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VS5812AI-VB Product details
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Product Introduction: VS5812AI-VB MOSFET
VS5812AI-VB is a single N-channel MOSFET in TO251 package, designed for high-efficiency current switching and power management applications. This MOSFET has a maximum drain-source voltage (VDS) of 60V, a maximum drain current (ID) of 55A, and a gate-source voltage (VGS) of ±20V, which is suitable for high-current and high-frequency power conversion and current control applications. Its on-resistance (RDS(ON)) is as low as 12mΩ at VGS=10V, ensuring extremely low power loss and efficient current transmission. VS5812AI-VB uses Trench technology, which provides excellent switching performance and low on-resistance, making it excellent in a variety of applications such as high-efficiency power management, power tools, battery charging and discharging, and industrial drive systems.
This MOSFET is very suitable for power conversion, power amplification, and electrical drive modules that require high current carrying capacity, especially in areas requiring high efficiency and low energy loss. Its low RDS(ON) and high current carrying capability make it ideal for a variety of industrial, consumer electronics, and battery-powered systems.
VS5812AI-VB is a single N-channel MOSFET in TO251 package, designed for high-efficiency current switching and power management applications. This MOSFET has a maximum drain-source voltage (VDS) of 60V, a maximum drain current (ID) of 55A, and a gate-source voltage (VGS) of ±20V, which is suitable for high-current and high-frequency power conversion and current control applications. Its on-resistance (RDS(ON)) is as low as 12mΩ at VGS=10V, ensuring extremely low power loss and efficient current transmission. VS5812AI-VB uses Trench technology, which provides excellent switching performance and low on-resistance, making it excellent in a variety of applications such as high-efficiency power management, power tools, battery charging and discharging, and industrial drive systems.
This MOSFET is very suitable for power conversion, power amplification, and electrical drive modules that require high current carrying capacity, especially in areas requiring high efficiency and low energy loss. Its low RDS(ON) and high current carrying capability make it ideal for a variety of industrial, consumer electronics, and battery-powered systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 60V | 1.7V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
Detailed parameter description
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Drain current (ID)**: 55A
- **Technology**: Trench
- **Maximum operating temperature**: 85°C (Specific ambient temperature and application conditions may vary, please refer to the data sheet for details)
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS = 4.5V
- 12mΩ @ VGS = 10V
- **Drain current (ID)**: 55A
- **Technology**: Trench
- **Maximum operating temperature**: 85°C (Specific ambient temperature and application conditions may vary, please refer to the data sheet for details)
Domain and module applications：
Applications and module examples: 1. DC-DC converter: VS5812AI-VB plays a vital role in DC-DC converters, enabling efficient voltage conversion in battery-powered devices. Due to its low on-resistance, it can significantly reduce energy loss during power conversion and improve the overall efficiency of the power supply. Application scenarios include voltage regulation of solar panels, battery chargers, mobile power supplies, and server power supplies. 2. Battery Management System (BMS): Battery management systems need to ensure safe and efficient battery charging and discharging processes through efficient switch control. With its high current carrying capacity and low power loss, VS5812AI-VB can effectively control the battery charging and discharging current in the battery management system, extend the battery life and improve the system's operating efficiency. This MOSFET is widely used in battery management systems for electric vehicles, energy storage devices, and portable electronic devices.
3. **Power tools and power equipment drive systems**:
In power tools and power equipment (such as electric screwdrivers, electric drills, electric scrubbers, etc.), VS5812AI-VB provides efficient current control, which can drive motors and improve system efficiency. The low on-resistance characteristic helps to reduce heat generation, improve the performance and stability of the equipment, and has important applications, especially in battery-driven equipment.
4. **Industrial motor control**:
In the field of industrial automation, VS5812AI-VB, as the core component of the motor drive system, can be used in various motor control applications. Due to its high current carrying capacity and low on-resistance, it can efficiently switch the motor current and provide stable current output. It is widely used in automated production lines, robot control, electric actuator systems, etc.
5. **Power Management and Power Amplification Systems**:
In electronic devices that require high power management, such as high-power LED drivers and power amplifiers, the low RDS(ON) characteristics of the VS5812AI-VB ensure that power losses are minimized when current flows. This makes it excel in high-power applications and can effectively support audio equipment, industrial heaters, and other high-power electronic systems.
6. **Smart Power Supplies and Inverters**:
The VS5812AI-VB is suitable for use in smart power systems and inverters to effectively manage and regulate current flow. In photovoltaic inverters, battery energy storage inverters, and other power conversion devices, MOSFETs, with their efficient current switching capabilities, support stable power output while reducing energy losses during power conversion and improving the overall efficiency of the system.
7. **High-Frequency Switching Applications**:
Due to its low on-resistance, the VS5812AI-VB is suitable for high-frequency switching power supplies (such as RF power amplifiers, high-frequency transformers, and power conversion devices). In these applications, MOSFET can effectively switch signals and maintain high efficiency, and is widely used in communication equipment, radio frequency systems, and signal amplification modules.
In summary, VS5812AI-VB MOSFET has a wide range of applications in multiple high-efficiency power conversion, industrial drive, battery management, and high-power systems due to its excellent conduction characteristics and high current carrying capacity. Its low RDS(ON) characteristics make it an ideal choice for improving energy efficiency and reducing power loss, especially in power tools, electric vehicles, smart power supplies and other fields.
3. **Power tools and power equipment drive systems**:
In power tools and power equipment (such as electric screwdrivers, electric drills, electric scrubbers, etc.), VS5812AI-VB provides efficient current control, which can drive motors and improve system efficiency. The low on-resistance characteristic helps to reduce heat generation, improve the performance and stability of the equipment, and has important applications, especially in battery-driven equipment.
4. **Industrial motor control**:
In the field of industrial automation, VS5812AI-VB, as the core component of the motor drive system, can be used in various motor control applications. Due to its high current carrying capacity and low on-resistance, it can efficiently switch the motor current and provide stable current output. It is widely used in automated production lines, robot control, electric actuator systems, etc.
5. **Power Management and Power Amplification Systems**:
In electronic devices that require high power management, such as high-power LED drivers and power amplifiers, the low RDS(ON) characteristics of the VS5812AI-VB ensure that power losses are minimized when current flows. This makes it excel in high-power applications and can effectively support audio equipment, industrial heaters, and other high-power electronic systems.
6. **Smart Power Supplies and Inverters**:
The VS5812AI-VB is suitable for use in smart power systems and inverters to effectively manage and regulate current flow. In photovoltaic inverters, battery energy storage inverters, and other power conversion devices, MOSFETs, with their efficient current switching capabilities, support stable power output while reducing energy losses during power conversion and improving the overall efficiency of the system.
7. **High-Frequency Switching Applications**:
Due to its low on-resistance, the VS5812AI-VB is suitable for high-frequency switching power supplies (such as RF power amplifiers, high-frequency transformers, and power conversion devices). In these applications, MOSFET can effectively switch signals and maintain high efficiency, and is widely used in communication equipment, radio frequency systems, and signal amplification modules.
In summary, VS5812AI-VB MOSFET has a wide range of applications in multiple high-efficiency power conversion, industrial drive, battery management, and high-power systems due to its excellent conduction characteristics and high current carrying capacity. Its low RDS(ON) characteristics make it an ideal choice for improving energy efficiency and reducing power loss, especially in power tools, electric vehicles, smart power supplies and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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