中文
English
VS8068ATD-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction: VS8068ATD-VB**
VS8068ATD-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high power and high current applications. With a maximum drain-source voltage (VDS) of 80V and a maximum drain current (ID) of 120A, this MOSFET can provide excellent performance in high current environments. Its low on-resistance (RDS(ON)) enables it to perform well in efficient power management and switching applications, especially in power systems that require low power loss and high efficiency. Using Trench technology, VS8068ATD-VB can effectively reduce heat accumulation in the system while providing fast switching speeds, thereby improving overall system efficiency.
VS8068ATD-VB is a high-performance single N-channel MOSFET in TO263 package, designed for high power and high current applications. With a maximum drain-source voltage (VDS) of 80V and a maximum drain current (ID) of 120A, this MOSFET can provide excellent performance in high current environments. Its low on-resistance (RDS(ON)) enables it to perform well in efficient power management and switching applications, especially in power systems that require low power loss and high efficiency. Using Trench technology, VS8068ATD-VB can effectively reduce heat accumulation in the system while providing fast switching speeds, thereby improving overall system efficiency.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. **Detailed parameter description: **
- **Package type**: TO263
The TO263 package is suitable for high current and high power applications. It has good heat dissipation performance and can effectively conduct the generated heat away, thereby maintaining the stable operation of the MOSFET.
- **Configuration**: Single N-channel MOSFET
Adopting a single N-channel structure, this MOSFET provides low on-resistance and excellent current carrying capacity, and is widely used in high-efficiency power conversion, power management and drive circuits.
- **Drain-source voltage (VDS)**: 80V
The maximum drain-source voltage is 80V, which is suitable for common power systems such as 48V, 24V, and 12V, and can meet the needs of high-efficiency power conversion in the medium voltage range.
- **Gate-source voltage (VGS)**: ±20V
The maximum gate-source voltage is ±20V, which is compatible with most controllers and suitable for various power control and drive circuits.
- **Threshold voltage (Vth)**: 3V
The threshold voltage of this MOSFET is 3V, which ensures that it can be turned on at a lower gate voltage and is suitable for a variety of low-voltage control circuits.
- **On-resistance (RDS(ON))**:
- 10mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
Low on-resistance can significantly reduce power loss, thereby improving system efficiency and reducing heat generation. This feature makes it an important advantage in high-efficiency power systems.
- **Maximum drain current (ID)**: 120A
This MOSFET can carry a maximum drain current of 120A, which is suitable for high-current, high-power power applications and provides stable current output.
- **Technology Type**: Trench
Trench technology is the manufacturing process of this MOSFET, which improves efficiency by reducing on-resistance and increasing switching speed. This technology allows MOSFET to maintain low conduction losses even at high frequency operation.
- **Package type**: TO263
The TO263 package is suitable for high current and high power applications. It has good heat dissipation performance and can effectively conduct the generated heat away, thereby maintaining the stable operation of the MOSFET.
- **Configuration**: Single N-channel MOSFET
Adopting a single N-channel structure, this MOSFET provides low on-resistance and excellent current carrying capacity, and is widely used in high-efficiency power conversion, power management and drive circuits.
- **Drain-source voltage (VDS)**: 80V
The maximum drain-source voltage is 80V, which is suitable for common power systems such as 48V, 24V, and 12V, and can meet the needs of high-efficiency power conversion in the medium voltage range.
- **Gate-source voltage (VGS)**: ±20V
The maximum gate-source voltage is ±20V, which is compatible with most controllers and suitable for various power control and drive circuits.
- **Threshold voltage (Vth)**: 3V
The threshold voltage of this MOSFET is 3V, which ensures that it can be turned on at a lower gate voltage and is suitable for a variety of low-voltage control circuits.
- **On-resistance (RDS(ON))**:
- 10mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
Low on-resistance can significantly reduce power loss, thereby improving system efficiency and reducing heat generation. This feature makes it an important advantage in high-efficiency power systems.
- **Maximum drain current (ID)**: 120A
This MOSFET can carry a maximum drain current of 120A, which is suitable for high-current, high-power power applications and provides stable current output.
- **Technology Type**: Trench
Trench technology is the manufacturing process of this MOSFET, which improves efficiency by reducing on-resistance and increasing switching speed. This technology allows MOSFET to maintain low conduction losses even at high frequency operation.
Domain and module applications：
3. **Application fields and module examples:**
- **DC-DC converter**:
VS8068ATD-VB is suitable for high-efficiency DC-DC converters, especially in applications that require high current conversion. Due to its low on-resistance and high current carrying capacity, it can reduce losses during voltage conversion and improve overall system efficiency. It is widely used in communication equipment, battery management systems, industrial power supplies and other fields.
- **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
VS8068ATD-VB plays a vital role in the battery management and power drive systems of electric vehicles and hybrid vehicles. It can be used for battery charge and discharge control, motor drive, and efficient power management modules. Its high current carrying capacity and low power loss characteristics help extend battery life and improve overall energy efficiency.
- **Inverter and Power Factor Correction (PFC) Circuits**:
This MOSFET can be widely used in solar inverters, uninterruptible power supplies (UPS) and other power factor correction circuits to help improve power conversion efficiency and reduce energy loss. Especially in high current applications, the VS8068ATD-VB can maintain stable performance and reduce heat accumulation.
- **Power Management and Driver Circuits**:
In various power management modules, the VS8068ATD-VB is used for efficient power switching and current control, suitable for power tools, battery chargers, lighting power supplies and industrial power systems. Low on-resistance and high switching speed make it extremely valuable in these fields.
- **LED Driver and Lighting Applications**:
In LED driver power supplies, the VS8068ATD-VB provides stable current and power conversion. It has a wide range of applications in high-power LED lighting, automotive lighting systems and high-power LED lighting modules, and is particularly suitable for scenarios that require high current and low loss.
- **Wireless power systems and consumer electronics devices**:
This MOSFET can be used in power management modules for wireless power transmission and high-efficiency consumer electronics devices, and is suitable for portable devices and wireless charging systems that require efficient conversion and low power consumption.
- **Industrial automation and control systems**:
VS8068ATD-VB can be widely used in power modules, robot control systems and programmable logic controllers (PLCs) in industrial automation systems. Its high current handling capability and low power loss make it ideal for demanding industrial power systems.
- **DC-DC converter**:
VS8068ATD-VB is suitable for high-efficiency DC-DC converters, especially in applications that require high current conversion. Due to its low on-resistance and high current carrying capacity, it can reduce losses during voltage conversion and improve overall system efficiency. It is widely used in communication equipment, battery management systems, industrial power supplies and other fields.
- **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**:
VS8068ATD-VB plays a vital role in the battery management and power drive systems of electric vehicles and hybrid vehicles. It can be used for battery charge and discharge control, motor drive, and efficient power management modules. Its high current carrying capacity and low power loss characteristics help extend battery life and improve overall energy efficiency.
- **Inverter and Power Factor Correction (PFC) Circuits**:
This MOSFET can be widely used in solar inverters, uninterruptible power supplies (UPS) and other power factor correction circuits to help improve power conversion efficiency and reduce energy loss. Especially in high current applications, the VS8068ATD-VB can maintain stable performance and reduce heat accumulation.
- **Power Management and Driver Circuits**:
In various power management modules, the VS8068ATD-VB is used for efficient power switching and current control, suitable for power tools, battery chargers, lighting power supplies and industrial power systems. Low on-resistance and high switching speed make it extremely valuable in these fields.
- **LED Driver and Lighting Applications**:
In LED driver power supplies, the VS8068ATD-VB provides stable current and power conversion. It has a wide range of applications in high-power LED lighting, automotive lighting systems and high-power LED lighting modules, and is particularly suitable for scenarios that require high current and low loss.
- **Wireless power systems and consumer electronics devices**:
This MOSFET can be used in power management modules for wireless power transmission and high-efficiency consumer electronics devices, and is suitable for portable devices and wireless charging systems that require efficient conversion and low power consumption.
- **Industrial automation and control systems**:
VS8068ATD-VB can be widely used in power modules, robot control systems and programmable logic controllers (PLCs) in industrial automation systems. Its high current handling capability and low power loss make it ideal for demanding industrial power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
