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VS6888BTD-VB Product details
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Product Introduction (VS6888BTD-VB)
**VS6888BTD-VB** is a single N-channel MOSFET in a TO263 package, designed for high-efficiency power management and high-current applications. With a drain-source voltage (VDS) of 60V and a maximum continuous drain current (ID) of up to 150A, this MOSFET is suitable for high-power systems. Its low on-resistance (RDS(ON)) of 4mΩ (VGS=10V) helps reduce energy losses and improve overall system efficiency. Using Trench technology, the VS6888BTD-VB provides extremely low switching losses and excellent current switching capabilities, suitable for power electronic devices with high frequency and high current requirements.
The threshold voltage (Vth) of this MOSFET is 3V, which can work efficiently within the standard drive voltage range and adapt to a wide range of control requirements. Its excellent thermal performance and low thermal resistance characteristics enable it to operate stably under high power loads and harsh environmental conditions, making it particularly suitable for high-power power conversion and motor control systems.
**VS6888BTD-VB** is a single N-channel MOSFET in a TO263 package, designed for high-efficiency power management and high-current applications. With a drain-source voltage (VDS) of 60V and a maximum continuous drain current (ID) of up to 150A, this MOSFET is suitable for high-power systems. Its low on-resistance (RDS(ON)) of 4mΩ (VGS=10V) helps reduce energy losses and improve overall system efficiency. Using Trench technology, the VS6888BTD-VB provides extremely low switching losses and excellent current switching capabilities, suitable for power electronic devices with high frequency and high current requirements.
The threshold voltage (Vth) of this MOSFET is 3V, which can work efficiently within the standard drive voltage range and adapt to a wide range of control requirements. Its excellent thermal performance and low thermal resistance characteristics enable it to operate stably under high power loads and harsh environmental conditions, making it particularly suitable for high-power power conversion and motor control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: VS6888BTD-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 150A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C (typical)
- **Switching speed**: High-speed switching, suitable for high-frequency applications
- **Thermal resistance**: Low thermal resistance design to ensure better heat dissipation performance
- **Model**: VS6888BTD-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 10V
- **Maximum continuous current (ID)**: 150A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C to +150°C (typical)
- **Switching speed**: High-speed switching, suitable for high-frequency applications
- **Thermal resistance**: Low thermal resistance design to ensure better heat dissipation performance
Domain and module applications：
Applications and module examples
1. **High-power power management system**:
- **VS6888BTD-VB** is widely used in high-power power systems, such as industrial power supplies, server power supplies, UPS (uninterruptible power supply) systems, and DC-DC converters. Its low RDS(ON) can effectively reduce power loss and heat generation, improve system efficiency, and is particularly suitable for power modules with high current and high power requirements. This MOSFET can work stably under higher current loads, optimizing the overall efficiency and stability of the power supply.
2. **Motor control systems (including electric vehicles and industrial drives)**:
- In motor drive systems, especially electric vehicles (EVs) and industrial automation control systems, **VS6888BTD-VB** can effectively control the start, stop and speed regulation of the motor as a power switching device. Its low on-resistance characteristic reduces the energy loss generated during the motor drive process, thereby improving the drive efficiency and the response speed of the system. The large current capacity makes it suitable for high-power motor control, especially in situations requiring high power density and long-term stable operation.
3. **Battery Management System (BMS)**:
- **VS6888BTD-VB** is suitable for battery management systems (BMS), especially in electric vehicles (EV) and energy storage systems. The MOSFET can provide stable control during fast charging and discharging, reduce battery loss and improve charging efficiency. In terms of battery protection, balancing and monitoring, the low on-resistance of the MOSFET helps to improve the efficiency of the battery system and reduce heat generation, thereby improving battery life and performance.
4. **Solar Inverters and Renewable Energy Systems**:
- In renewable energy systems such as solar inverters and wind power, **VS6888BTD-VB** is widely used in power conversion modules. Due to its low on-resistance and efficient switching characteristics, VS6888BTD-VB can reduce losses in energy conversion and improve overall conversion efficiency. This is particularly important for solar power generation systems, especially when converting large amounts of DC to AC. The high efficiency provided by VS6888BTD-VB helps optimize energy utilization and reduce heat loss in the system.
5. **Power Factor Correction (PFC)**:
- In power factor correction (PFC) circuits, **VS6888BTD-VB** can be used to improve the quality of input current and the efficiency of power transmission. Its low RDS(ON) enables the power factor correction circuit to work efficiently, reduce energy loss, and improve the overall efficiency of the power conversion process. The high current carrying capacity and efficient switching characteristics of MOSFET make it an ideal choice for high-power applications, especially for AC-DC power modules.
6. **High-Frequency Power Conversion and Inverter**:
- **VS6888BTD-VB** is suitable for applications such as high-frequency power conversion and inverter, such as AC and DC conversion systems in electrical equipment. Its excellent switching performance and low on-resistance can reduce switching losses, optimize efficiency and reduce heat generation during high-frequency conversion. In power modules, especially high-power power conversion systems, VS6888BTD-VB can significantly improve system stability and long-term reliability.
7. **Consumer Electronics and Communication Equipment**:
- **VS6888BTD-VB** is also suitable for consumer electronics and communication equipment, especially in power management systems that require high current and high frequency switching. In these applications, the low RDS(ON) and efficient switching characteristics of MOSFET help improve system performance, extend the life of the equipment and reduce power consumption. It is widely used in power modules for high-end computers, telecommunications equipment and mobile devices.
1. **High-power power management system**:
- **VS6888BTD-VB** is widely used in high-power power systems, such as industrial power supplies, server power supplies, UPS (uninterruptible power supply) systems, and DC-DC converters. Its low RDS(ON) can effectively reduce power loss and heat generation, improve system efficiency, and is particularly suitable for power modules with high current and high power requirements. This MOSFET can work stably under higher current loads, optimizing the overall efficiency and stability of the power supply.
2. **Motor control systems (including electric vehicles and industrial drives)**:
- In motor drive systems, especially electric vehicles (EVs) and industrial automation control systems, **VS6888BTD-VB** can effectively control the start, stop and speed regulation of the motor as a power switching device. Its low on-resistance characteristic reduces the energy loss generated during the motor drive process, thereby improving the drive efficiency and the response speed of the system. The large current capacity makes it suitable for high-power motor control, especially in situations requiring high power density and long-term stable operation.
3. **Battery Management System (BMS)**:
- **VS6888BTD-VB** is suitable for battery management systems (BMS), especially in electric vehicles (EV) and energy storage systems. The MOSFET can provide stable control during fast charging and discharging, reduce battery loss and improve charging efficiency. In terms of battery protection, balancing and monitoring, the low on-resistance of the MOSFET helps to improve the efficiency of the battery system and reduce heat generation, thereby improving battery life and performance.
4. **Solar Inverters and Renewable Energy Systems**:
- In renewable energy systems such as solar inverters and wind power, **VS6888BTD-VB** is widely used in power conversion modules. Due to its low on-resistance and efficient switching characteristics, VS6888BTD-VB can reduce losses in energy conversion and improve overall conversion efficiency. This is particularly important for solar power generation systems, especially when converting large amounts of DC to AC. The high efficiency provided by VS6888BTD-VB helps optimize energy utilization and reduce heat loss in the system.
5. **Power Factor Correction (PFC)**:
- In power factor correction (PFC) circuits, **VS6888BTD-VB** can be used to improve the quality of input current and the efficiency of power transmission. Its low RDS(ON) enables the power factor correction circuit to work efficiently, reduce energy loss, and improve the overall efficiency of the power conversion process. The high current carrying capacity and efficient switching characteristics of MOSFET make it an ideal choice for high-power applications, especially for AC-DC power modules.
6. **High-Frequency Power Conversion and Inverter**:
- **VS6888BTD-VB** is suitable for applications such as high-frequency power conversion and inverter, such as AC and DC conversion systems in electrical equipment. Its excellent switching performance and low on-resistance can reduce switching losses, optimize efficiency and reduce heat generation during high-frequency conversion. In power modules, especially high-power power conversion systems, VS6888BTD-VB can significantly improve system stability and long-term reliability.
7. **Consumer Electronics and Communication Equipment**:
- **VS6888BTD-VB** is also suitable for consumer electronics and communication equipment, especially in power management systems that require high current and high frequency switching. In these applications, the low RDS(ON) and efficient switching characteristics of MOSFET help improve system performance, extend the life of the equipment and reduce power consumption. It is widely used in power modules for high-end computers, telecommunications equipment and mobile devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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