VSD007N07MS-VB Product details
Product introduction:
**VSD007N07MS-VB** is a high-performance single N-Channel MOSFET in a TO252 package, suitable for power management applications that require high power handling capabilities and low on-resistance. Its maximum drain voltage (V_DS) is 60V, which is suitable for use in medium voltage circuits and provides excellent switching performance. VSD007N07MS-VB uses Trench technology to provide very low on-resistance even at low gate voltages, specifically 12mΩ (V_GS = 4.5V) and 4.5mΩ (V_GS = 10V), making it an ideal choice in high-performance power supply designs. In addition, the maximum drain current of VSD007N07MS-VB is 97A, ensuring stability and reliability in high-current applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-Channel
- **Maximum drain voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON))**:
- 12mΩ @ V_GS = 4.5V
- 4.5mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 97A
- **Technology**: Trench
- **Power loss**: Low on-resistance ensures lower power loss and provides higher energy efficiency.
- **Operating temperature range**: Adapts to a wide temperature range to ensure stable operation even in high temperature environments.
- **Thermal Management**: Adopt optimized Trench technology to provide good thermal performance, reduce heat accumulation, and ensure longer service life and stability.
Domain and module applications:
**1. Power management and voltage conversion**
VSD007N07MS-VB can be widely used in power management systems, especially voltage conversion modules such as boost, buck converters, DC-DC converters, etc. It has low on-resistance and high current handling capability, suitable for use as a switching element in power management systems. Both stable voltage output and dynamic current regulation can be optimized through the efficient switching characteristics of this MOSFET.
**2. Battery Management System (BMS)**
In the battery management system (BMS), VSD007N07MS-VB, as a high-efficiency switching element, can effectively manage the battery charging and discharging process. Its low on-resistance characteristics not only reduce power loss, but also ensure the stability of the battery during charging and discharging. Especially in power tools, electric vehicles and renewable energy storage systems with high power requirements, this MOSFET provides an ideal current switching solution.
**3. Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the drive power supply of electric vehicles and hybrid electric vehicles, the VSD007N07MS-VB can be used as a switching element in the motor drive circuit. Its high current handling capability (maximum drain current 97A) enables it to effectively control the power supply of the motor and improve the efficiency and stability of the drive system. At the same time, due to its low R_DS(ON), this MOSFET also helps reduce power losses and improve the overall efficiency of the system.
**4. Industrial Power Supply**
VSD007N07MS-VB is also suitable for various industrial power supply applications, especially in environments that require high current and high efficiency. For example, it is used in systems such as industrial motor control, automation equipment, and power inverters. Its low R_DS(ON) and high current handling capability enable it to effectively manage high power currents and maintain system stability, ensuring efficient operation of industrial electrical equipment.
**5. LED drive circuit**
This MOSFET is also suitable for LED drive circuits. LED drive circuits usually require efficient current regulation and stable power supply. With its low on-resistance and high current capability, the VSD007N07MS-VB provides excellent efficiency when driving LEDs with excessively high current. It can also improve the performance of the entire lighting system by reducing power loss and extending battery life.
**6. Computer and communication equipment**
In high-performance computer power supplies and communication equipment, the VSD007N07MS-VB can be used as a core switching element in power conversion and management modules. Its low R_DS(ON) and high current handling capability can meet the needs of these devices for stable and efficient power supplies, especially providing reliable power supply under high load conditions.
Technical support:
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