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VSD003N06HS-VB Product details
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VSD003N06HS-VB MOSFET Product Introduction
**VSD003N06HS-VB** is a high-performance single N-type MOSFET in TO252 package, designed for low voltage and high current applications. With a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 97A, this MOSFET is suitable for applications requiring high power and high efficiency. Its on-resistance (RDS(ON)) is 4.5mΩ at VGS = 10V, which can significantly reduce power loss and improve the overall energy efficiency of the system. VSD003N06HS-VB uses advanced Trench technology to provide excellent switching performance, and is particularly suitable for applications in power management, motor drive and battery management.
**VSD003N06HS-VB** is a high-performance single N-type MOSFET in TO252 package, designed for low voltage and high current applications. With a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 97A, this MOSFET is suitable for applications requiring high power and high efficiency. Its on-resistance (RDS(ON)) is 4.5mΩ at VGS = 10V, which can significantly reduce power loss and improve the overall energy efficiency of the system. VSD003N06HS-VB uses advanced Trench technology to provide excellent switching performance, and is particularly suitable for applications in power management, motor drive and battery management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
VSD003N06HS-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-type channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**:
- 12mΩ @ VGS = 4.5V
- 4.5mΩ @ VGS = 10V
- **ID (maximum drain current)**: 97A
- **Technology type**: Trench (slot technology)
- **Package type**: TO252
- **Configuration**: Single N-type channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**:
- 12mΩ @ VGS = 4.5V
- 4.5mΩ @ VGS = 10V
- **ID (maximum drain current)**: 97A
- **Technology type**: Trench (slot technology)
Domain and module applications：
VSD003N06HS-VB MOSFET Applications and Modules
**1. Power Management and DC-DC Converters**:
VSD003N06HS-VB MOSFET is widely used in power management systems, especially in high-efficiency DC-DC converters. Its low on-resistance and high current carrying capacity make it an ideal choice for power supply designs with high power density. This MOSFET can significantly improve power conversion efficiency and reduce power loss, and is suitable for various battery-powered devices, portable electronic products, LED driver power supplies and other fields.
**2. Motor Drive and Industrial Automation**:
In motor drive systems, VSD003N06HS-VB MOSFET is widely used in low-voltage, high-current applications. Due to its excellent switching characteristics and low on-resistance, it can effectively improve the working efficiency of the motor and reduce heat loss. This MOSFET can be used in power tools, motor control systems, electric vehicles and robot drive modules to provide efficient and reliable current control.
**3. Battery Management System (BMS) and Energy Storage System**:
VSD003N06HS-VB plays an important role in battery management system (BMS) and energy storage system, especially in electric vehicles (EV) and solar energy storage system (ESS). Its excellent conduction characteristics and high current carrying capacity enable it to efficiently manage the battery charging and discharging process, provide stable battery protection and optimize energy conversion efficiency. This MOSFET has a wide range of applications in battery protection, load balancing and current control.
**4. Uninterruptible Power Supply (UPS) and Power Backup System**:
VSD003N06HS-VB is also widely used in uninterruptible power supply (UPS) systems and power backup solutions. In these applications, this MOSFET can provide continuous current supply when the power is off, and has a low on-resistance, which can effectively reduce power loss and ensure efficient operation of the equipment. This MOSFET has important applications in data centers, communication base stations and critical power infrastructure.
**5. Automotive Electronics and Electric Vehicles**:
In automotive electronic systems, especially in electric vehicles (EV) and hybrid electric vehicles (HEV), VSD003N06HS-VB MOSFET provides efficient battery management and motor control functions. It enables efficient energy conversion and optimization of electric drive systems. This MOSFET plays an important role in the battery pack, charging management system and energy recovery system of electric vehicles, providing vehicles with higher energy utilization and longer driving range.
**1. Power Management and DC-DC Converters**:
VSD003N06HS-VB MOSFET is widely used in power management systems, especially in high-efficiency DC-DC converters. Its low on-resistance and high current carrying capacity make it an ideal choice for power supply designs with high power density. This MOSFET can significantly improve power conversion efficiency and reduce power loss, and is suitable for various battery-powered devices, portable electronic products, LED driver power supplies and other fields.
**2. Motor Drive and Industrial Automation**:
In motor drive systems, VSD003N06HS-VB MOSFET is widely used in low-voltage, high-current applications. Due to its excellent switching characteristics and low on-resistance, it can effectively improve the working efficiency of the motor and reduce heat loss. This MOSFET can be used in power tools, motor control systems, electric vehicles and robot drive modules to provide efficient and reliable current control.
**3. Battery Management System (BMS) and Energy Storage System**:
VSD003N06HS-VB plays an important role in battery management system (BMS) and energy storage system, especially in electric vehicles (EV) and solar energy storage system (ESS). Its excellent conduction characteristics and high current carrying capacity enable it to efficiently manage the battery charging and discharging process, provide stable battery protection and optimize energy conversion efficiency. This MOSFET has a wide range of applications in battery protection, load balancing and current control.
**4. Uninterruptible Power Supply (UPS) and Power Backup System**:
VSD003N06HS-VB is also widely used in uninterruptible power supply (UPS) systems and power backup solutions. In these applications, this MOSFET can provide continuous current supply when the power is off, and has a low on-resistance, which can effectively reduce power loss and ensure efficient operation of the equipment. This MOSFET has important applications in data centers, communication base stations and critical power infrastructure.
**5. Automotive Electronics and Electric Vehicles**:
In automotive electronic systems, especially in electric vehicles (EV) and hybrid electric vehicles (HEV), VSD003N06HS-VB MOSFET provides efficient battery management and motor control functions. It enables efficient energy conversion and optimization of electric drive systems. This MOSFET plays an important role in the battery pack, charging management system and energy recovery system of electric vehicles, providing vehicles with higher energy utilization and longer driving range.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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