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VS80110ATD-VB Product details
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VS80110ATD-VB Product Introduction
VS80110ATD-VB is a high-performance N-type MOSFET in TO263 package, designed for high-power applications, suitable for applications requiring high current and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 80V, the maximum gate-source voltage (VGS) can withstand ±20V, and the threshold voltage (Vth) is 3V. With its excellent low on-resistance (RDS(ON)), it is 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, which enables efficient current transmission. VS80110ATD-VB has a strong current carrying capacity (maximum drain current ID is 120A) and adopts advanced trench technology. It is suitable for various applications requiring high efficiency and high reliability, such as power management systems, electric drive systems and load switch modules.
VS80110ATD-VB is a high-performance N-type MOSFET in TO263 package, designed for high-power applications, suitable for applications requiring high current and low on-resistance. The maximum drain-source voltage (VDS) of this MOSFET is 80V, the maximum gate-source voltage (VGS) can withstand ±20V, and the threshold voltage (Vth) is 3V. With its excellent low on-resistance (RDS(ON)), it is 10mΩ at VGS=4.5V and 6mΩ at VGS=10V, which enables efficient current transmission. VS80110ATD-VB has a strong current carrying capacity (maximum drain current ID is 120A) and adopts advanced trench technology. It is suitable for various applications requiring high efficiency and high reliability, such as power management systems, electric drive systems and load switch modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
VS80110ATD-VB Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-type MOSFET (Single-N-Channel)
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Rated drain current (ID)**: 120A
- **Technology**: Trench
- **Maximum power dissipation (Ptot)**: 150W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum switching frequency**: 50MHz (may vary depending on load and cooling)
- **Package**: TO263
- **Configuration**: Single N-type MOSFET (Single-N-Channel)
- **Maximum drain-source voltage (VDS)**: 80V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Rated drain current (ID)**: 120A
- **Technology**: Trench
- **Maximum power dissipation (Ptot)**: 150W (depending on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum switching frequency**: 50MHz (may vary depending on load and cooling)
Domain and module applications：
Application fields and modules
1. **Power management system**
VS80110ATD-VB is widely used in power management systems, especially in high-efficiency DC-DC converters, AC-DC power supplies, inverters, and voltage regulators. Its low on-resistance characteristics ensure efficient current transmission, thereby reducing energy loss and heat generation, allowing the system to operate stably in high-efficiency mode, especially suitable for power modules that require high current and low loss.
2. **Electric drive system**
This MOSFET is also very suitable for electric drive systems, such as power tools, electric vehicle (EV) motor drive systems, and battery management systems (BMS). Due to its excellent current carrying capacity (120A), VS80110ATD-VB can efficiently switch high-power loads in electric drive systems and effectively manage the charging and discharging process of the battery. By reducing the on-resistance, the energy efficiency of the drive system is optimized, and the endurance and reliability of the electric drive system are improved.
3. **Load Switch and Current Control**
In load switch applications, VS80110ATD-VB can achieve efficient and fast current switching, especially in load management systems that require high current carrying and fast response. For example, it can be used as a switch for batteries or high-power power supplies to achieve precise current control by controlling the switch or adjusting the load. This function is widely used in various communication equipment, power distribution systems, and automation control systems.
4. **LED Drive and Lighting System**
VS80110ATD-VB is suitable for LED drive and lighting systems, especially the drive circuit of high-power LED lighting equipment. Due to its ultra-low on-resistance, it can effectively control the current of the LED, ensure efficient light source output, and reduce heat accumulation. For high-power or large-area lighting systems, VS80110ATD-VB provides low-loss and long-life operating conditions, suitable for industrial, commercial and home lighting fields.
5. **Industrial Automation and Motor Control**
In industrial automation systems, the VS80110ATD-VB can be used for motor drives, robot control, and other high-power electronic devices. Its strong current carrying capacity and low on-resistance make it an ideal choice for driving high-current loads. Applied to servo motor drives, motor control systems, and precision control systems for robots, this MOSFET can ensure efficient and stable operation of the equipment, especially in situations where there are strict requirements on response speed and efficiency.
6. **Communication Equipment and Data Center**
This MOSFET is also suitable for power management modules in various communication equipment. Due to its excellent switching performance and current carrying capacity, it is able to provide a stable current supply in high-speed signal processing and high-power systems. In addition, the VS80110ATD-VB can be widely used in data centers, network equipment, and other communication systems with high-efficiency requirements to ensure stable and efficient power support under high-load environments.
1. **Power management system**
VS80110ATD-VB is widely used in power management systems, especially in high-efficiency DC-DC converters, AC-DC power supplies, inverters, and voltage regulators. Its low on-resistance characteristics ensure efficient current transmission, thereby reducing energy loss and heat generation, allowing the system to operate stably in high-efficiency mode, especially suitable for power modules that require high current and low loss.
2. **Electric drive system**
This MOSFET is also very suitable for electric drive systems, such as power tools, electric vehicle (EV) motor drive systems, and battery management systems (BMS). Due to its excellent current carrying capacity (120A), VS80110ATD-VB can efficiently switch high-power loads in electric drive systems and effectively manage the charging and discharging process of the battery. By reducing the on-resistance, the energy efficiency of the drive system is optimized, and the endurance and reliability of the electric drive system are improved.
3. **Load Switch and Current Control**
In load switch applications, VS80110ATD-VB can achieve efficient and fast current switching, especially in load management systems that require high current carrying and fast response. For example, it can be used as a switch for batteries or high-power power supplies to achieve precise current control by controlling the switch or adjusting the load. This function is widely used in various communication equipment, power distribution systems, and automation control systems.
4. **LED Drive and Lighting System**
VS80110ATD-VB is suitable for LED drive and lighting systems, especially the drive circuit of high-power LED lighting equipment. Due to its ultra-low on-resistance, it can effectively control the current of the LED, ensure efficient light source output, and reduce heat accumulation. For high-power or large-area lighting systems, VS80110ATD-VB provides low-loss and long-life operating conditions, suitable for industrial, commercial and home lighting fields.
5. **Industrial Automation and Motor Control**
In industrial automation systems, the VS80110ATD-VB can be used for motor drives, robot control, and other high-power electronic devices. Its strong current carrying capacity and low on-resistance make it an ideal choice for driving high-current loads. Applied to servo motor drives, motor control systems, and precision control systems for robots, this MOSFET can ensure efficient and stable operation of the equipment, especially in situations where there are strict requirements on response speed and efficiency.
6. **Communication Equipment and Data Center**
This MOSFET is also suitable for power management modules in various communication equipment. Due to its excellent switching performance and current carrying capacity, it is able to provide a stable current supply in high-speed signal processing and high-power systems. In addition, the VS80110ATD-VB can be widely used in data centers, network equipment, and other communication systems with high-efficiency requirements to ensure stable and efficient power support under high-load environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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