中文
English
VSD010N08MS-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction: VSD010N08MS-VB**
VSD010N08MS-VB is a high-performance N-channel MOSFET in TO252 package, designed for high-efficiency power switching applications. It has a maximum drain-source voltage (VDS) of 80V and a maximum drain current (ID) of 75A, which is particularly suitable for applications requiring high current handling capability and low conduction losses. This MOSFET uses Trench technology and has extremely low on-resistance (RDS(ON)), which can significantly improve the overall efficiency of the system. VSD010N08MS-VB is suitable for high power conversion, power management, automotive electronics and industrial power modules. While providing efficient current control and low power loss, it ensures high reliability and long life of the system.
VSD010N08MS-VB is a high-performance N-channel MOSFET in TO252 package, designed for high-efficiency power switching applications. It has a maximum drain-source voltage (VDS) of 80V and a maximum drain current (ID) of 75A, which is particularly suitable for applications requiring high current handling capability and low conduction losses. This MOSFET uses Trench technology and has extremely low on-resistance (RDS(ON)), which can significantly improve the overall efficiency of the system. VSD010N08MS-VB is suitable for high power conversion, power management, automotive electronics and industrial power modules. While providing efficient current control and low power loss, it ensures high reliability and long life of the system.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description: **
- **Package type**: TO252
The TO252 package (also known as DPAK) is a surface mount package with good heat dissipation performance and small footprint, suitable for high power applications. It can effectively support the application of this MOSFET in high power and high current environments.
- **Configuration**: Single N-channel MOSFET
As an N-channel MOSFET, the source of VSD010N08MS-VB is connected to the ground, the drain is connected to the power supply through the load, and the regulation of the gate voltage controls the conduction and cutoff of the current. N-channel MOSFET has lower on-resistance in low voltage applications and is suitable for switching control that handles larger currents.
- **Drain-source voltage (VDS)**: 80V
The maximum drain-source voltage of VSD010N08MS-VB is 80V, which is suitable for a variety of power management systems in the low to medium voltage range, especially in electronic circuits that require voltages of 80V or less, and can provide effective switching control.
- **Gate-source voltage (VGS)**: ±20V
The maximum gate-source voltage of this MOSFET is ±20V, which is suitable for most standard drive circuits, ensuring the compatibility and adjustability of the MOSFET in the control circuit.
- **Threshold voltage (Vth)**: 3V
With a threshold voltage of 3V, this MOSFET starts to turn on when the gate voltage exceeds 3V. It has high sensitivity and low switching threshold voltage and is suitable for various low-voltage control applications.
- **On-resistance (RDS(ON))**:
- 5mΩ (VGS = 10V)
VSD010N08MS-VB has a very low on-resistance of only 5mΩ. In high current applications, low on-resistance can effectively reduce power loss and heat generation, and improve system efficiency.
- **Maximum drain current (ID)**: 75A
The maximum drain current is 75A, which is suitable for applications that require high current control. Its high current handling capability ensures stability and reliability in the power system, especially for power systems with high load requirements.
- **Technology type**: Trench
The use of Trench technology can provide low on-resistance and higher switching efficiency. Trench technology helps to reduce the size and conduction loss of MOSFET, making this MOSFET perform well in high-frequency and high-efficiency power applications.
- **Package type**: TO252
The TO252 package (also known as DPAK) is a surface mount package with good heat dissipation performance and small footprint, suitable for high power applications. It can effectively support the application of this MOSFET in high power and high current environments.
- **Configuration**: Single N-channel MOSFET
As an N-channel MOSFET, the source of VSD010N08MS-VB is connected to the ground, the drain is connected to the power supply through the load, and the regulation of the gate voltage controls the conduction and cutoff of the current. N-channel MOSFET has lower on-resistance in low voltage applications and is suitable for switching control that handles larger currents.
- **Drain-source voltage (VDS)**: 80V
The maximum drain-source voltage of VSD010N08MS-VB is 80V, which is suitable for a variety of power management systems in the low to medium voltage range, especially in electronic circuits that require voltages of 80V or less, and can provide effective switching control.
- **Gate-source voltage (VGS)**: ±20V
The maximum gate-source voltage of this MOSFET is ±20V, which is suitable for most standard drive circuits, ensuring the compatibility and adjustability of the MOSFET in the control circuit.
- **Threshold voltage (Vth)**: 3V
With a threshold voltage of 3V, this MOSFET starts to turn on when the gate voltage exceeds 3V. It has high sensitivity and low switching threshold voltage and is suitable for various low-voltage control applications.
- **On-resistance (RDS(ON))**:
- 5mΩ (VGS = 10V)
VSD010N08MS-VB has a very low on-resistance of only 5mΩ. In high current applications, low on-resistance can effectively reduce power loss and heat generation, and improve system efficiency.
- **Maximum drain current (ID)**: 75A
The maximum drain current is 75A, which is suitable for applications that require high current control. Its high current handling capability ensures stability and reliability in the power system, especially for power systems with high load requirements.
- **Technology type**: Trench
The use of Trench technology can provide low on-resistance and higher switching efficiency. Trench technology helps to reduce the size and conduction loss of MOSFET, making this MOSFET perform well in high-frequency and high-efficiency power applications.
Domain and module applications：
3. **Application fields and module examples:**
- **DC-DC converter**:
VSD010N08MS-VB is very suitable for DC-DC converters, especially in power conversion applications that require high current and high efficiency. Its low on-resistance and high current carrying capacity make it very suitable for battery-powered devices, mobile devices, and industrial power management, which can effectively improve conversion efficiency and reduce heat generation.
- **Power management system**:
In the power management system, VSD010N08MS-VB can be used to control the switching of power supplies, especially voltage stabilization and current control modules. It can provide stable current and voltage regulation in various power circuits, ensuring the efficient operation of the power system and the stable supply of power.
- **Power tools**:
Due to its high current carrying capacity and low power consumption, VSD010N08MS-VB is also suitable for the power control part of high-power power tools. In the drive circuit of power tools, the low on-resistance of MOSFET can ensure high efficiency, extend the service life of the tool, and reduce power loss.
- **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
VSD010N08MS-VB is suitable for battery management systems, drive control and power conversion modules of electric vehicles and hybrid electric vehicles. Its high current handling capability and low on-resistance give it a significant advantage in high-efficiency battery management and power conversion in electric vehicles, which can reduce energy loss and improve system stability.
- **Inverter and UPS (Uninterruptible Power Supply) Systems**:
In inverter and UPS systems, VSD010N08MS-VB can be used as an efficient switching element to ensure maximum power conversion efficiency. Low on-resistance reduces heat loss in high power conversion and keeps the system running efficiently, especially in backup power and efficient power management.
- **Power Battery and Charger Modules**:
VSD010N08MS-VB is also very suitable for use in battery management and charger modules, especially in high-current charging and load regulation. Its low on-resistance and high current handling capability help improve battery charging efficiency, extend battery life, and reduce heat generated during the charging process.
- **Audio Systems and Other Power Amplifiers**:
In audio systems or other power amplifier circuits, VSD010N08MS-VB can be used for high-efficiency power management to ensure the stability of high-power output. Its high current carrying capacity and low on-resistance can improve system efficiency and reduce losses, and is suitable for use in high-power audio amplification and high-power output power systems.
- **DC-DC converter**:
VSD010N08MS-VB is very suitable for DC-DC converters, especially in power conversion applications that require high current and high efficiency. Its low on-resistance and high current carrying capacity make it very suitable for battery-powered devices, mobile devices, and industrial power management, which can effectively improve conversion efficiency and reduce heat generation.
- **Power management system**:
In the power management system, VSD010N08MS-VB can be used to control the switching of power supplies, especially voltage stabilization and current control modules. It can provide stable current and voltage regulation in various power circuits, ensuring the efficient operation of the power system and the stable supply of power.
- **Power tools**:
Due to its high current carrying capacity and low power consumption, VSD010N08MS-VB is also suitable for the power control part of high-power power tools. In the drive circuit of power tools, the low on-resistance of MOSFET can ensure high efficiency, extend the service life of the tool, and reduce power loss.
- **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
VSD010N08MS-VB is suitable for battery management systems, drive control and power conversion modules of electric vehicles and hybrid electric vehicles. Its high current handling capability and low on-resistance give it a significant advantage in high-efficiency battery management and power conversion in electric vehicles, which can reduce energy loss and improve system stability.
- **Inverter and UPS (Uninterruptible Power Supply) Systems**:
In inverter and UPS systems, VSD010N08MS-VB can be used as an efficient switching element to ensure maximum power conversion efficiency. Low on-resistance reduces heat loss in high power conversion and keeps the system running efficiently, especially in backup power and efficient power management.
- **Power Battery and Charger Modules**:
VSD010N08MS-VB is also very suitable for use in battery management and charger modules, especially in high-current charging and load regulation. Its low on-resistance and high current handling capability help improve battery charging efficiency, extend battery life, and reduce heat generated during the charging process.
- **Audio Systems and Other Power Amplifiers**:
In audio systems or other power amplifier circuits, VSD010N08MS-VB can be used for high-efficiency power management to ensure the stability of high-power output. Its high current carrying capacity and low on-resistance can improve system efficiency and reduce losses, and is suitable for use in high-power audio amplification and high-power output power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
