS)**: ±20V (maximum rating)
- **Gate-source threshold voltage (V_th)**: 3V (typical value)
- **R_DS(on) (at V_GS = 10V)**: 4.5mΩ (on-resistance)
- **R_DS(on) (at V_GS = 4.5V)**: 12mΩ (on-resistance)
- **Drain current (I_D)**: 97A (maximum rating)
- **Maximum power dissipation**: 150W (typical)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Switching performance**: Provides efficient switching operation, suitable for high-frequency applications and high-current scenarios, low on-resistance, and can effectively reduce switching losses.
- **Package type**: TO252
- **Configuration**: Single-ended N-channel MOSFET (Single N-Channel)
- **Drain-source voltage (V_DS)**: 60V (maximum rating)
- **Gate-source voltage (V_GS)**: ±20V (maximum rating)
- **Gate-source threshold voltage (V_th)**: 3V (typical value)
- **R_DS(on) (at V_GS = 10V)**: 4.5mΩ (on-resistance)
- **R_DS(on) (at V_GS = 4.5V)**: 12mΩ (on-resistance)
- **Drain current (I_D)**: 97A (maximum rating)
- **Maximum power dissipation**: 150W (typical)
- **Operating temperature range**: -55°C to +150°C
- **Technology**: Trench technology
- **Switching performance**: Provides efficient switching operation, suitable for high-frequency applications and high-current scenarios, low on-resistance, and can effectively reduce switching losses.
Domain and module applications：
3. **Application fields and module examples**
- **DC-DC power converter**: VSD012N06HS-VB is very suitable for efficient DC-DC power converters, especially in applications requiring high current and medium voltage, such as battery-powered power management systems. Its low on-resistance and high current capability enable it to efficiently convert voltage and reduce energy loss, and is widely used in industrial power supplies and automotive power systems.
- **Power tools and motor drives**: In power tools and motor drive applications, VSD012N06HS-VB can be used as a switch control element with low on-resistance, enabling efficient driving of high current loads. It is suitable for scenarios such as motor start-stop control, power tools, and motor speed regulation, ensuring efficient power conversion and control.
- **Battery Management System (BMS)**: VSD012N06HS-VB is suitable for battery management systems, especially in battery management systems for electric vehicles (EV) and hybrid electric vehicles (HEV). Its low on-resistance and high current capability are ideal for battery charge and discharge management, and improve the energy efficiency and life of the overall battery pack.
- **LED Driver**: In LED driver applications, VSD012N06HS-VB acts as an efficient switching element that can effectively regulate current and provide a stable drive voltage. Its low on-resistance reduces power loss and is ideal for efficient LED lighting drive systems, helping to increase light source brightness and extend service life.
- **Electric Vehicles and Electric Vehicle Charging Systems**: This MOSFET is suitable for charging systems in electric vehicles (such as electric bicycles, electric scooters, etc.) and electric vehicles. With its low switching loss and high current carrying capacity, it can optimize the battery charging process, improve charging efficiency, and ensure battery safety and long life.
- **Consumer Electronics and Smart Home Devices**: VSD012N06HS-VB can be widely used in smart home devices and consumer electronics, such as smart power adapters, electronic product battery chargers, etc. Its high-efficiency switching characteristics and high current capability can effectively improve the stability of the equipment and reduce energy consumption.
In summary, VSD012N06HS-VB is a high-efficiency N-channel MOSFET, suitable for various high-current, high-frequency and low-power loss applications, and is widely used in power management, electric drive, LED lighting, battery management and smart home. Its excellent switching performance and low on-resistance make it important in high-efficiency current control and power conversion systems.
- **DC-DC power converter**: VSD012N06HS-VB is very suitable for efficient DC-DC power converters, especially in applications requiring high current and medium voltage, such as battery-powered power management systems. Its low on-resistance and high current capability enable it to efficiently convert voltage and reduce energy loss, and is widely used in industrial power supplies and automotive power systems.
- **Power tools and motor drives**: In power tools and motor drive applications, VSD012N06HS-VB can be used as a switch control element with low on-resistance, enabling efficient driving of high current loads. It is suitable for scenarios such as motor start-stop control, power tools, and motor speed regulation, ensuring efficient power conversion and control.
- **Battery Management System (BMS)**: VSD012N06HS-VB is suitable for battery management systems, especially in battery management systems for electric vehicles (EV) and hybrid electric vehicles (HEV). Its low on-resistance and high current capability are ideal for battery charge and discharge management, and improve the energy efficiency and life of the overall battery pack.
- **LED Driver**: In LED driver applications, VSD012N06HS-VB acts as an efficient switching element that can effectively regulate current and provide a stable drive voltage. Its low on-resistance reduces power loss and is ideal for efficient LED lighting drive systems, helping to increase light source brightness and extend service life.
- **Electric Vehicles and Electric Vehicle Charging Systems**: This MOSFET is suitable for charging systems in electric vehicles (such as electric bicycles, electric scooters, etc.) and electric vehicles. With its low switching loss and high current carrying capacity, it can optimize the battery charging process, improve charging efficiency, and ensure battery safety and long life.
- **Consumer Electronics and Smart Home Devices**: VSD012N06HS-VB can be widely used in smart home devices and consumer electronics, such as smart power adapters, electronic product battery chargers, etc. Its high-efficiency switching characteristics and high current capability can effectively improve the stability of the equipment and reduce energy consumption.
In summary, VSD012N06HS-VB is a high-efficiency N-channel MOSFET, suitable for various high-current, high-frequency and low-power loss applications, and is widely used in power management, electric drive, LED lighting, battery management and smart home. Its excellent switching performance and low on-resistance make it important in high-efficiency current control and power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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