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VSD007P06MS-VB Product details
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Product Introduction (VSD007P06MS-VB)
**VSD007P06MS-VB** is a high-performance **single P-channel MOSFET**, which adopts **TO252** package and is designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is **-60V**, which is suitable for systems that require negative power supply voltage. The **threshold voltage (Vth)** of this MOSFET is **-3V**, which can work efficiently at a lower gate-source voltage. **VSD007P06MS-VB** uses advanced **Trench technology** and has a low on-resistance (RDS(ON)). Even at a lower gate-source voltage (VGS=4.5V), RDS(ON) can be maintained at **8mΩ**, and further reduced to **5.5mΩ** at VGS=10V, effectively reducing power loss.
The maximum current of this MOSFET is **-70A**, which can be widely used in high current load drive, DC-DC converter, load switch and battery management system. Its low power loss and low on-resistance make it very suitable for occasions requiring efficient switch control and current regulation.
**VSD007P06MS-VB** is a high-performance **single P-channel MOSFET**, which adopts **TO252** package and is designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is **-60V**, which is suitable for systems that require negative power supply voltage. The **threshold voltage (Vth)** of this MOSFET is **-3V**, which can work efficiently at a lower gate-source voltage. **VSD007P06MS-VB** uses advanced **Trench technology** and has a low on-resistance (RDS(ON)). Even at a lower gate-source voltage (VGS=4.5V), RDS(ON) can be maintained at **8mΩ**, and further reduced to **5.5mΩ** at VGS=10V, effectively reducing power loss.
The maximum current of this MOSFET is **-70A**, which can be widely used in high current load drive, DC-DC converter, load switch and battery management system. Its low power loss and low on-resistance make it very suitable for occasions requiring efficient switch control and current regulation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | 5.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -3V | -70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: VSD007P06MS-VB
- **Package type**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON)）**:
- 8mΩ @ VGS = 4.5V
- 5.5mΩ @ VGS = 10V
- **Maximum current (ID)**: -70A
- **Technology type**: Trench technology
- **Switching speed**: High-speed switch, suitable for high-frequency applications
- **Operating temperature range**: -55°C to +150°C (typical)
- **Thermal resistance**: Optimized thermal resistance design to improve heat dissipation efficiency
- **Model**: VSD007P06MS-VB
- **Package type**: TO252
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON)）**:
- 8mΩ @ VGS = 4.5V
- 5.5mΩ @ VGS = 10V
- **Maximum current (ID)**: -70A
- **Technology type**: Trench technology
- **Switching speed**: High-speed switch, suitable for high-frequency applications
- **Operating temperature range**: -55°C to +150°C (typical)
- **Thermal resistance**: Optimized thermal resistance design to improve heat dissipation efficiency
Domain and module applications：
Applications and module examples
1. **DC-DC converter**:
- **VSD007P06MS-VB** is suitable for **DC-DC converter**, especially in situations where negative power supply voltage control is required. As a P-channel MOSFET, it can be used in synchronous rectifiers (buck/boost converters) to effectively improve power conversion efficiency in systems with large load changes. The low on-resistance minimizes the power loss of the converter, especially in low-voltage, high-current working environments, optimizing overall system performance.
2. **Battery Management System (BMS)**:
- In a battery management system, **VSD007P06MS-VB** can be used for efficient battery charge and discharge control. Due to the low on-resistance and high current carrying capacity (maximum 70A) of this MOSFET, it can provide stable current regulation, reduce energy loss during battery charging and discharging, extend battery life, and improve charging efficiency. This makes it very suitable for power tools, electric vehicles, battery energy storage devices and other fields.
3. **Load Switching and Power Management**:
- The low switching loss and excellent thermal performance of this MOSFET make it very useful in power management and load switching circuits. Especially in applications where high current loads need to be controlled, **VSD007P06MS-VB** can be used as a load switching element to provide efficient current switching function, reduce system power consumption and heat accumulation, and is widely used in communication equipment, home appliances, industrial control systems and other fields.
4. **Electric Drive and Motor Control**:
- Due to its excellent current carrying capacity and low on-resistance, **VSD007P06MS-VB** is also suitable for electric drive and motor control modules. In motor drive systems that require efficient switching operations and precise current control, P-channel MOSFETs can improve the response speed and efficiency of the motor by providing fast current regulation, and are widely used in automation equipment, power tools, robots and electric vehicles.
5. **High-efficiency power conversion and current regulation**:
- This MOSFET can be used in **high-efficiency power conversion** circuits, especially in **reverse current control** and **power regulation**. Low RDS(ON) has lower power loss under high current load, helping to improve the overall efficiency of the power supply. It is widely used in high-performance electronic devices such as servers, industrial power systems, and high-efficiency LED driver power supplies.
6. **High-efficiency power switching applications**:
- **VSD007P06MS-VB** is suitable for **high-efficiency power switching applications**, especially in areas that require negative power and efficient energy conversion. It can be used as a switching element in a power management module and plays an important role in complex power conversion systems, ensuring stable output of the power supply and providing low power consumption and high-efficiency current regulation.
1. **DC-DC converter**:
- **VSD007P06MS-VB** is suitable for **DC-DC converter**, especially in situations where negative power supply voltage control is required. As a P-channel MOSFET, it can be used in synchronous rectifiers (buck/boost converters) to effectively improve power conversion efficiency in systems with large load changes. The low on-resistance minimizes the power loss of the converter, especially in low-voltage, high-current working environments, optimizing overall system performance.
2. **Battery Management System (BMS)**:
- In a battery management system, **VSD007P06MS-VB** can be used for efficient battery charge and discharge control. Due to the low on-resistance and high current carrying capacity (maximum 70A) of this MOSFET, it can provide stable current regulation, reduce energy loss during battery charging and discharging, extend battery life, and improve charging efficiency. This makes it very suitable for power tools, electric vehicles, battery energy storage devices and other fields.
3. **Load Switching and Power Management**:
- The low switching loss and excellent thermal performance of this MOSFET make it very useful in power management and load switching circuits. Especially in applications where high current loads need to be controlled, **VSD007P06MS-VB** can be used as a load switching element to provide efficient current switching function, reduce system power consumption and heat accumulation, and is widely used in communication equipment, home appliances, industrial control systems and other fields.
4. **Electric Drive and Motor Control**:
- Due to its excellent current carrying capacity and low on-resistance, **VSD007P06MS-VB** is also suitable for electric drive and motor control modules. In motor drive systems that require efficient switching operations and precise current control, P-channel MOSFETs can improve the response speed and efficiency of the motor by providing fast current regulation, and are widely used in automation equipment, power tools, robots and electric vehicles.
5. **High-efficiency power conversion and current regulation**:
- This MOSFET can be used in **high-efficiency power conversion** circuits, especially in **reverse current control** and **power regulation**. Low RDS(ON) has lower power loss under high current load, helping to improve the overall efficiency of the power supply. It is widely used in high-performance electronic devices such as servers, industrial power systems, and high-efficiency LED driver power supplies.
6. **High-efficiency power switching applications**:
- **VSD007P06MS-VB** is suitable for **high-efficiency power switching applications**, especially in areas that require negative power and efficient energy conversion. It can be used as a switching element in a power management module and plays an important role in complex power conversion systems, ensuring stable output of the power supply and providing low power consumption and high-efficiency current regulation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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