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VSD010C03MC-VB Product details
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VSD010C03MC-VB MOSFET Product Introduction
**VSD010C03MC-VB** is an N+P channel MOSFET with a common drain configuration, packaged in TO252-4L, designed for low voltage, high-efficiency applications. This MOSFET has a drain-source voltage (VDS) range of ±30V, suitable for bipolar voltage applications. Its on-resistance (RDS(ON)) is 7mΩ (N channel) and 25mΩ (P channel) at VGS = 10V, providing low power loss and high efficiency. VSD010C03MC-VB performs well in high current applications (maximum drain current of 65A and -35A), and uses advanced Trench technology, suitable for various power conversion, inverter, DC-DC conversion and other applications.
**VSD010C03MC-VB** is an N+P channel MOSFET with a common drain configuration, packaged in TO252-4L, designed for low voltage, high-efficiency applications. This MOSFET has a drain-source voltage (VDS) range of ±30V, suitable for bipolar voltage applications. Its on-resistance (RDS(ON)) is 7mΩ (N channel) and 25mΩ (P channel) at VGS = 10V, providing low power loss and high efficiency. VSD010C03MC-VB performs well in high current applications (maximum drain current of 65A and -35A), and uses advanced Trench technology, suitable for various power conversion, inverter, DC-DC conversion and other applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | 7/25mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P | ±30V | 1.8/-1.7V | 65/-35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252-4L | Common Drain-N+P |
VSD010C03MC-VB MOSFET Detailed parameter description
- **Package type**: TO252-4L
- **Configuration**: Common drain (N+P channel)
- **VDS (drain-source voltage)**: ±30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**:
- N channel: 1.8V
- P channel: -1.7V
- **RDS(ON) (on-resistance)**:
- N channel: 10mΩ @ VGS = 4.5V, 7mΩ @ VGS = 10V
- P channel: 35mΩ @ VGS = 4.5V, 25mΩ @ VGS = 10V
- **ID (maximum drain current)**:
- N channel: 65A
- P channel: -35A
- **Technology type**: Trench (groove technology)
- **Package type**: TO252-4L
- **Configuration**: Common drain (N+P channel)
- **VDS (drain-source voltage)**: ±30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**:
- N channel: 1.8V
- P channel: -1.7V
- **RDS(ON) (on-resistance)**:
- N channel: 10mΩ @ VGS = 4.5V, 7mΩ @ VGS = 10V
- P channel: 35mΩ @ VGS = 4.5V, 25mΩ @ VGS = 10V
- **ID (maximum drain current)**:
- N channel: 65A
- P channel: -35A
- **Technology type**: Trench (groove technology)
Domain and module applications：
VSD010C03MC-VB MOSFET Applications and Modules
**1. DC-DC Converter**:
VSD010C03MC-VB MOSFET is suitable for the design of DC-DC converters, especially in applications requiring high efficiency and low power consumption. Its low on-resistance enables significant reduction of switching loss and power loss in switch mode power supplies (SMPS), providing stable power output. This MOSFET is particularly suitable for use in high-efficiency voltage regulation, battery charging and power modules.
**2. Inverter and Motor Control**:
In inverter and motor control systems, VSD010C03MC-VB MOSFET can provide efficient power conversion, especially for motor drives, solar inverters and wind power generation systems. Due to its excellent switching characteristics and high current carrying capacity, it can effectively control the starting, operation and speed regulation of the motor, and is suitable for power tools, electric vehicles, etc.
**3. Power Management and Battery Protection**:
In the battery management system (BMS), the dual-channel design of VSD010C03MC-VB MOSFET makes it an ideal choice to effectively manage the flow of positive and negative currents and realize battery charging and discharging protection. It is particularly suitable for electric vehicle (EV) battery management, energy storage system and high-efficiency battery charger design to ensure battery safety and high efficiency.
**4. Bipolar Current Load Application**:
Since this MOSFET adopts N+P channel design, it can withstand bipolar voltage and support positive and negative current flow, which is particularly suitable for applications requiring bipolar current control, such as power reverse protection, bridge circuits and bipolar current switching systems. Such applications are widely used in AC power conversion and power reverse protection circuits.
**5. Automotive Electronics**:
VSD010C03MC-VB MOSFET is also suitable for power management and control in automotive electronic systems, especially in battery management systems (BMS) and motor drive systems in electric and hybrid vehicles. Its high current carrying capacity and low on-resistance enable it to improve the energy efficiency and range of vehicles, provide reliable battery protection and optimize energy conversion.
**1. DC-DC Converter**:
VSD010C03MC-VB MOSFET is suitable for the design of DC-DC converters, especially in applications requiring high efficiency and low power consumption. Its low on-resistance enables significant reduction of switching loss and power loss in switch mode power supplies (SMPS), providing stable power output. This MOSFET is particularly suitable for use in high-efficiency voltage regulation, battery charging and power modules.
**2. Inverter and Motor Control**:
In inverter and motor control systems, VSD010C03MC-VB MOSFET can provide efficient power conversion, especially for motor drives, solar inverters and wind power generation systems. Due to its excellent switching characteristics and high current carrying capacity, it can effectively control the starting, operation and speed regulation of the motor, and is suitable for power tools, electric vehicles, etc.
**3. Power Management and Battery Protection**:
In the battery management system (BMS), the dual-channel design of VSD010C03MC-VB MOSFET makes it an ideal choice to effectively manage the flow of positive and negative currents and realize battery charging and discharging protection. It is particularly suitable for electric vehicle (EV) battery management, energy storage system and high-efficiency battery charger design to ensure battery safety and high efficiency.
**4. Bipolar Current Load Application**:
Since this MOSFET adopts N+P channel design, it can withstand bipolar voltage and support positive and negative current flow, which is particularly suitable for applications requiring bipolar current control, such as power reverse protection, bridge circuits and bipolar current switching systems. Such applications are widely used in AC power conversion and power reverse protection circuits.
**5. Automotive Electronics**:
VSD010C03MC-VB MOSFET is also suitable for power management and control in automotive electronic systems, especially in battery management systems (BMS) and motor drive systems in electric and hybrid vehicles. Its high current carrying capacity and low on-resistance enable it to improve the energy efficiency and range of vehicles, provide reliable battery protection and optimize energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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