VS7N65AI-VB Product details
Product introduction:
**VS7N65AI-VB** is a **single N-channel MOSFET** in **TO251** package, specially designed for high voltage applications. The **drain-source voltage (VDS)** of this MOSFET reaches **650V**, and the maximum **drain current (ID)** is **5A**, which is suitable for switching circuits that require high voltage resistance, high efficiency and high stability. VS7N65AI-VB adopts **SJ_Multi-EPI technology**, which is characterized by high voltage resistance while ensuring low on-resistance (RDS(ON)). When **VGS=10V**, **RDS(ON)** is **950mΩ**, which enables it to maintain low power consumption and good thermal management performance in high voltage applications. It is suitable for various power electronic equipment that require high voltage tolerance, low loss and reliability.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
| **Parameter** | **Description** |
|------------------------|--------------------------------|
| **Package type** | TO251 |
| **Configuration** | Single N-channel MOSFET (Single-N-Channel)|
| **VDS (drain-source voltage)** | 650V |
| **VGS (gate-source voltage)** | ±30V |
| **Vth (threshold voltage)** | 3.5V |
| **RDS(ON) (on-resistance)** | 950mΩ (VGS=10V) |
| **ID (maximum drain current)** | 5A |
| **Technology** | SJ_Multi-EPI technology|
Domain and module applications:
1. **High voltage power management**:
Due to its **650V drain-source voltage**, the VS7N65AI-VB performs well in **high voltage power management systems**. It is particularly suitable for high voltage DC power supplies (such as DC-DC converters, power modules, etc.), and can effectively control the flow of current in high voltage environments, maintain high efficiency and low power consumption, and is suitable for **power electronic equipment, industrial power supplies** and **power conversion modules in power systems**.
2. **Inverter and electric drive system**:
Due to the VS7N65AI-VB's ability to withstand high voltages and provide stable switching characteristics, it is suitable for **inverter systems**, especially in **solar inverters** and **electric drive systems**. This MOSFET can effectively operate under high frequency and high voltage conditions, and is widely used in electric vehicle (EV) drives, wind power generation systems, and other fields that require high voltage conversion.
3. **Home appliance power supply and battery management**:
The high voltage resistance performance of VS7N65AI-VB makes it widely used in **home appliance power supply** and **battery management system (BMS)**. In **home appliance control system**, it can provide efficient current switching and voltage conversion, while in **battery management system**, it can effectively control the battery charging and discharging process to ensure the safety and performance of the battery, suitable for smart home, UPS system, etc.
4. **Industrial automation and power control system**:
The high voltage tolerance of VS7N65AI-VB makes it very suitable for **industrial automation control systems**, such as **inverters**, **motor drive systems**, and **industrial switching power supplies**. In these high-voltage, high-current load control systems, it can effectively regulate and control the current flow to ensure that the system operates under efficient and stable conditions. Especially in **power control systems** and **smart factory equipment**, it can provide efficient power conversion and control.
5. **Power transmission and distribution system**:
In **power transmission and distribution system**, VS7N65AI-VB can effectively carry and regulate high voltage current with its high VDS and high reliability, and is widely used in **power switchgear**, **distribution equipment** and other high voltage power management systems. This MOSFET can be used as a switching element to control the start and stop of high voltage circuits, providing efficient energy conversion and management.
6. **Power factor correction (PFC) circuit**:
In **power factor correction (PFC) circuit**, VS7N65AI-VB can provide stable and efficient switching operation for the power supply. Its high voltage tolerance and low on-resistance make it perform well in PFC applications that require high efficiency and low heat. This MOSFET can provide precise current control for modern power systems (such as AC-DC converters, power conditioners, etc.) and optimize the power factor of the power supply.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image